Current-voltage characteristics of a metal-insulator-metal (MIM) element and its new band model

1996 ◽  
Author(s):  
Hongwu Liu ◽  
Jianxin Guo ◽  
Jianfeng Yuan ◽  
Kai Ma ◽  
Xinmin Huang
Keyword(s):  
Band Model ◽  
Metal Insulator ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Current Voltage Characteristics

Field and temperature dependent current-voltage characteristics of Al-Lu 2 O 3 -Al metal-insulator-metal diodes

2017 ◽  
Vol 520 ◽  
pp. 112-115 ◽  
Author(s):  
Shahnaz Akbar ◽  
Khalid Mahmood ◽  
M.F. Wasiq ◽  
M.Y. Nadeem ◽  
Muhammad Azhar Khan
Keyword(s):  
Temperature Dependent ◽  
Metal Insulator ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Current Voltage Characteristics

scholarly journals Characterization of 10,12-pentacosadiynoic acid Langmuir–Blodgett monolayers and their use in metal–insulator–metal tunnel devices

2014 ◽  
Vol 5 ◽  
pp. 2240-2247 ◽  
Author(s):  
Saumya Sharma ◽  
Mohamad Khawaja ◽  
Manoj K Ram ◽  
D Yogi Goswami ◽  
Elias Stefanakos
Keyword(s):  
Electron Tunneling ◽  
Metal Insulator ◽  
Precise Control ◽  
Force Microscopy ◽  
Langmuir Blodgett ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Current Voltage Characteristics ◽  
Monolayer Assembly

The characterization of Langmuir–Blodgett thin films of 10,12-pentacosadiynoic acid (PDA) and their use in metal–insulator–metal (MIM) devices were studied. The Langmuir monolayer behavior of the PDA film was studied at the air/water interface using surface tension–area isotherms of polymeric and monomeric PDA. Langmuir–Blodgett (LB, vertical deposition) and Langmuir–Schaefer (LS, horizontal deposition) techniques were used to deposit the PDA film on various substrates (glass, quartz, silicon, and nickel-coated film on glass). The electrochemical, electrical and optical properties of the LB and LS PDA films were studied using cyclic voltammetry, current–voltage characteristics (I–V), and UV–vis and FTIR spectroscopies. Atomic force microscopy measurements were performed in order to analyze the surface morphology and roughness of the films. A MIM tunnel diode was fabricated using a PDA monolayer assembly as the insulating barrier, which was sandwiched between two nickel layers. The precise control of the thickness of the insulating monolayers proved critical for electron tunneling to take place in the MIM structure. The current–voltage characteristics of the MIM diode revealed tunneling behavior in the fabricated Ni–PDA LB film–Ni structures.

scholarly journals CVD-Grown Monolayer Graphene-Based Geometric Diode for THz Rectennas

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1986
Author(s):  
Heng Wang ◽  
Gaurav Jayaswal ◽  
Geetanjali Deokar ◽  
John Stearns ◽  
Pedro M. F. J. Costa ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Monolayer Graphene ◽  
Zero Bias ◽  
Metal Insulator ◽  
Particle In Cell ◽  
Neck Width ◽  
Exfoliated Graphene ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Current Voltage Characteristics

For THz rectennas, ultra-fast diodes are required. While the metal–insulator–metal (MIM) diode has been investigated in recent years, it suffers from large resistance and capacitance, as well as a low cut-off frequency. Alternatively, a geometric diode can be used, which is more suitable due to its planar structure. However, there is only one report of a THz geometric diode based on a monolayer graphene. It is based on exfoliated graphene, and thus, it is not suitable for mass production. In this work, we demonstrate chemical vapor deposition (CVD)-grown monolayer graphene based geometric diodes, which are mass-producible. The diode’s performance has been studied experimentally by varying the neck widths from 250–50 nm, the latter being the smallest reported neck width for a graphene geometric diode. It was observed that by decreasing the neck widths, the diode parameters such as asymmetry, nonlinearity, zero-bias resistance, and responsivity increased within the range studied. For the 50 nm neck width diode, the asymmetry ratio was 1.40 for an applied voltage ranging from −2 V to 2 V, and the zero-bias responsivity was 0.0628 A/W. The performance of the diode was also verified through particle-in-cell Monte Carlo simulations, which showed that the simulated current-voltage characteristics were consistent with our experimental results.

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