Effects of ion‐implantation‐induced damages and impurity on platinum silicide formation

1982 ◽  
Vol 53 (9) ◽  
pp. 6144-6147 ◽  
Author(s):  
Y. Mashiko ◽  
H. Koyama ◽  
S. Kawazu ◽  
T. Kashiwaki
Keyword(s):  
Ion Implantation ◽  
Silicide Formation ◽  
Platinum Silicide

Buried Oxide and Silicide Formation by High-Dose Implantation in Silicon

MRS Bulletin ◽  
1992 ◽  
Vol 17 (6) ◽  
pp. 40-46 ◽  
Author(s):  
G.K. Celler ◽  
Alice E. White
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Integrated Circuit ◽  
High Dose ◽  
High Current ◽  
Silicide Formation ◽  
Semiconductor Substrate ◽  
Beam Currents ◽  
New Generation ◽  
High Dose Implantation

Experiments in ion implantation were first performed almost 40 years ago by nuclear physicists. More recently, ion implanters have become permanent fixtures in integrated circuit processing lines. Manufacture of the more complex integrated circuits may involve as many as 10 different ion implantation steps. Implantation is used primarily at f luences of 1012–1015 ions/cm2 to tailor the electrical properties of a semiconductor substrate, but causing only a small perturbation in the composition of the target (see the article by Seidel and Larson in this issue of the MRS Bulletin). Applications of implantation had been limited by the small beam currents that were available, but recently a new generation of high-current implanters has been developed. This high-current capability allows implanting concentrations up to three orders of magnitude higher than those required for doping—enough to create a compound.

Platinum silicide formation on Si1−yCy epitaxial layers

2013 ◽  
Vol 574 ◽  
pp. 415-420 ◽  
Author(s):  
Kan-Rong Lee ◽  
I-Ping Lin ◽  
Hung-Tai Chang ◽  
Sheng-Wei Lee
Keyword(s):  
Epitaxial Layers ◽  
Silicide Formation ◽  
Platinum Silicide

On the kinetics of platinum silicide formation

2011 ◽  
Vol 98 (8) ◽  
pp. 082102 ◽  
Author(s):  
Erik J. Faber ◽  
Rob A. M. Wolters ◽  
Jurriaan Schmitz
Keyword(s):  
Silicide Formation ◽  
Platinum Silicide ◽  
Kinetics Of

Effect of Oxidizing Ambients on Platinum Silicide Formation: II . Auger and Backscattering Analyses

1975 ◽  
Vol 122 (12) ◽  
pp. 1732-1736 ◽  
Author(s):  
R. J. Blattner ◽  
C. A. Evans ◽  
S. S. Lau ◽  
J. W. Mayer ◽  
B. M. Ullrich
Keyword(s):  
Silicide Formation ◽  
Platinum Silicide

Phase Formation of Platinum Silicides Formed by Ion Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Nader M. Kalkhoran ◽  
F. Namavar ◽  
D. Perry ◽  
E. Cortesi
Keyword(s):  
Ion Implantation ◽  
Phase Formation ◽  
Silicide Phase ◽  
Substrate Orientation ◽  
Platinum Silicide ◽  
Annealing Conditions ◽  
Ion Implanted

ABSTRACTWe have studied the formation of platinum silicide layers by ion implantation and annealing, and have determined the dependence of platinum silicide phase formation on ion implantation conditions and substrate orientation. The results indicate that in most cases, the ion implanted layer consists of PtSi phase. However, depending on the implantation and annealing conditions and substrate orientation, other phases, including Pt2Si, Pt3Si, and Pt12Si5, as well as Si and Pt microcrystals, also form.

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