Positive charge and interface state generation in a thin gate oxide (30 nm) metal‐oxide‐semiconductor capacitor

Abdelillah El‐Hdiy

doi:10.1063/1.356396

Positive charge and interface state generation in a thin gate oxide (30 nm) metal‐oxide‐semiconductor capacitor

Journal of Applied Physics ◽

10.1063/1.356396 ◽

1994 ◽

Vol 75 (3) ◽

pp. 1592-1598 ◽

Cited By ~ 8

Author(s):

Abdelillah El‐Hdiy

Keyword(s):

Metal Oxide ◽

Positive Charge ◽

Gate Oxide ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation ◽

Thin Gate Oxide ◽

Metal Oxide Semiconductor Capacitor

Download Full-text

Quantitative Study of Charge‐to‐Breakdown of Thin Gate Oxide for a p+‐Poly‐Si Metal Oxide Semiconductor Capacitor

Journal of The Electrochemical Society ◽

10.1149/1.1837471 ◽

1997 ◽

Vol 144 (2) ◽

pp. 698-704

Author(s):

Li‐shuenn Wang ◽

Mou‐shiung Lin

Keyword(s):

Metal Oxide ◽

Quantitative Study ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Gate Oxide ◽

Metal Oxide Semiconductor Capacitor

Download Full-text

Erratum: “Quantitative Study of Charge‐to‐Breakdown of Thin Gate Oxide for a p+‐Poly‐Si Metal Oxide Semiconductor Capacitor,” [J. Electrochem. Soc., 144, 698 (1997)]

Journal of The Electrochemical Society ◽

10.1149/1.1837698 ◽

1997 ◽

Vol 144 (5) ◽

pp. 1890-1890

Author(s):

Li‐shuenn Wang ◽

Fonshan Huang ◽

Mou‐shiung Lin

Keyword(s):

Metal Oxide ◽

Quantitative Study ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Gate Oxide ◽

Metal Oxide Semiconductor Capacitor

Download Full-text

Extra interface state generation enhanced by fluorine in tungsten‐polycided metal‐oxide‐semiconductor devices with nitrided oxide gate dielectric

Applied Physics Letters ◽

10.1063/1.114493 ◽

1995 ◽

Vol 67 (10) ◽

pp. 1456-1458 ◽

Cited By ~ 1

Author(s):

C. W. Chen ◽

Y. K. Fang ◽

G. Y. Lee ◽

J. C. Hsieh ◽

M. S. Liang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation

Download Full-text

Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2762291 ◽

2007 ◽

Vol 91 (4) ◽

pp. 042904 ◽

Cited By ~ 28

Author(s):

Hyoung-Sub Kim ◽

Injo Ok ◽

Manhong Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Scaling Down ◽

Metal Oxide Semiconductor Capacitor

Download Full-text

Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress

Applied Physics Letters ◽

10.1063/1.102819 ◽

1990 ◽

Vol 56 (3) ◽

pp. 250-252 ◽

Cited By ~ 8

Author(s):

G. Q. Lo ◽

W. C. Ting ◽

D. K. Shih ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress ◽

State Generation

Download Full-text

Study of defects induced by high‐electric‐field stress into a thin gate oxide (11 nm) of metal‐oxide‐semiconductor capacitors

Journal of Applied Physics ◽

10.1063/1.354937 ◽

1993 ◽

Vol 74 (2) ◽

pp. 1124-1130 ◽

Cited By ~ 26

Author(s):

Abdelillah El‐Hdiy ◽

Guy Salace ◽

Christian Petit ◽

Marc Jourdain ◽

Dominique Vuillaume

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

High Electric Field ◽

Oxide Semiconductor ◽

Field Stress ◽

Thin Gate Oxide

Download Full-text

Interface State Generation in p-Type Si Metal/ Oxide/ Semiconductor Capacitors due to Fowler-Nordheim Tunneling Current Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l1315 ◽

1995 ◽

Vol 34 (Part 2, No. 10B) ◽

pp. L1315-L1317 ◽

Cited By ~ 2

Author(s):

Masao Inoue ◽

Junji Shirafuji

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Stress ◽

State Generation ◽

P Type ◽

Nordheim Tunneling

Download Full-text

Charge trapping and interface state generation in metal‐oxide‐semiconductor capacitors due to Fowler–Nordheim tunneling injection at low temperatures

Journal of Applied Physics ◽

10.1063/1.345082 ◽

1990 ◽

Vol 67 (11) ◽

pp. 6903-6907 ◽

Cited By ~ 13

Author(s):

M. Sakashita ◽

S. Zaima ◽

Y. Yasuda

Keyword(s):

Metal Oxide ◽

Low Temperatures ◽

Charge Trapping ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation ◽

Tunneling Injection ◽

Nordheim Tunneling

Download Full-text

Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide/Semiconductor Capacitors

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.5921 ◽

1996 ◽

Vol 35 (Part 1, No. 12A) ◽

pp. 5921-5924 ◽

Cited By ~ 3

Author(s):

Masao Inoue ◽

Akihiro Shimada ◽

Junji Shirafuji

Keyword(s):

Metal Oxide ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Efficiency ◽

State Generation

Download Full-text

Textured Magnesium Titanate as Gate Oxide for GaN-Based Metal-Oxide-Semiconductor Capacitor

Journal of the American Ceramic Society ◽

10.1111/j.1551-2916.2011.04439.x ◽

2011 ◽

Vol 94 (4) ◽

pp. 1005-1007 ◽

Cited By ~ 11

Author(s):

Chu-Yun Hsiao ◽

Chuan-Feng Shih ◽

Chih-Hua Chien ◽

Cheng-Liang Huang

Keyword(s):

Metal Oxide ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Magnesium Titanate ◽

Metal Oxide Semiconductor Capacitor

Download Full-text