Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular‐beam epitaxy

1988 ◽  
Vol 63 (10) ◽  
pp. 5115-5120 ◽  
Author(s):  
D. C. Radulescu ◽  
G. W. Wicks ◽  
W. J. Schaff ◽  
A. R. Calawa ◽  
L. F. Eastman
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Impurity Incorporation ◽  
Influence Of Substrate

The Influence of Substrate Polarity on the Blue Emission from As-doped GaN Layers Grown by Molecular Beam Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
S. V. Novikov ◽  
L. X. Zhao ◽  
C. T. Foxon ◽  
I. Harrison ◽  
R. P. Campion ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Blue Emission ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Sample Orientation ◽  
Metal Organic ◽  
Organic Vapour ◽  
Strong Blue Emission ◽  
Influence Of Substrate

ABSTRACTThe influence of sample orientation and polarity on the blue emission from As-doped GaN layers grown by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated. Arsenic doped GaN layers were grown under identical PA-MBE conditions on several types of substrates including c-plane (0001) sapphire and polar and non-polar GaN templates grown by metal-organic vapour phase epitaxy (MOVPE). Non-polar GaN MOVPE templates were grown on aplane (11–20) sapphire and LiAlO2 (100). The orientation and polarity have a strong influence on the morphology and the optical properties of As-doped GaN layers. Strong blue emission from As-doped GaN was observed only in the case of (000–1) oriented N-polarity layers.

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