Contact resistance in few and multilayer graphene devices

2010 ◽  
Vol 96 (1) ◽  
pp. 013512 ◽  
Author(s):  
A. Venugopal ◽  
L. Colombo ◽  
E. M. Vogel
Keyword(s):  
Contact Resistance ◽  
Multilayer Graphene ◽  
Graphene Devices

scholarly journals Influence of Humidity on Contact Resistance in Graphene Devices

2018 ◽  
Vol 10 (48) ◽  
pp. 41738-41746 ◽  
Author(s):  
Arne Quellmalz ◽  
Anderson D. Smith ◽  
Karim Elgammal ◽  
Xuge Fan ◽  
Anna Delin ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Graphene Devices

Low-Contact-Resistance Contacts to Graphene via Metal-Mediated Etching

2013 ◽  
Vol 1553 ◽  
Author(s):  
Wei Sun Leong ◽  
John T.L. Thong
Keyword(s):  
Contact Resistance ◽  
Promising Method ◽  
Pristine Graphene ◽  
Cmos Process ◽  
Metal Contacts ◽  
Ambient Conditions ◽  
Etching Technique ◽  
Graphene Devices

ABSTRACTThe theoretically-predicted enhancement of metal-graphene contacts using the “end-contacted” configuration is studied. Graphene edges at the source/drain regions are created via a CMOS process compatible metal-assisted etching technique. The on-resistance of a graphene device with cobalt-etched-graphene contacts shows 6 times improvement compared to pristine graphene device. Apart from that, four-point contacted graphene devices with nickel-etched-graphene contacts were fabricated and tested under ambient conditions. The proposed graphene devices exhibit contact resistance as low as 14 Ωμm, with an average of 90 Ωμm. Thus, forming metal-etched-graphene contacts is a promising method to obtain low-contact resistance metal contacts to graphene.

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

2015 ◽  
Vol 32 (11) ◽  
pp. 117204 ◽  
Author(s):  
Ze-Zhao He ◽  
Ke-Wu Yang ◽  
Cui Yu ◽  
Jia Li ◽  
Qing-Bin Liu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Epitaxial Graphene ◽  
Graphene Devices

scholarly journals Contact Resistance Induced Variability in Graphene Field Effect Transistors

2021 ◽  
Vol 13 (1) ◽  
pp. 153-163
Author(s):  
S. Behera ◽  
S. R. Pattanaik ◽  
G. Dash
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
High Performance ◽  
Semiconductor Device ◽  
Field Effect Transistors ◽  
Simulation Method ◽  
Process Variability ◽  
Graphene Field Effect Transistor ◽  
Dual Gate ◽  
Graphene Devices

The success of the graphene field-effect transistor (GFET) is primarily based on solving the problems associated with the growth and transfer of high-quality graphene, the deposition of dielectrics and contact resistance. The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. This is because process variability is inherent in semiconductor device manufacturing. Two units, even manufactured in the same batch, never show identical characteristics. Therefore, it is imperative that the effect of variability be studied with a view to obtain equivalent performance from similar devices. In this study, we undertake the variability of source and drain contact resistances and their effects on the performance of GFET. For this we have used a simulation method developed by us. The results show that the DC characteristics of GFET are highly dependent on the channel resistance. Also the ambipolar characteristics are strongly affected by the variation of source and drain resistances. We have captured their impact on the output as well as transfer characteristics of a dual gate GFET.

Epitaxial Graphenes on Silicon Carbide

MRS Bulletin ◽  
2010 ◽  
Vol 35 (4) ◽  
pp. 296-305 ◽  
Author(s):  
Phillip N. First ◽  
Walt A. de Heer ◽  
Thomas Seyller ◽  
Claire Berger ◽  
Joseph A. Stroscio ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electronic Structure ◽  
Weak Coupling ◽  
Materials Science ◽  
Epitaxial Graphene ◽  
Multilayer Graphene ◽  
Wafer Scale ◽  
Graphene Layers ◽  
Salient Features ◽  
Graphene Devices

AbstractThis article reviews the materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals and progress toward the deterministic manufacture of graphene devices. We show that the growth of epitaxial graphene on Si-terminated SiC(0001) differs from growth on the C-terminated SiC(0001) surface, resulting in, respectively, strong and weak coupling to the substrate and to successive graphene layers. Monolayer epitaxial graphene on either surface displays the expected electronic structure and transport characteristics of graphene, but the non-graphitic stacking of multilayer graphene on SiC(0001) determines an electronic structure much different from that of graphitic multilayers on SiC(0001). This materials system is rich in subtleties, and graphene grown on the two polar faces of SiC differs in important ways, but all of the salient features of ideal graphene are found in these epitaxial graphenes, and wafer-scale fabrication of multi-GHz devices already has been achieved.

Reduction of metal contact resistance of graphene devices via CO2 cluster cleaning

2014 ◽  
Vol 104 (22) ◽  
pp. 223110 ◽  
Author(s):  
Sarang Gahng ◽  
Chang Ho Ra ◽  
Yu Jin Cho ◽  
Jang Ah Kim ◽  
Taesung Kim ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Metal Contact ◽  
Graphene Devices

scholarly journals Ultra-low contact resistance in graphene devices at the Dirac point

2D Materials ◽  
2018 ◽  
Vol 5 (2) ◽  
pp. 025014 ◽  
Author(s):  
Luca Anzi ◽  
Aida Mansouri ◽  
Paolo Pedrinazzi ◽  
Erica Guerriero ◽  
Marco Fiocco ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Dirac Point ◽  
Graphene Devices

scholarly journals Low contact resistance in epitaxial graphene devices for quantum metrology

AIP Advances ◽  
2015 ◽  
Vol 5 (8) ◽  
pp. 087134 ◽  
Author(s):  
Tom Yager ◽  
Arseniy Lartsev ◽  
Karin Cedergren ◽  
Rositsa Yakimova ◽  
Vishal Panchal ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Epitaxial Graphene ◽  
Quantum Metrology ◽  
Graphene Devices

Reducing Contact Resistance in Graphene Devices through Contact Area Patterning

ACS Nano ◽  
2013 ◽  
Vol 7 (4) ◽  
pp. 3661-3667 ◽  
Author(s):  
Joshua T. Smith ◽  
Aaron D. Franklin ◽  
Damon B. Farmer ◽  
Christos D. Dimitrakopoulos
Keyword(s):  
Contact Resistance ◽  
Contact Area ◽  
Graphene Devices
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