scholarly journals Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy

1998 ◽  
Vol 84 (12) ◽  
pp. 6680-6685 ◽  
Author(s):  
Wook Kim ◽  
A. E. Botchkarev ◽  
H. Morkoç ◽  
Z.-Q. Fang ◽  
D. C. Look ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Flow Rate ◽  
Material Properties ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Impurity Incorporation ◽  
Si Doped

Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy

2006 ◽  
Vol 955 ◽  
Author(s):  
Mo Ahoujja ◽  
S Elhamri ◽  
M Hogsed ◽  
Y. K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Unknown Origin ◽  
Shallow Donor ◽  
Related Point ◽  
Line Defects ◽  
Si Doped ◽  
Transient Spectroscopy

ABSTRACTDeep levels in Si doped AlxGa1−xN samples, with Al mole fraction in the range of x = 0 to 0.30, grown by radio-frequency plasma activated molecular beam epitaxy on sapphire substrates were characterized by deep level transient spectroscopy (DLTS). DLTS measurements show two significant electron traps, P1 and P2, in AlGaN at all aluminum mole fractions. The electron trap, P2, appears to be a superposition of traps A and B , both of which are observed in GaN grown by various growth techniques and are thought to be related to VGa-shallow donor complexes. Trap P1 is related to line defects and N-related point defects. Both of these traps are distributed throughout the bulk of the epitaxial layer. An additional trap P0 which was observed in Al0.20Ga0.80N and Al0.30Ga0.70N is of unknown origin, but like P1 and P2, it exhibits dislocation-related capture kinetics. The activation energy measured from the conduction band of the defects is found to increase with Al mole content, a behavior consistent with other III-V semiconductors.

Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy

1997 ◽  
Vol 12 (7) ◽  
pp. 917-920 ◽  
Author(s):  
T S Cheng ◽  
C T Foxon ◽  
G B Ren ◽  
J W Orton ◽  
Yu V Melnik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Substrate Type

scholarly journals Fabrication of As-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy

2020 ◽  
Vol 59 (SF) ◽  
pp. SFFA01
Author(s):  
Sho Aonuki ◽  
Yudai Yamashita ◽  
Kaoru Toko ◽  
Takashi Suemasu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films

Epitaxial τMnAl/AlAs/GaAs Heterostructures with Perpendicular Magnetization

1991 ◽  
Vol 231 ◽  
Author(s):  
T. Sands ◽  
J.P. Harbison ◽  
S.J. Allen ◽  
M.L Leadbeater ◽  
T.L Cheeks ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Subsequent Annealing ◽  
Perpendicular Magnetization ◽  
Gaas Substrates ◽  
Extraordinary Hall Effect ◽  
Hysteretic Characteristics

AbstractEpitaxial films of ferromagnetic τMnAl with perpendicular magnetization have been grown on {100}AlAs/GaAs substrates by molecular beam epitaxy. A multistep growth procedure involving the formation of a template followed by codeposition and subsequent annealing yields thin epitaxial τMnA1 films that exhibit the extraordinary Hall effect with nearly ideal hysteretic characteristics.

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