Influence of Substrate Temperature on the Morphology of Al x Ga1 − x As Grown by Molecular Beam Epitaxy

1982 ◽  
Vol 129 (4) ◽  
pp. 824-826 ◽  
Author(s):  
H. Morkoç ◽  
T. J. Drummond ◽  
W. Kopp ◽  
R. Fischer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Influence Of Substrate

Influence of substrate temperature on incorporation of magnesium into Zn1-xMgxO layers growth by molecular beam epitaxy

2018 ◽  
Vol 766 ◽  
pp. 398-401
Author(s):  
D. Jarosz ◽  
H. Teisseyre ◽  
M. Stachowicz ◽  
A. Pieniążek ◽  
S. Kret ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Influence Of Substrate

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate

2001 ◽  
Vol 227-228 ◽  
pp. 266-270 ◽  
Author(s):  
Yasuaki Tatsuoka ◽  
Masaya Uemura ◽  
Takahiro Kitada ◽  
Satoshi Shimomura ◽  
Satoshi Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Surface Migration
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