Stable titanium silicide formation on field oxide after BF[sub 2] ion implantation

2001 ◽  
Vol 19 (2) ◽  
pp. 372 ◽  
Author(s):  
Martin Mollat ◽  
Alexander A. Demkov ◽  
Peter Fejes ◽  
Dennis Werho
Keyword(s):  
Ion Implantation ◽  
Titanium Silicide ◽  
Silicide Formation ◽  
Field Oxide

Ultra-Shallow Raised P+N Junctions with Self-Aligned Titanium Silicide Contacts formed by Boron Outdiffusion from Selectively Deposited Silicon Epitaxial Layers

1995 ◽  
Vol 387 ◽  
Author(s):  
H. T. Shih ◽  
K. E. Violette ◽  
M. C. Öztürk
Keyword(s):  
Ion Implantation ◽  
Sheet Resistance ◽  
Total Pressure ◽  
Titanium Silicide ◽  
Background Concentration ◽  
Epitaxial Layers ◽  
Silicide Formation ◽  
Implantation Damage ◽  
Selective Etch ◽  
Current Densities

AbstractIn this study, we have fabricated ultra-shallow p+n junctions by boron outdiffusion from selectively deposited Si epitaxial layers. The undoped layers (900 – 1000 Å) were selectively deposited on active areas in a UHV-RTCVD reactor using Si2H6 and Cl2 at 800°C and at a total pressure less than 30 mTorr. Junctions were formed by BF2 ion-implantation into epitaxial layers with and without Ge preamorphization followed by RTA at 1000°C and 1050°C for 10 s in Ar. Junction depths ranging from 400 Å to 700 Å were formed at a background concentration of l×1016 cm−3. Abrupt boron profiles with epitaxy/substrate interface concentrations on the order of 1020 cm-3 were formed. Self-aligned TiSi2 was formed at four different thicknesses by evaporating 100, 200, 300 or 400 Å thick Ti followed by a two-step RTA cycle with a selective etch between to remove the unreacted Ti on Si02. Our results show that raised junctions with a Ti thickness of 400 Å (corresponding to a TiSi2 thickness over 900 Å and consumption of the entire epitaxial layer) exhibit a reverse leakage of less than 10 pA for a device area of 800×800 μm2. This corresponds to areal and peripheral leakage current densities of 67 pA/cm2 and 4 pA/cm. Therefore, thick silicide layers can be used on raised junctions reducing the junction sheet resistance and eliminating the possibility of silicide agglomeration. Furthermore, implantation damage in substrate is eliminated by confining the implant into the raised region which is later consumed during silicide formation.

A study of titanium silicide formation by multiple arsenic-ion-implantation

1993 ◽  
Vol 36 (5) ◽  
pp. 705-709 ◽  
Author(s):  
P.C. Chen ◽  
J.Y. Lin ◽  
H.L. Hwang
Keyword(s):  
Ion Implantation ◽  
Titanium Silicide ◽  
Silicide Formation

Oxygen behavior during titanium silicide formation by rapid thermal annealing

1987 ◽  
Vol 62 (10) ◽  
pp. 4319-4321 ◽  
Author(s):  
R. Pantel ◽  
D. Levy ◽  
D. Nicolas ◽  
J. P. Ponpon
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Titanium Silicide ◽  
Silicide Formation

scholarly journals Titanium Silicide Formation in Presence of Oxygen

1992 ◽  
Vol 15 (1) ◽  
pp. 9-26 ◽  
Author(s):  
C. Nobili ◽  
F. Nava ◽  
G. Ottaviani ◽  
M. Costato ◽  
G. De Santi ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Titanium Silicide ◽  
Silicide Formation ◽  
Metal Oxidation ◽  
X Ray Diffraction ◽  
Amorphous Films ◽  
Titanium Disilicide ◽  
X Ray

In-situ resistivity vs. temperature, Rutherford backscattering spectrometry, Auger electron spectroscopy and X-ray diffraction measurements have been performed in order to study the effects arising from the presence of oxygen in the annealing ambient on the integrity of amorphous films of TiSix, with x ranging from 1.45 to 2.1. Crystalisation occurs around 400 C. The presence of oxygen produces the formation of silicon and titanium oxide around 500 C. Critical analysis of the experimental results have indicated that metal oxidation is inhibited when an excess of silicon is present, which suggests the use of a sputtered Si coating cap as a medium capable of effectively decoupling the silicide film from oxygen. This avoids unwanted Ti oxidation even in heavily oxygen contaminated ambients up to the highest temperatures used for the formation of low resistivity titanium disilicide.

