Surface‐energy‐driven grain growth during rapid thermal annealing (<10 s) of thin silicon films

1987 ◽  
Vol 61 (4) ◽  
pp. 1652-1655 ◽  
Author(s):  
S. M. Garrison ◽  
R. C. Cammarata ◽  
C. V. Thompson ◽  
Henry I. Smith
Keyword(s):  
Surface Energy ◽  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Films ◽  
Thin Silicon

Formation and Morphology Evolution of Nickel Germanides on Ge (100) under Rapid Thermal Annealing

2004 ◽  
Vol 810 ◽  
Author(s):  
K.Y. Lee ◽  
S.L. Liew ◽  
S.J. Chua ◽  
D.Z. Chi ◽  
H.P. Sun ◽  
...  
Keyword(s):  
Grain Growth ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Microstructure Evolution ◽  
Interfacial Microstructure ◽  
Morphology Evolution ◽  
Smooth Interface ◽  
Substrate Side ◽  
Nickel Germanides

ABSTRACTPhase formation and interfacial microstructure evolution of nickel germanides formed by rapid thermal annealing in a 15-nm Ni/Ge (100) system have been studied. Coexistence of a NiGe layer and Ni-rich germanide particles was detected at 250°C. Highly textured NiGe film with a smooth interface with Ge was observed. Annealing at higher temperatures resulted in grain growth and severe grooving of the NiGe film at the substrate side, followed by serious agglomeration above 500°C. Fairly low sheet resistance was achieved in 250-500°C where the NiGe film continuity was uninterrupted.

Microstructure of Poly-Si Obtained by Rapid Thermal Annealing of Amorphous Silicon Films

1994 ◽  
Vol 37-38 ◽  
pp. 287-292 ◽  
Author(s):  
J. Stoemenos ◽  
N.A. Economou ◽  
L. Haji ◽  
M. Bonnel ◽  
N. Duhamel ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Films

Thin-Film Transistors with Polycrystalline Silicon Films Prepared by Two-Step Rapid Thermal Annealing

2000 ◽  
Vol 39 (Part 2, No. 1A/B) ◽  
pp. L19-L21 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Chun-Yao Huang ◽  
Fang-Shing Wang ◽  
Kuen-Hsien Lin ◽  
Fu-Gow Tarntair
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Change of surface structure of thin silicon nitride layers during electron beam rapid thermal annealing

1994 ◽  
Vol 64 (20) ◽  
pp. 2652-2654 ◽  
Author(s):  
A. Markwitz ◽  
H. Baumann ◽  
E. F. Krimmel ◽  
K. Bethge ◽  
W. Grill
Keyword(s):  
Electron Beam ◽  
Silicon Nitride ◽  
Surface Structure ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Silicon ◽  
Nitride Layers
Sign in / Sign up

Export Citation Format

Share Document