Current–voltage characteristics of metal-insulator-semiconductor structures via quantum mechanical tunneling

Jihad M. Mohaidat; Riyad N. Ahmad-Bitar

doi:10.1063/1.121270

Current–voltage characteristics of metal-insulator-semiconductor structures via quantum mechanical tunneling

Applied Physics Letters ◽

10.1063/1.121270 ◽

1998 ◽

Vol 72 (18) ◽

pp. 2256-2258 ◽

Cited By ~ 6

Author(s):

Jihad M. Mohaidat ◽

Riyad N. Ahmad-Bitar

Keyword(s):

Quantum Mechanical ◽

Quantum Mechanical Tunneling ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Current Voltage ◽

Current Voltage Characteristics

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Current–Voltage Characteristics of AlN/GaN Heterostructure Metal Insulator Semiconductor Diode

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.1194 ◽

2001 ◽

Vol 40 (Part 1, No. 3A) ◽

pp. 1194-1198 ◽

Cited By ~ 9

Author(s):

Syunji Imanaga ◽

Fumihiko Nakamura ◽

Hiroji Kawai

Keyword(s):

Semiconductor Diode ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Gan Heterostructure

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Current-voltage characteristics of GaAs metal-insulator-semiconductor solar cells under illumination

Solar Cells ◽

10.1016/0379-6787(84)90107-8 ◽

1984 ◽

Vol 12 (3) ◽

pp. 277-283 ◽

Cited By ~ 3

Author(s):

A.K. Srivastava ◽

Sonali ◽

B.M. Arora ◽

S. Guha

Keyword(s):

Solar Cells ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Current Voltage ◽

Current Voltage Characteristics

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Current-Voltage Characteristics of a Metal-Insulator-Semiconductor Structure Containing Metal Oxide Nanoparticles within a Polyimide Matrix

Journal of the Korean Physical Society ◽

10.3938/jkps.50.1862 ◽

2007 ◽

Vol 50 (6) ◽

pp. 1862 ◽

Cited By ~ 1

Author(s):

Jae-Hoon Kim ◽

Dong Uk Lee ◽

Eun Kyu Kim

Keyword(s):

Metal Oxide ◽

Metal Oxide Nanoparticles ◽

Semiconductor Structure ◽

Oxide Nanoparticles ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Polyimide Matrix

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Peculiarities of Current–Voltage Characteristics of Al–p-CdxHg1-xTe Tunnel Metal–Insulator–Semiconductor Structure

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.05fh02 ◽

2011 ◽

Vol 50 (5S2) ◽

pp. 05FH02

Author(s):

Emil Huseynov ◽

Namig Ismayilov

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Current Voltage ◽

Current Voltage Characteristics

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Peculiarities of Current–Voltage Characteristics of Al–p-CdxHg1-xTe Tunnel Metal–Insulator–Semiconductor Structure

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.05fh02 ◽

2011 ◽

Vol 50 (5) ◽

pp. 05FH02

Author(s):

Emil Huseynov ◽

Namig Ismayilov

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Current Voltage ◽

Current Voltage Characteristics

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Effect of Layer-by-Layer Electrostatic Assemblies on the Surface Potential and Current Voltage Characteristic of Metal−Insulator−Semiconductor Structures

Langmuir ◽

10.1021/la901379d ◽

2009 ◽

Vol 25 (21) ◽

pp. 12529-12534 ◽

Cited By ~ 13

Author(s):

D. A. Gorin ◽

A. M. Yashchenok ◽

A. O. Manturov ◽

T. A. Kolesnikova ◽

H. Möhwald

Keyword(s):

Surface Potential ◽

Voltage Characteristic ◽

Layer By Layer ◽

Current Voltage Characteristic ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Current Voltage

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Influence of ultrashort pulses of electromagnetic radiation on parameters of metal-insulator-semiconductor structures

Semiconductors ◽

10.1134/1.1836058 ◽

2004 ◽

Vol 38 (12) ◽

pp. 1390-1393

Author(s):

V. A. Terekhov ◽

A. N. Man’ko ◽

E. N. Bormontov ◽

V. N. Levchenko ◽

S. Yu. Trebunskikh ◽

...

Keyword(s):

Electromagnetic Radiation ◽

Ultrashort Pulses ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1806439 ◽

2004 ◽

Vol 22 (6) ◽

pp. 2379-2383 ◽

Cited By ~ 24

Author(s):

Choelhwyi Bae ◽

Cristiano Krug ◽

Gerald Lucovsky

Keyword(s):

Electron Trapping ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

Applied Physics Letters ◽

10.1063/1.4891532 ◽

2014 ◽

Vol 105 (3) ◽

pp. 033512 ◽

Cited By ~ 52

Author(s):

P. Lagger ◽

P. Steinschifter ◽

M. Reiner ◽

M. Stadtmüller ◽

G. Denifl ◽

...

Keyword(s):

Gate Bias ◽

Metal Insulator ◽

Dielectric Barrier ◽

Metal Insulator Semiconductor ◽

Bias Stress ◽

Semiconductor Structures ◽

Charging Dynamics ◽

Gate Bias Stress

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Effects of dielectric thickness and contact area on current–voltage characteristics of thin film metal–insulator–metal diodes

Thin Solid Films ◽

10.1016/j.tsf.2007.08.067 ◽

2008 ◽

Vol 516 (8) ◽

pp. 2244-2250 ◽

Cited By ~ 55

Author(s):

Subramanian Krishnan ◽

Elias Stefanakos ◽

Shekhar Bhansali

Keyword(s):

Thin Film ◽

Contact Area ◽

Metal Insulator ◽

Dielectric Thickness ◽

Current Voltage ◽

Metal Insulator Metal ◽

Current Voltage Characteristics

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