Role of negatively charged vacancies in secondary grain growth in polycrystalline silicon during rapid thermal annealing

1991 ◽  
Vol 58 (21) ◽  
pp. 2414-2416 ◽  
Author(s):  
Keunhyung Park ◽  
Shubneesh Batra ◽  
Sanjay Banerjee
Keyword(s):  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon

Polycrystalline Silicon Emitter Contacts Formed by Rapid Thermal Annealing

1989 ◽  
Vol 136 (1) ◽  
pp. 215-224 ◽  
Author(s):  
M. Delfino ◽  
J. G. de Groot ◽  
K. N. Ritz ◽  
P. Maillot
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

Formation and Morphology Evolution of Nickel Germanides on Ge (100) under Rapid Thermal Annealing

2004 ◽  
Vol 810 ◽  
Author(s):  
K.Y. Lee ◽  
S.L. Liew ◽  
S.J. Chua ◽  
D.Z. Chi ◽  
H.P. Sun ◽  
...  
Keyword(s):  
Grain Growth ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Microstructure Evolution ◽  
Interfacial Microstructure ◽  
Morphology Evolution ◽  
Smooth Interface ◽  
Substrate Side ◽  
Nickel Germanides

ABSTRACTPhase formation and interfacial microstructure evolution of nickel germanides formed by rapid thermal annealing in a 15-nm Ni/Ge (100) system have been studied. Coexistence of a NiGe layer and Ni-rich germanide particles was detected at 250°C. Highly textured NiGe film with a smooth interface with Ge was observed. Annealing at higher temperatures resulted in grain growth and severe grooving of the NiGe film at the substrate side, followed by serious agglomeration above 500°C. Fairly low sheet resistance was achieved in 250-500°C where the NiGe film continuity was uninterrupted.

Rapid Thermal Annealing of Neutron Transmutation Toped Czochralski Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
G. M. Berezina ◽  
F. P. Kdrshunov ◽  
N. A. Sobolev ◽  
A. V. Voevodova ◽  
A. A. Stuk
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Neutron Irradiation ◽  
Irradiation Temperature ◽  
Electrical Parameters ◽  
Furnace Annealing ◽  
Annealing Behaviour ◽  
Czochralski Silicon ◽  
Neutron Transmutation

ABSTRACTThe influence of the rapid thermal annealing (RTA) in comparison with that of the standard furnace annealing (FA) on the electrical parameters and photoluminescence (PL) of Czochralski silicon (Cz Si) subjected to neutron irradiation at various temperatures has been studied. The role of the irradiation temperature on the annealing behaviour of electrical parameters in Cz Si has been established. The possibility of getting neutron transmutation doped (NTD) Cz Si having the calculated resistivity by means of the RTA is shown.

Formation of Silicides by Rapid Thermal Annealing Over Polycrystalline Silicon

1985 ◽  
Vol 54 ◽  
Author(s):  
J. Narayan ◽  
T. A. Stephenson ◽  
T. Brat ◽  
D. Fathy ◽  
S. J. Pennycook
Keyword(s):  
Titanium Oxide ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Annealing Treatment ◽  
External Layer ◽  
Rich Mixture ◽  
Thermal Annealing Treatment ◽  
Rapid Thermal Annealing Treatment

ABSTRACTThe formation of titanium suicide over polycrystalline silicon has been investigated after rapid thermal annealing treatment in nitrogen and argon ambients. After rapid thermal annealing 300 Å thick titanium overlayer at 900°C for 10 seconds, the sheet resistance of about 3 Ω/□ was achieved, which decreased to 2 Ω/□ after 1100°C / 10s treatment. The TiSi2 Phase was found to be stable after RTA treatments up to 1100°C /10s with no or negligible migration of titanium along the grain boundaries in polycrystalline silicon. In the nitrogen ambient, an external layer (titanium rich, mixture of titanium oxide and nitride) was observed to form after the RTA treatment, but the surface was found clean in the argon ambient.

Influence of Rapid Thermal Annealing on Recombination Properties of Polycrystalline Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Kittler ◽  
W. Seifert
Keyword(s):  
Beneficial Effect ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

ABSTRACTRapid thermal annealing was shown by EBIC to increase the minority-carrier diffusion length in cast polycrystalline silicon. The beneficial effect is due to a deactivation of intragrain defects (mainly dislocations) and is stable against post-RTA annealing up to at least 600 °C/ 10 min.

Silicides and Rapid Thermal Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
F. M. d'Heurle ◽  
R. T. Hodgson ◽  
C. Y. Ting
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Point Of View ◽  
Theoretical Point

ABSTRACTIn the first part of this paper the role of rapid thermal annealing in sulicide processing is viewed from a theoretical point of view with respect to what is known about metal-silicon reactions. The second part is a brief survey of the quickly expanding literature on the rapid thermal annealing of silicides. Whereas RTA does not appear to solve all, or perhaps even any, of the problems encountered in the use of silicides, it is concluded that RTA presents a number of definite advantages.

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