Effective work function engineering by lanthanide ion implantation of metal-oxide semiconductor gate stacks

2009 ◽  
Vol 27 (1) ◽  
pp. 290 ◽  
Author(s):  
A. Fet ◽  
V. Häublein ◽  
A. J. Bauer ◽  
H. Ryssel
Keyword(s):  
Ion Implantation ◽  
Metal Oxide ◽  
Work Function ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stacks ◽  
Lanthanide Ion ◽  
Effective Work ◽  
Effective Work Function

Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology $(\hbox{Poly-Si/TiN/SiO}_{2})$

2007 ◽  
Vol 28 (12) ◽  
pp. 1089-1091 ◽  
Author(s):  
R. Singanamalla ◽  
H. Y. Yu ◽  
B. Van Daele ◽  
S. Kubicek ◽  
K. De Meyer
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
Aluminum Ion
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