scholarly journals Determination of Majority Carrier Capture Rates via Deep Level Transient Spectroscopy

2015 ◽  
Vol 5 (4) ◽  
pp. P3041-P3047
Author(s):  
J. Lauwaert ◽  
S. Khelifi ◽  
H. Vrielinck
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Carrier Capture ◽  
Majority Carrier ◽  
Transient Spectroscopy ◽  
Capture Rates

Bistable Defects Induced in GaAs by H2 Plasma Process

1989 ◽  
Vol 146 ◽  
Author(s):  
X. Boddaert ◽  
D. Vuillaume ◽  
D. Stievenard ◽  
J.C. Bourgoin ◽  
P. Boher
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Plasma Process ◽  
Stable States ◽  
Native Defects ◽  
Complete Determination ◽  
Lec Gaas ◽  
Transient Spectroscopy ◽  
Configuration Coordinate

ABSTRACTWe have studied the effect of an H2 plasma (150 W; 150°C; 10, 20, 50, 100 s) on unannealed and annealed (850°C, AsH3 atmosphere) LEC GaAs material. Using Deep Level Transient Spectroscopy, we have shown that the plasma induces a main bistable defect DO, which has two possible stable states Dl and D2. A complete determination of the corresponding Configuration Coordinate Diagram has been done. Finally, no correlation has been obtained between DO and the native defects EL6, EL3 and EL2. No passivation of the EL2 defect has been observed and the evolution of the D0 concentration results from the association of hydrogen with AsGa. These observations are in disagreement with the identification of EL2 with an isolated AsGa.

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 1297-1300 ◽  
Author(s):  
Yutaka Tokuda ◽  
Youichi Matsuoka ◽  
Hiroyuki Ueda ◽  
Osamu Ishiguro ◽  
Narumasa Soejima ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Electron Traps ◽  
Majority Carrier ◽  
Sapphire Substrates ◽  
Carrier Traps ◽  
Pn Junctions ◽  
Transient Spectroscopy

Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, MI3) were detected by deep-level transient spectroscopy. MA1 and MA2 are electron traps commonly observed in n GaN on n+ GaN and sapphire substrates. No dislocation-related traps were observed in n GaN on n+ GaN. Among five traps in GaN pn on GaN, MI3 is the main trap with the concentration of 2.5x1015 cm-3.

Determination of the X conduction‐subband energies in type II GaAs/AlAs/GaAs quantum well by deep level transient spectroscopy

1995 ◽  
Vol 67 (24) ◽  
pp. 3593-3595 ◽  
Author(s):  
Qin‐Sheng Zhu ◽  
Zong‐Quan Gu ◽  
Zhan‐Tian Zhong ◽  
Zeng‐Qi Zhou ◽  
Li‐Wu Lu
Keyword(s):  
Quantum Well ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Type Ii ◽  
Transient Spectroscopy
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