High‐power, low‐threshold, single‐mode GaInAsP/InP laser by low‐temperature, single‐step liquid phase epitaxy

1984 ◽  
Vol 45 (4) ◽  
pp. 328-330 ◽  
Author(s):  
H. Horikawa ◽  
K. Imanaka ◽  
A. Matoba ◽  
Y. Kawai ◽  
M. Sakuta
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
High Power ◽  
Liquid Phase Epitaxy ◽  
Single Mode ◽  
Single Step ◽  
Low Threshold

Low threshold quantum well AlGaAs-heterolasers fabricated by low temperature liquid phase epitaxy

1991 ◽  
Author(s):  
V. M. Andreev ◽  
A. B. Kazantsev ◽  
V. R. Larlonov ◽  
V. D. Rumyantsev ◽  
V. P. Khvostikov
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Quantum Well ◽  
Liquid Phase Epitaxy ◽  
Low Threshold ◽  
Temperature Liquid

High-power low-threshold Ga0.88In0.12As0.10Sb0.90/ Al0.47Ga0.53As0.04Sb0.96 double heterostructure lasers grown by liquid phase epitaxy

1994 ◽  
Vol 30 (4) ◽  
pp. 312-314 ◽  
Author(s):  
P. Grunberg ◽  
A. Baranov ◽  
C. Fouillant ◽  
J.L. Lazzari ◽  
P. Grech ◽  
...  
Keyword(s):  
Liquid Phase ◽  
High Power ◽  
Liquid Phase Epitaxy ◽  
Double Heterostructure ◽  
Low Threshold

Low-temperature liquid-phase epitaxy of YBa2Cu3Oyfilms by the molten KOH method

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EJ13 ◽  
Author(s):  
Shuhei Funaki ◽  
Yasuji Yamada ◽  
Ryota Okunishi ◽  
Yugo Miyachi
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Liquid Phase Epitaxy ◽  
Temperature Liquid
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