Extremely low threshold current AlGaAs buried‐heterostructure quantum well lasers grown by liquid phase epitaxy

1990 ◽  
Vol 57 (27) ◽  
pp. 2873-2875 ◽  
Author(s):  
Zh. I. Alferov ◽  
V. M. Andreyev ◽  
A. Z. Mereutza ◽  
A. V. Syrbu ◽  
V. P. Yakovlev
Keyword(s):  
Liquid Phase ◽  
Quantum Well ◽  
Liquid Phase Epitaxy ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Buried Heterostructure ◽  
Low Threshold

Low threshold buried‐heterostructure quantum well lasers by excimer laser assisted disordering

1988 ◽  
Vol 53 (16) ◽  
pp. 1459-1461 ◽  
Author(s):  
J. E. Epler ◽  
R. L. Thornton ◽  
W. J. Mosby ◽  
T. L. Paoli
Keyword(s):  
Quantum Well ◽  
Excimer Laser ◽  
Quantum Well Lasers ◽  
Buried Heterostructure ◽  
Low Threshold

Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold current

1998 ◽  
Vol 83 (1) ◽  
pp. 8-14 ◽  
Author(s):  
G. W. Yang ◽  
J. Y. Xu ◽  
Z. T. Xu ◽  
J. M. Zhang ◽  
L. H. Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Theoretical Investigation ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Beam Divergence ◽  
Vertical Beam ◽  
Low Threshold

QUANTUM WELL LASERS AND THEIR APPLICATIONS

1996 ◽  
Vol 07 (03) ◽  
pp. 373-381
Author(s):  
LIANGHUI CHEN
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Mainland China ◽  
Optical Fiber Communication ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Material System ◽  
High Modulation ◽  
Low Threshold

Quantum well lasers have attracted a great deal of attention by their many advantages such as low threshold current density, excellent temperature feature, high modulation rate and wavelength adjustability etc. The investigation on quantum well laser in mainland China started in the early 80s. AlGaAs/GaAs QW laser diode and InGaAs/GaAs strained layer QW laser diode have been developed using MBE technology with extremely low threshold current and high T0. Now the growth technologies for QW structure have been expanded to MOCVD technology. Emission wavelengths, on longer wavelength sides have been expanded up to 1.3 µm and 1.55 µm with InGaAsP/InP material system for application in optical fiber communication. On shorter wavelength sides, the emission wavelength has been expanded to lower than 670 nm, for applications in optical information processing. The characteristics of these devices will be demonstrated in this paper. The QW-DFB LD and low-dimension quantum wire and quantum dot lasers are under investigation.

Low threshold current high-temperature operation of InGaAs/AlGaAs strained-quantum-well lasers

1992 ◽  
Vol 4 (11) ◽  
pp. 1189-1191 ◽  
Author(s):  
P.L. Derry ◽  
H.E. Hager ◽  
K.C. Chiu ◽  
D.J. Booher ◽  
E.C. Miao ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Low Threshold ◽  
Strained Quantum Well ◽  
High Temperature Operation

Low threshold quantum well AlGaAs-heterolasers fabricated by low temperature liquid phase epitaxy

1991 ◽  
Author(s):  
V. M. Andreev ◽  
A. B. Kazantsev ◽  
V. R. Larlonov ◽  
V. D. Rumyantsev ◽  
V. P. Khvostikov
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Quantum Well ◽  
Liquid Phase Epitaxy ◽  
Low Threshold ◽  
Temperature Liquid

Very low threshold buried heterostructure quantum well lasers by laser‐assisted disordering

1988 ◽  
Vol 52 (17) ◽  
pp. 1371-1373 ◽  
Author(s):  
J. E. Epler ◽  
R. L. Thornton ◽  
T. L. Paoli
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Buried Heterostructure ◽  
Low Threshold
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