Erratum: “Quantitative Study of Charge‐to‐Breakdown of Thin Gate Oxide for a p+‐Poly‐Si Metal Oxide Semiconductor Capacitor,” [J. Electrochem. Soc., 144, 698 (1997)]

Li‐shuenn Wang; Fonshan Huang; Mou‐shiung Lin

doi:10.1149/1.1837698

Erratum: “Quantitative Study of Charge‐to‐Breakdown of Thin Gate Oxide for a p+‐Poly‐Si Metal Oxide Semiconductor Capacitor,” [J. Electrochem. Soc., 144, 698 (1997)]

Journal of The Electrochemical Society ◽

10.1149/1.1837698 ◽

1997 ◽

Vol 144 (5) ◽

pp. 1890-1890

Author(s):

Li‐shuenn Wang ◽

Fonshan Huang ◽

Mou‐shiung Lin

Keyword(s):

Metal Oxide ◽

Quantitative Study ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Gate Oxide ◽

Metal Oxide Semiconductor Capacitor

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Quantitative Study of Charge‐to‐Breakdown of Thin Gate Oxide for a p+‐Poly‐Si Metal Oxide Semiconductor Capacitor

Journal of The Electrochemical Society ◽

10.1149/1.1837471 ◽

1997 ◽

Vol 144 (2) ◽

pp. 698-704

Author(s):

Li‐shuenn Wang ◽

Mou‐shiung Lin

Keyword(s):

Metal Oxide ◽

Quantitative Study ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Gate Oxide ◽

Metal Oxide Semiconductor Capacitor

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Positive charge and interface state generation in a thin gate oxide (30 nm) metal‐oxide‐semiconductor capacitor

Journal of Applied Physics ◽

10.1063/1.356396 ◽

1994 ◽

Vol 75 (3) ◽

pp. 1592-1598 ◽

Cited By ~ 8

Author(s):

Abdelillah El‐Hdiy

Keyword(s):

Metal Oxide ◽

Positive Charge ◽

Gate Oxide ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation ◽

Thin Gate Oxide ◽

Metal Oxide Semiconductor Capacitor

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Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2762291 ◽

2007 ◽

Vol 91 (4) ◽

pp. 042904 ◽

Cited By ~ 28

Author(s):

Hyoung-Sub Kim ◽

Injo Ok ◽

Manhong Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Scaling Down ◽

Metal Oxide Semiconductor Capacitor

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Study of defects induced by high‐electric‐field stress into a thin gate oxide (11 nm) of metal‐oxide‐semiconductor capacitors

Journal of Applied Physics ◽

10.1063/1.354937 ◽

1993 ◽

Vol 74 (2) ◽

pp. 1124-1130 ◽

Cited By ~ 26

Author(s):

Abdelillah El‐Hdiy ◽

Guy Salace ◽

Christian Petit ◽

Marc Jourdain ◽

Dominique Vuillaume

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

High Electric Field ◽

Oxide Semiconductor ◽

Field Stress ◽

Thin Gate Oxide

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Textured Magnesium Titanate as Gate Oxide for GaN-Based Metal-Oxide-Semiconductor Capacitor

Journal of the American Ceramic Society ◽

10.1111/j.1551-2916.2011.04439.x ◽

2011 ◽

Vol 94 (4) ◽

pp. 1005-1007 ◽

Cited By ~ 11

Author(s):

Chu-Yun Hsiao ◽

Chuan-Feng Shih ◽

Chih-Hua Chien ◽

Cheng-Liang Huang

Keyword(s):

Metal Oxide ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Magnesium Titanate ◽

Metal Oxide Semiconductor Capacitor

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Characterization of metal‐oxide‐semiconductor transistors with very thin gate oxide

Journal of Applied Physics ◽

10.1063/1.336604 ◽

1986 ◽

Vol 59 (3) ◽

pp. 816-823 ◽

Cited By ~ 16

Author(s):

K. K. Hung ◽

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Gate Oxide

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Investigation of surface mobility in thin‐gate oxide metal‐oxide‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.335559 ◽

1985 ◽

Vol 58 (11) ◽

pp. 4245-4250

Author(s):

T. W. Chan ◽

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Surface Mobility ◽

Thin Gate Oxide

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A Novel Thin Gate-Oxide-Thickness Measurement Method by LDD (Lightly-Doped-Drain)- NMOS (N-Channel Metal-Oxide-Semiconductor) Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l1 ◽

1998 ◽

Vol 37 (Part 2, No. 1A/B) ◽

pp. L1-L3

Author(s):

Jiaw-Ren Shih ◽

Jian-Hsing Lee ◽

B. K. Liew ◽

Huey-Liang Hwang

Keyword(s):

Metal Oxide ◽

Measurement Method ◽

Gate Oxide ◽

Oxide Thickness ◽

Thickness Measurement ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxide Thickness ◽

Thin Gate Oxide ◽

Lightly Doped Drain

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Effect of Reverse Substrate Bias on Degradation of Ultra-Thin Gate-Oxide n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Different Stress Modes

Chinese Physics Letters ◽

10.1088/0256-307x/22/8/084 ◽

2005 ◽

Vol 22 (8) ◽

pp. 2127-2129

Author(s):

Zhao Yao ◽

Xu Ming-Zhen ◽

Tan Chang-Hua

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Substrate Bias ◽

Thin Gate Oxide

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Impact of the gate-electrode/dielectric interface on the low-frequency noise of thin gate oxide n-channel metal-oxide-semiconductor field-effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2007.02.011 ◽

2007 ◽

Vol 51 (4) ◽

pp. 627-632 ◽

Cited By ~ 8

Author(s):

C. Claeys ◽

E. Simoen ◽

P. Srinivasan ◽

D. Misra

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Dielectric Interface ◽

Thin Gate Oxide

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