Phase Formation of Platinum Silicides Formed by Ion Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Nader M. Kalkhoran ◽  
F. Namavar ◽  
D. Perry ◽  
E. Cortesi
Keyword(s):  
Ion Implantation ◽  
Phase Formation ◽  
Silicide Phase ◽  
Substrate Orientation ◽  
Platinum Silicide ◽  
Annealing Conditions ◽  
Ion Implanted

ABSTRACTWe have studied the formation of platinum silicide layers by ion implantation and annealing, and have determined the dependence of platinum silicide phase formation on ion implantation conditions and substrate orientation. The results indicate that in most cases, the ion implanted layer consists of PtSi phase. However, depending on the implantation and annealing conditions and substrate orientation, other phases, including Pt2Si, Pt3Si, and Pt12Si5, as well as Si and Pt microcrystals, also form.

Amorphous Phase Formation and Recrystallization in Ion-Implanted Silicides

1983 ◽  
Vol 27 ◽  
Author(s):  
C.A. Hewett ◽  
I. Suni ◽  
S.S. Lau ◽  
L.S. Hung ◽  
D.M. Scott
Keyword(s):  
Melting Point ◽  
Ion Implantation ◽  
Phase Transformations ◽  
Amorphous Phase ◽  
Phase Formation ◽  
Amorphous Phases ◽  
Post Annealing ◽  
Amorphous Phase Formation ◽  
Ion Implanted

ABSTRACTIon implantation induced phase transformations and recrystallization during post-annealing in CoSi2, CrSi2, and Pd2Si are studied. All three silicides are found to reorder at about 1/3 the melting point of the silicide. We speculate that ion-implanted silicides recrystallize by the same mechanism and that amorphous phases produced by implantation are unstable rather than metastable.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Quantitative Ruthenium Method for Analysis of Nitrogen Ion-Implanted Titanium Alloy (Ti-6AI-4V) and the Effect on Bacterial Adherence

1991 ◽  
Vol 252 ◽  
Author(s):  
Beverly L. Giammara ◽  
James M. Williams ◽  
David J. Birch ◽  
Joanne J. Dobbins
Keyword(s):  
Pseudomonas Aeruginosa ◽  
Titanium Alloy ◽  
Ion Implantation ◽  
Growth Period ◽  
Scattered Electron ◽  
Nitrogen Ion Implantation ◽  
Total Fluence ◽  
Nitrogen Ion ◽  
Electron Imaging ◽  
Ion Implanted

ABSTRACTThe effects of nitrogen ion implantation of Ti-6AI-4V alloy on growth of Pseudomonas aeruginosa bacteria on surfaces of the alloy have been investigated. Results for ion implanted samples were compared with controls with similarly smoothly polished surfaces and with controls that had intentionally roughened surfaces. The test consisted of exposing sterile alloy samples to a microbiological broth, to which 24 hour-old cultures of Pseudomonas aeruginosa had been added. After bioassociation at normal temperature 37°C, bacteria adhering to the surface were fixed and treated with a new ruthenium tetroxide staining method, and quantified by use of scanning electron microscopy (SEM), back-scattered electron imaging and EDAX energy dispersive microanalysis. For smooth samples of the alloy, after a 12 hour growth period, the retained bacteria (revealed by the biologically incorporated ruthenium), decreased monotonically with nitrogen dose out to a total fluence of approximately 7 × 1017/cm2 in an affected depth of approximately 0.1500 μm. The SEM confirmed that the Pseudomonas aeruginosa adhered equally to control materials. The ruthenium studies revealed that the amount of bacterial adhesion is indirectly proportional to the nitrogen ion implantation of the titanium. The greater the percentage of nitrogen ion implantation in the titanium alloy, the less bacteria colonized the disk.

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

scholarly journals Fabrication of plasmonic dye-sensitized solar cells using ion-implanted photoanodes

RSC Advances ◽  
2019 ◽  
Vol 9 (35) ◽  
pp. 20375-20384 ◽  
Author(s):  
Navdeep Kaur ◽  
Aman Mahajan ◽  
Viplove Bhullar ◽  
Davinder Paul Singh ◽  
Vibha Saxena ◽  
...  
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Metal Nanoparticles ◽  
Dye Sensitized Solar Cells ◽  
Implantation Technique ◽  
Dye Sensitized ◽  
Stability Issue ◽  
The Stability ◽  
Sensitized Solar Cells ◽  
Ion Implanted

Ion implantation technique can resolve the stability issue of metal nanoparticles with liquid iodine-based electrolyte to improve PCE of plasmonic dye-sensitized solar cells.

scholarly journals Effect of Silicon, Titanium, and Zirconium Ion Implantation on NiTi Biocompatibility

2012 ◽  
Vol 2012 ◽  
pp. 1-16 ◽  
Author(s):  
L. L. Meisner ◽  
A. I. Lotkov ◽  
V. A. Matveeva ◽  
L. V. Artemieva ◽  
S. N. Meisner ◽  
...  
Keyword(s):  
Stem Cells ◽  
Flow Cytometry ◽  
Mesenchymal Stem Cells ◽  
Ion Implantation ◽  
Cell Counting ◽  
High Dose ◽  
Surface Layers ◽  
Test Flow ◽  
Ion Implanted

The objective of the work was to study the effect of high-dose ion implantation (HDII) of NiTi surface layers with Si Ti, or Zr, on the NiTi biocompatibility. The biocompatibility was judged from the intensity and peculiarities of proliferation of mesenchymal stem cells (MSCs) on the NiTi specimen surfaces treated by special mechanical, electrochemical, and HDII methods and differing in chemical composition, morphology, and roughness. It is shown that the ion-implanted NiTi specimens are nontoxic to rat MSCs. When cultivated with the test materials or on their surfaces, the MSCs retain the viability, adhesion, morphology, and capability for proliferationin vitro, as evidenced by cell counting in a Goryaev chamber, MTT test, flow cytometry, and light and fluorescence microscopy. The unimplanted NiTi specimens fail to stimulate MSC proliferation, and this allows the assumption of bioinertness of their surface layers. Conversely, the ion-implanted NiTi specimens reveal properties favorable for MSC proliferation on their surface.

Sign in / Sign up

Export Citation Format

Share Document