High-Dose Titanium Ion Implantation into Epitaxial Si/3C-SiC/Si Layer Systems for Electrical Contact Formation

2000 ◽  
Vol 622 ◽  
Author(s):  
Jörg K.N. Lindner ◽  
Stephanie Wenzel ◽  
Bernd Stritzker
Keyword(s):  
Surface Layer ◽  
Solid State ◽  
Ion Implantation ◽  
Silicon Substrate ◽  
Ion Beam ◽  
Electrical Contact ◽  
Titanium Silicide ◽  
Solid State Reactions ◽  
High Dose ◽  
Homogeneous Surface

ABSTRACTHigh-dose titanium implantations have been performed into ion beam synthesized heteroepitaxial layer systems of Si/3C-SiC/Si(100) in order to study the formation of titanium silicide layers in the silicon top layer. The structure and composition of layers was analysed using RBS, XRD, XTEM and EFTEM. The sputtering rates of 180 keV Ti ions were determined using the lower SiC/Si interface as a marker. A homogeneous surface layer with the stoichiometry of TiSi2 was formed by a nearly stoichiometric implantation and subsequent annealing. The formation of more metal-rich silicides was observed at doses where the peak Ti concentration largely exceeds the TiSi2 stoichiometry and where the total amount of Ti atoms in the top layer is greater than the amount needed to convert the entire Si top layer into TiSi2. Under these conditions, strong solid state reactions of the implanted Ti atoms with the buried SiC layer and the silicon substrate are observed.

Buried Oxide and Silicide Formation by High-Dose Implantation in Silicon

MRS Bulletin ◽  
1992 ◽  
Vol 17 (6) ◽  
pp. 40-46 ◽  
Author(s):  
G.K. Celler ◽  
Alice E. White
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Integrated Circuit ◽  
High Dose ◽  
High Current ◽  
Silicide Formation ◽  
Semiconductor Substrate ◽  
Beam Currents ◽  
New Generation ◽  
High Dose Implantation

Experiments in ion implantation were first performed almost 40 years ago by nuclear physicists. More recently, ion implanters have become permanent fixtures in integrated circuit processing lines. Manufacture of the more complex integrated circuits may involve as many as 10 different ion implantation steps. Implantation is used primarily at f luences of 1012–1015 ions/cm2 to tailor the electrical properties of a semiconductor substrate, but causing only a small perturbation in the composition of the target (see the article by Seidel and Larson in this issue of the MRS Bulletin). Applications of implantation had been limited by the small beam currents that were available, but recently a new generation of high-current implanters has been developed. This high-current capability allows implanting concentrations up to three orders of magnitude higher than those required for doping—enough to create a compound.

Effects of Ion Implantation Doping on the Formation of Titanium Silicide on the Diffusion Layers

1985 ◽  
Vol 54 ◽  
Author(s):  
H. Matsui ◽  
H. Ohtsuki ◽  
M. Ino ◽  
S. Ushio
Keyword(s):  
Ion Implantation ◽  
Oxide Films ◽  
Titanium Silicide ◽  
Si Substrate ◽  
Surface Layers ◽  
Critical Dose ◽  
Diffusion Layers

ABSTRACTSi samples, with and without masking oxide films, implanted with various doses of As, P, or BF2 have been evaluated on the formation of titanium suicides from titanium films. In all cases, suicide reaction for implantation with masking oxide films is more difficult than that for implantation without masking oxide films. Suicide reaction becomes more difficult with decreasing implant energy in the range over a critical dose. In the case of implantation with masking oxide films, knocked oxygen has been found at the surface of Si substrate. Suicide formation after removing the surface layers containing considerable amount of knocked oxygen with argon back-sputtering is as easy as suicide formation for implantation without masking oxide. The difficulty of Ti silicidation for implantation with masking oxide films is believed to be due to the effects of interference from knocked oxygen.

Sign in / Sign up

Export Citation Format

Share Document