Accurate measurement of capture cross sections in deep level transient spectroscopy: Application to EL2 in GaAs

1995 ◽  
Vol 24 (10) ◽  
pp. 1461-1464 ◽  
Author(s):  
D. C. Look ◽  
Z. -Q. Fang ◽  
J. R. Sizelove
Keyword(s):  
Cross Sections ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capture Cross ◽  
Transient Spectroscopy ◽  
Capture Cross Sections

Meyer-Neldel Rule in Deep-Level-Transient-Spectroscopy and its Ramifications

2003 ◽  
Vol 763 ◽  
Author(s):  
Richard S. Crandall
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capture Cross ◽  
Emission Data ◽  
The Cross ◽  
Transient Spectroscopy ◽  
Capture Cross Sections

AbstractThis paper presents data showing a Meyer-Neldel rule (MNR) in InGaAsN alloys. It is shown that without this knowledge, significant errors will be made using Deep-Level Transient-Spectroscopy (DLTS) emission data to determine capture cross sections. By correctly accounting for the MNR in analyzing the DLTS data the correct value of the cross section is obtained.

Determination of Traps in Poly(p-phenylene vinylene) Light Emitting Diodes by Chargebased Deep Level Transient Spectroscopy

2002 ◽  
Vol 725 ◽  
Author(s):  
Olivier Gaudin ◽  
Richard B. Jackman ◽  
Thien-Phap Nguyen ◽  
Philippe Le Rendu
Keyword(s):  
Cross Sections ◽  
Minority Carrier ◽  
Deep Level ◽  
Activation Energies ◽  
Phenylene Vinylene ◽  
Capture Cross ◽  
Light Emitting ◽  
Transient Spectroscopy ◽  
Capture Cross Sections

AbstractCharge-based deep level transient spectroscopy (Q-DLTS) has been used to study the defect states that exist within poly(p-phenylene vinylene) (PPV), a semiconducting polymer with a band gap of about 2.4 eV. The technique allows the determination of activation energies, capture cross-sections and trap concentrations. In some circumstances, it is also possible to distinguish between minority and majority carrier traps. The structures investigated here consisted of ITO/PPV/MgAg light emitting diode (LED) devices. Two types of trapping centres were found. The first type has activation energies in the range 0.49 – 0.53 eV and capture cross-sections of the order of 10-16 – 10-18 cm2. It shows a Poole-Frenkel, field assisted-emission process. This level has been identified as a bulk acceptor-like majority carrier (i.e., hole) trap. The second type has activation energies in the range 0.40 – 0.42 eV and capture cross-sections of the order of 10-19 cm2. This level has been identified as a minority carrier (i.e., electron) trap. This second trap type is therefore expected to limit minority carrier injection into the PPV layer within the LED, and hence reduce electroluminescence under forward bias conditions.

Proton Irradiation Damage in Zn and Cd Doped InP

1993 ◽  
Vol 325 ◽  
Author(s):  
George C. Rybicki ◽  
Wendell S. Williams
Keyword(s):  
Cross Sections ◽  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Irradiation Damage ◽  
Radiation Induced ◽  
Diffusion Rates ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Capture Cross Sections

AbstractDeep Level Transient Spectroscopy (DLTS) was used to study the defects introduced in Zn and Cd doped Schottky barrier diodes by 2 MeV proton irradiation. The defects H3, H4 and H5 were observed in lightly Zn doped InP, while only the defects H3 and H5 were observed in more heavily Zn doped and Cd doped InP. The defect activation energies and capture cross sections did not vary between the Zn and Cd doped InP.The concentration of the radiation induced defects was also measured. The introduction rate of the defect H4 in the lightly Zn doped InP and the introduction rate of the defect H3 in the heavily Zn and Cd doped InP were about equal, but the introduction rate of the defect H5 varied strongly among the three types of material. The introduction rate of H5 was highest in the heavily Zn doped InP but the lowest in the heavily Cd doped InP, even though they were doped comparably. As a result, the total defect introduction rate was lowest in the highly Cd doped InP.The results can be interpreted in terms of the models for the formation and annealing of defects, and by the different diffusion rates of Zn and Cd in InP.

Effect of Sacrificial AlN (Aluminum Nitride) Layer on the Deep Surface States of 4H-SiC

2021 ◽  
Vol 21 (3) ◽  
pp. 1904-1908
Author(s):  
Woo-Young Son ◽  
Jeong Hyun Moon ◽  
Wook Bahng ◽  
Sang-Mo Koo
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Surface States ◽  
Nitride Layer ◽  
Double Negative ◽  
Capture Cross ◽  
Trap Energy ◽  
Transient Spectroscopy

We investigated the effect of a sacrificial AlN layer on the deep energy level states of 4H-SiC surface. The samples with and without AlN layer have been annealed at 1300 °C for 30 minutes duration using a tube furnace. After annealing the samples, the changes of the carbon vacancy (VC) related Z1/2 defect characteristics were analyzed by deep level transient spectroscopy. The trap energy associated with double negative acceptor (VC(2-/0)) appears at ˜0.7 eV and was reduced from ˜0.687 to ˜0.582 eV in the sacrificial AlN layer samples. In addition, the capture cross section was significantly improved from ˜2.1×10-14 to ˜3.8×10−16 cm−2 and the trap concentration was reduced by approximately 40 times.

DLTS Study on Al+ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes

2017 ◽  
Vol 897 ◽  
pp. 279-282 ◽  
Author(s):  
Hussein M. Ayedh ◽  
Maurizio Puzzanghera ◽  
Bengt Gunnar Svensson ◽  
Roberta Nipoti
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Electron Trap ◽  
Double Negative ◽  
Capture Cross ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
Post Implantation

A vertical 4H-SiC p-i-n diode with 2×1020cm-3 Al+ implanted emitter and 1950°C/5min post implantation annealing has been characterized by deep level transient spectroscopy (DLTS). Majority (electron) and minority (hole) carrier traps have been found. Electron traps with a homogeneous depth profile, are positioned at 0.16, 0.67 and 1.5 eV below the minimum edge of the conduction band, and have 3×10-15, 1.7×1014, and 1.8×10-14 cm2 capture cross section, respectively. A hole trap decreasing in intensity with decreasing pulse voltage occurs at 0.35 eV above the maximum edge of the valence band with 1×1013 cm2 apparent capture cross section. The highest density is observed for the refractory 0.67 eV electron trap that is due to the double negative acceptor states of the carbon vacancy.

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

2010 ◽  
Vol 645-648 ◽  
pp. 499-502 ◽  
Author(s):  
Alberto F. Basile ◽  
John Rozen ◽  
X.D. Chen ◽  
Sarit Dhar ◽  
John R. Williams ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Capture Cross ◽  
Temperature Dependent ◽  
Band Energy ◽  
Transient Spectroscopy ◽  
Semiconductor Traps

The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.

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