Very low‐threshold separate‐confinement‐heterostructure lasers prepared by liquid phase epitaxy

1985 ◽  
Vol 58 (2) ◽  
pp. 1052-1053 ◽  
Author(s):  
S. Mukai ◽  
Y. Tsunekawa ◽  
Y. Takabe ◽  
H. Yajima
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Low Threshold

Low threshold quantum well AlGaAs-heterolasers fabricated by low temperature liquid phase epitaxy

1991 ◽  
Author(s):  
V. M. Andreev ◽  
A. B. Kazantsev ◽  
V. R. Larlonov ◽  
V. D. Rumyantsev ◽  
V. P. Khvostikov
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Quantum Well ◽  
Liquid Phase Epitaxy ◽  
Low Threshold ◽  
Temperature Liquid

Extremely low threshold current AlGaAs buried‐heterostructure quantum well lasers grown by liquid phase epitaxy

1990 ◽  
Vol 57 (27) ◽  
pp. 2873-2875 ◽  
Author(s):  
Zh. I. Alferov ◽  
V. M. Andreyev ◽  
A. Z. Mereutza ◽  
A. V. Syrbu ◽  
V. P. Yakovlev
Keyword(s):  
Liquid Phase ◽  
Quantum Well ◽  
Liquid Phase Epitaxy ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Buried Heterostructure ◽  
Low Threshold

Growth by liquid phase epitaxy and low-threshold laser oscillation at 2.012 μm of a Tm:YAG waveguide laser

1995 ◽  
Author(s):  
Corinne Borel ◽  
Armelle Rameix ◽  
Philippe Thony ◽  
Bernard Ferrand ◽  
David P. Shepherd ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Laser Oscillation ◽  
Waveguide Laser ◽  
Low Threshold

High‐power, low‐threshold, single‐mode GaInAsP/InP laser by low‐temperature, single‐step liquid phase epitaxy

1984 ◽  
Vol 45 (4) ◽  
pp. 328-330 ◽  
Author(s):  
H. Horikawa ◽  
K. Imanaka ◽  
A. Matoba ◽  
Y. Kawai ◽  
M. Sakuta
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
High Power ◽  
Liquid Phase Epitaxy ◽  
Single Mode ◽  
Single Step ◽  
Low Threshold

High-power low-threshold Ga0.88In0.12As0.10Sb0.90/ Al0.47Ga0.53As0.04Sb0.96 double heterostructure lasers grown by liquid phase epitaxy

1994 ◽  
Vol 30 (4) ◽  
pp. 312-314 ◽  
Author(s):  
P. Grunberg ◽  
A. Baranov ◽  
C. Fouillant ◽  
J.L. Lazzari ◽  
P. Grech ◽  
...  
Keyword(s):  
Liquid Phase ◽  
High Power ◽  
Liquid Phase Epitaxy ◽  
Double Heterostructure ◽  
Low Threshold

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

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