Characterization of metal‐oxide‐semiconductor transistors with very thin gate oxide

K. K. Hung; Y. C. Cheng

doi:10.1063/1.336604

Characterization of metal‐oxide‐semiconductor transistors with very thin gate oxide

Journal of Applied Physics ◽

10.1063/1.336604 ◽

1986 ◽

Vol 59 (3) ◽

pp. 816-823 ◽

Cited By ~ 16

Author(s):

K. K. Hung ◽

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Gate Oxide

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Quantitative Study of Charge‐to‐Breakdown of Thin Gate Oxide for a p+‐Poly‐Si Metal Oxide Semiconductor Capacitor

Journal of The Electrochemical Society ◽

10.1149/1.1837471 ◽

1997 ◽

Vol 144 (2) ◽

pp. 698-704

Author(s):

Li‐shuenn Wang ◽

Mou‐shiung Lin

Keyword(s):

Metal Oxide ◽

Quantitative Study ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Gate Oxide ◽

Metal Oxide Semiconductor Capacitor

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Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc[sub 2]O[sub 3] as the Gate Oxide

Electrochemical and Solid-State Letters ◽

10.1149/1.1479298 ◽

2002 ◽

Vol 5 (7) ◽

pp. G51 ◽

Cited By ~ 29

Author(s):

R. Mehandru ◽

B. P. Gila ◽

J. Kim ◽

J. W. Johnson ◽

K. P. Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Diode

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Study of defects induced by high‐electric‐field stress into a thin gate oxide (11 nm) of metal‐oxide‐semiconductor capacitors

Journal of Applied Physics ◽

10.1063/1.354937 ◽

1993 ◽

Vol 74 (2) ◽

pp. 1124-1130 ◽

Cited By ~ 26

Author(s):

Abdelillah El‐Hdiy ◽

Guy Salace ◽

Christian Petit ◽

Marc Jourdain ◽

Dominique Vuillaume

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

High Electric Field ◽

Oxide Semiconductor ◽

Field Stress ◽

Thin Gate Oxide

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The fabrication and characterization of metal-oxide-semiconductor field effect transistors and gated diodes using Ta/sub 2/O/sub 5/ gate oxide

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) ◽

10.1109/sim.2000.939260 ◽

2002 ◽

Author(s):

Jing-Chi Yu ◽

B.C. Lai ◽

J.Y. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1379786 ◽

2001 ◽

Vol 78 (25) ◽

pp. 4034-4036 ◽

Cited By ~ 13

Author(s):

Y. T. Hou ◽

M. F. Li ◽

W. H. Lai ◽

Y. Jin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling ◽

Hole Current

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Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide

Journal of The Electrochemical Society ◽

10.1149/1.1489689 ◽

2002 ◽

Vol 149 (8) ◽

pp. G482 ◽

Cited By ~ 56

Author(s):

J. Kim ◽

B. Gila ◽

R. Mehandru ◽

J. W. Johnson ◽

J. H. Shin ◽

...

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Investigation of surface mobility in thin‐gate oxide metal‐oxide‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.335559 ◽

1985 ◽

Vol 58 (11) ◽

pp. 4245-4250

Author(s):

T. W. Chan ◽

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Surface Mobility ◽

Thin Gate Oxide

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Positive charge and interface state generation in a thin gate oxide (30 nm) metal‐oxide‐semiconductor capacitor

Journal of Applied Physics ◽

10.1063/1.356396 ◽

1994 ◽

Vol 75 (3) ◽

pp. 1592-1598 ◽

Cited By ~ 8

Author(s):

Abdelillah El‐Hdiy

Keyword(s):

Metal Oxide ◽

Positive Charge ◽

Gate Oxide ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation ◽

Thin Gate Oxide ◽

Metal Oxide Semiconductor Capacitor

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Erratum: “Quantitative Study of Charge‐to‐Breakdown of Thin Gate Oxide for a p+‐Poly‐Si Metal Oxide Semiconductor Capacitor,” [J. Electrochem. Soc., 144, 698 (1997)]

Journal of The Electrochemical Society ◽

10.1149/1.1837698 ◽

1997 ◽

Vol 144 (5) ◽

pp. 1890-1890

Author(s):

Li‐shuenn Wang ◽

Fonshan Huang ◽

Mou‐shiung Lin

Keyword(s):

Metal Oxide ◽

Quantitative Study ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Gate Oxide ◽

Metal Oxide Semiconductor Capacitor

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A Novel Thin Gate-Oxide-Thickness Measurement Method by LDD (Lightly-Doped-Drain)- NMOS (N-Channel Metal-Oxide-Semiconductor) Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l1 ◽

1998 ◽

Vol 37 (Part 2, No. 1A/B) ◽

pp. L1-L3

Author(s):

Jiaw-Ren Shih ◽

Jian-Hsing Lee ◽

B. K. Liew ◽

Huey-Liang Hwang

Keyword(s):

Metal Oxide ◽

Measurement Method ◽

Gate Oxide ◽

Oxide Thickness ◽

Thickness Measurement ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxide Thickness ◽

Thin Gate Oxide ◽

Lightly Doped Drain

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