Impact of proton-radiation-induced spacer damage on the dc characteristics degradation in deep-submicron metal-oxide-semiconductor field effect transistors

Shoubin Xue; Ru Huang; Pengfei Wang; Wenhua Wang; Dake Wu; Yunpeng Pei; Xing Zhang

doi:10.1063/1.3106163

Impact of proton-radiation-induced spacer damage on the dc characteristics degradation in deep-submicron metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3106163 ◽

2009 ◽

Vol 105 (8) ◽

pp. 084505 ◽

Cited By ~ 9

Author(s):

Shoubin Xue ◽

Ru Huang ◽

Pengfei Wang ◽

Wenhua Wang ◽

Dake Wu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Proton Radiation ◽

Dc Characteristics ◽

Radiation Induced

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Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs)

Chinese Physics ◽

10.1088/1009-1963/16/7/052 ◽

2007 ◽

Vol 16 (7) ◽

pp. 2111-2115 ◽

Cited By ~ 3

Author(s):

Liu Hong-Xia ◽

Hao Yue

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Hot Carriers ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability

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Reduction of Radiation-Induced Degradation in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's) with Gate Oxides Prepared by Repeated Rapid Thermal $\bf N_{2}O$ Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l916 ◽

1994 ◽

Vol 33 (Part 2, No. 7A) ◽

pp. L916-L917 ◽

Cited By ~ 1

Author(s):

You-Lin Wu ◽

Kang-Min Kuo ◽

Jenn-Gwo Hwu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxides ◽

Radiation Induced

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Effects of Hot Carriers on DC and RF Performances of Deep Submicron p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Various Oxide Layer Thicknesses

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2633 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2633-2635 ◽

Cited By ~ 2

Author(s):

Mao-Chyuan Tang ◽

Yean-Kuen Fang ◽

Wen-Shiang Liao ◽

David C. Chen ◽

Chune-Sin Yeh ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carriers ◽

Rf Performances

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A Comparative Study of n+/p Junction Formation for Deep Submicron Elevated Source/Drain Metal Oxide Semiconductor Field Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1838066 ◽

1997 ◽

Vol 144 (10) ◽

pp. 3659-3664 ◽

Cited By ~ 5

Author(s):

J. Sun ◽

R. F. Bartholomew ◽

K. Bellur ◽

A. Srivastava ◽

C. M. Osburn ◽

...

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Junction Formation ◽

Elevated Source

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Inverse Modeling as a Basis for Predictive Device Simulation of Deep Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.5437 ◽

1998 ◽

Vol 37 (Part 1, No. 10) ◽

pp. 5437-5443 ◽

Cited By ~ 6

Author(s):

Hiroshi Goto ◽

Seiichiro Yamaguchi ◽

Christoph Jungemann

Keyword(s):

Metal Oxide ◽

Inverse Modeling ◽

Field Effect ◽

Field Effect Transistors ◽

Device Simulation ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Low-frequency noise in deep-submicron metal–oxide–semiconductor field-effect transistors

IEE Proceedings - Circuits Devices and Systems ◽

10.1049/ip-cds:20020332 ◽

2002 ◽

Vol 149 (1) ◽

pp. 23-31 ◽

Cited By ~ 26

Author(s):

Z. Çelik-Butler

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise

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Investigation on temperature dependent DC characteristics of gallium oxide metal-oxide-semiconductor field-effect transistors from 25 °C to 300 °C

Applied Physics Express ◽

10.7567/1882-0786/ab0181 ◽

2019 ◽

Vol 12 (4) ◽

pp. 041001 ◽

Cited By ~ 4

Author(s):

Dian Lei ◽

Kaizhen Han ◽

Ying Wu ◽

Zhihong Liu ◽

Xiao Gong

Keyword(s):

Metal Oxide ◽

Gallium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Dependent ◽

Dc Characteristics

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Characteristics of Deep Submicron Grooved-Gate P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.5893 ◽

2001 ◽

Vol 40 (Part 1, No. 10) ◽

pp. 5893-5899

Author(s):

Hongxia Ren ◽

Yue Hao ◽

Lei Xue

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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OS20-3-1 Evaluation of uniaxial-stress effects on DC characteristics of n-type metal-oxide-semiconductor field-effect transistors

The Abstracts of ATEM International Conference on Advanced Technology in Experimental Mechanics Asian Conference on Experimental Mechanics ◽

10.1299/jsmeatem.2011.10._os20-3-1- ◽

2011 ◽

Vol 2011.10 (0) ◽

pp. _OS20-3-1-

Author(s):

Masaaki Koganemaru ◽

Keisuke Yoshida ◽

Naohiro Tada ◽

Toru Ikeda ◽

Noriyuki Miyazaki ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Uniaxial Stress ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Effects ◽

Dc Characteristics

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Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1604452 ◽

2003 ◽

Vol 94 (7) ◽

pp. 4461-4469 ◽

Cited By ~ 31

Author(s):

N. B. Lukyanchikova ◽

M. V. Petrichuk ◽

N. Garbar ◽

A. Mercha ◽

E. Simoen ◽

...

Keyword(s):

Metal Oxide ◽

Valence Band ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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