Analysis of current‐voltage characteristics of metal‐insulator composite films

1986 ◽  
Vol 59 (3) ◽  
pp. 980-982 ◽  
Author(s):  
G. A. Niklasson ◽  
K. Brantervik
Keyword(s):  
Composite Films ◽  
Metal Insulator ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Светоизлучающие полевые транзисторы на основе композитных пленок полифлуорена и нанокристаллов CsPbBr-=SUB=-3-=/SUB=-

2019 ◽  
Vol 61 (2) ◽  
pp. 388
Author(s):  
А.Н. Алешин ◽  
И.П. Щербаков ◽  
Д.А. Кириленко ◽  
Л.Б. Матюшкин ◽  
В.А. Мошников
Keyword(s):  
Field Effect Transistors ◽  
Composite Films ◽  
Hole Mobility ◽  
Hole Transport ◽  
Component Ratio ◽  
Organic Field Effect Transistors ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract—Light-emitting organic field-effect transistors (LE-FETs) on the basis of composite films that consist of perovskite nanocrystals (CsPbBr_3) embedded in a matrix of conjugated polymer—polyfluorene (PFO)—have been obtained, and their electrical and optical properties have been investigated. Output and transfer current-voltage characteristics (I-Vs) of FETs based on PFO : CsPbBr_3 films (component ratio 1 : 1) have a slight hysteresis at temperatures of 100–300 K and are characteristic of hole transport. The hole mobility is ∼3.3 and ∼1.9 cm^2/(V s) at the modes of the saturation and low fields, respectively, at 250 K and reaches ∼5 cm^2/(V s) at 100 K. It has been shown that the application of pulsed voltage to LE-FETs based on PFO : CsPbBr_3 can reduce the ionic conductivity and provide electroluminescence in this structure at 300 K.

Effects of Additive Elements on Electrical Properties of Tantalum Oxide Films.

1995 ◽  
Vol 378 ◽  
Author(s):  
Hisayoshi Fujikawa ◽  
Yasunori Taga
Keyword(s):  
Electrical Properties ◽  
Conduction Mechanism ◽  
Defect Density ◽  
Tantalum Oxide ◽  
Composite Films ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Electrical Conduction Mechanisms ◽  
Insulating Properties ◽  
Nordheim Tunneling

AbstractTa2O5-based composite films prepared by magnetron sputtering have been investigated with respect to their dielectric properties. As additive third oxides, Y2O3 and WO3 were found to be effective in improving insulating properties without decreasing their dielectric constant. Furthermore, electrical properties of Ta2O5-Y2O3 films were investigated by measuring the current-voltage characteristics in the temperature range from 100 to 330 K. Measurement of temperature dependence of the leakage current revealed that the conduction mechanism at RT changed from the Poole-Frenkel type to the Fowler-Nordheim tunneling type by adding Y2O3 into Ta2O5. Based on the detailed analysis of the results, it is concluded that the addition of Y2O3 into the Ta2O5 film is effective in the reduction of defect density without high-temperature annealing and the alteration of electrical conduction mechanisms of the films.

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