Effective work function tuning in high-κ dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping

A. Fet; V. Häublein; A. J. Bauer; H. Ryssel; L. Frey

doi:10.1063/1.3303976

Effective work function tuning in high-κ dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping

Applied Physics Letters ◽

10.1063/1.3303976 ◽

2010 ◽

Vol 96 (5) ◽

pp. 053506 ◽

Cited By ~ 6

Author(s):

A. Fet ◽

V. Häublein ◽

A. J. Bauer ◽

H. Ryssel ◽

L. Frey

Keyword(s):

Metal Oxide ◽

Work Function ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effective Work ◽

Effective Work Function ◽

Lanthanide Doping ◽

Work Function Tuning

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Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices

Journal of Applied Physics ◽

10.1063/1.4816090 ◽

2013 ◽

Vol 114 (3) ◽

pp. 034505 ◽

Cited By ~ 12

Author(s):

R. K. Pandey ◽

Rajesh Sathiyanarayanan ◽

Unoh Kwon ◽

Vijay Narayanan ◽

K. V. R. M. Murali

Keyword(s):

Metal Oxide ◽

Work Function ◽

Point Defects ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effective Work ◽

Effective Work Function

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Experimental study of the minimum metal gate thickness required to fix the effective work function in metal-oxide-semiconductor capacitors

Applied Physics Letters ◽

10.1063/1.2833697 ◽

2008 ◽

Vol 92 (2) ◽

pp. 023503 ◽

Cited By ~ 10

Author(s):

F. Fillot ◽

S. Maîtrejean ◽

I. Matko ◽

B. Chenevier

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Work Function ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Effective Work ◽

Effective Work Function

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Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521471 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01A905 ◽

Cited By ~ 1

Author(s):

A. Fet ◽

V. Häublein ◽

A. J. Bauer ◽

H. Ryssel ◽

L. Frey

Keyword(s):

Metal Oxide ◽

Work Function ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Effective Work ◽

Effective Work Function ◽

High K ◽

P Type

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Efficient methodology for estimation of metal effective work function, interface trap, and fixed oxide charges in metal-oxide-semiconductor capacitors with dual layer high - κ/SiO2 dielectric

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5120268 ◽

2019 ◽

Vol 37 (6) ◽

pp. 062204

Author(s):

Piyas Samanta

Keyword(s):

Metal Oxide ◽

Work Function ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Effective Work ◽

Effective Work Function

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Effects of post metallization annealing on modulation in effective work function of platinum gate electrode in germanium metal-oxide-semiconductor devices

Surface and Interface Analysis ◽

10.1002/sia.4969 ◽

2012 ◽

Vol 44 (11-12) ◽

pp. 1436-1439

Author(s):

S. V. Jagadeesh Chandra ◽

Woong-Ki Hong ◽

Jin-Sung Kim ◽

Hyobong Hong ◽

Chel-Jong Choi

Keyword(s):

Metal Oxide ◽

Work Function ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Effective Work ◽

Effective Work Function

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Effective work function engineering by lanthanide ion implantation of metal-oxide semiconductor gate stacks

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3021043 ◽

2009 ◽

Vol 27 (1) ◽

pp. 290 ◽

Cited By ~ 4

Author(s):

A. Fet ◽

V. Häublein ◽

A. J. Bauer ◽

H. Ryssel

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Work Function ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Lanthanide Ion ◽

Effective Work ◽

Effective Work Function

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Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices

Thin Solid Films ◽

10.1016/j.tsf.2011.10.137 ◽

2012 ◽

Vol 520 (14) ◽

pp. 4556-4558 ◽

Cited By ~ 8

Author(s):

S. V. Jagadeesh Chandra ◽

E. Fortunato ◽

R. Martins ◽

Chel-Jong Choi

Keyword(s):

Metal Oxide ◽

Work Function ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Effective Work ◽

Effective Work Function

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Enabling Effective Work Function Tuning by RFPVD Metal Oxide on High-k Gate Dielectric

ECS Meeting Abstracts ◽

10.1149/ma2008-01/16/632 ◽

2008 ◽

Keyword(s):

Metal Oxide ◽

Work Function ◽

Gate Dielectric ◽

Effective Work ◽

Effective Work Function ◽

High K ◽

Work Function Tuning ◽

High K Gate Dielectric

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Enabling Effective Work Function Tuning by RF-PVD Metal Oxide on High-k Gate Dielectric

ECS Transactions ◽

10.1149/1.2911493 ◽

2019 ◽

Vol 13 (1) ◽

pp. 143-150 ◽

Cited By ~ 2

Author(s):

Naomi Yoshida ◽

Xianmin Tang ◽

Khaled Ahmed ◽

Giuseppina Conti ◽

Dave Liu ◽

...

Keyword(s):

Metal Oxide ◽

Work Function ◽

Gate Dielectric ◽

Effective Work ◽

Effective Work Function ◽

High K ◽

Work Function Tuning ◽

High K Gate Dielectric

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Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications

Applied Physics Letters ◽

10.1063/1.2136425 ◽

2005 ◽

Vol 87 (22) ◽

pp. 223503 ◽

Cited By ~ 8

Author(s):

Rashmi Jha ◽

JaeHoon Lee ◽

Prashant Majhi ◽

Veena Misra

Keyword(s):

Metal Oxide ◽

Work Function ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate Electrodes ◽

Metal Gate ◽

Gate Electrodes ◽

Multiple Layer ◽

Work Function Tuning

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