scholarly journals Low contact resistance in epitaxial graphene devices for quantum metrology

AIP Advances ◽  
2015 ◽  
Vol 5 (8) ◽  
pp. 087134 ◽  
Author(s):  
Tom Yager ◽  
Arseniy Lartsev ◽  
Karin Cedergren ◽  
Rositsa Yakimova ◽  
Vishal Panchal ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Epitaxial Graphene ◽  
Quantum Metrology ◽  
Graphene Devices

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

2015 ◽  
Vol 32 (11) ◽  
pp. 117204 ◽  
Author(s):  
Ze-Zhao He ◽  
Ke-Wu Yang ◽  
Cui Yu ◽  
Jia Li ◽  
Qing-Bin Liu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Epitaxial Graphene ◽  
Graphene Devices

scholarly journals Influence of Humidity on Contact Resistance in Graphene Devices

2018 ◽  
Vol 10 (48) ◽  
pp. 41738-41746 ◽  
Author(s):  
Arne Quellmalz ◽  
Anderson D. Smith ◽  
Karim Elgammal ◽  
Xuge Fan ◽  
Anna Delin ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Graphene Devices

Graphene Nano-Biosensors for Detection of Cancer Risk

2012 ◽  
Vol 711 ◽  
pp. 246-252 ◽  
Author(s):  
Owen J. Guy ◽  
Gregory Burwell ◽  
Zari Tehrani ◽  
Ambroise Castaing ◽  
Kelly Ann Walker ◽  
...  
Keyword(s):  
High Vacuum ◽  
Epitaxial Graphene ◽  
Electrical Signal ◽  
Early Detection Of Disease ◽  
Disease Biomarkers ◽  
Sensing Applications ◽  
Highly Sensitive ◽  
Surface Functionalisation ◽  
Graphene Devices ◽  
Modified Graphene

Biosensor diagnostics based on bio-functionalized semiconductor devices are an important development in ultrasensitive sensors for early detection of disease biomarkers. Electrochemical devices using chemically modified graphene (CMG) channels are excellent candidates for nanobiosensors. This paper presents the development of novel antibody functionalized epitaxial graphene devices for bio-sensing applications. Epitaxial graphene has been grown on silicon carbide (SiC) substrates under high vacuum and high temperature conditions (1200 – 1700°C). A generic electrochemical surface functionalisation chemistry, which can be used to attach a variety of “bio-receptors” to graphitic surfaces, has been developed. The attached bio-receptors are capable of specific and selective interaction with disease biomarkers. When a target biomarker molecule interacts with the “bio-receptor” functionalized surface, the charge density at that surface is affected. This change can be detected as an electrical signal from the biosensor, enabling highly sensitive (nM) detection of biomarker analytes. This paper reports the fabrication of graphene channel sensors for detection of disease biomarkers.

Low-Contact-Resistance Contacts to Graphene via Metal-Mediated Etching

2013 ◽  
Vol 1553 ◽  
Author(s):  
Wei Sun Leong ◽  
John T.L. Thong
Keyword(s):  
Contact Resistance ◽  
Promising Method ◽  
Pristine Graphene ◽  
Cmos Process ◽  
Metal Contacts ◽  
Ambient Conditions ◽  
Etching Technique ◽  
Graphene Devices

ABSTRACTThe theoretically-predicted enhancement of metal-graphene contacts using the “end-contacted” configuration is studied. Graphene edges at the source/drain regions are created via a CMOS process compatible metal-assisted etching technique. The on-resistance of a graphene device with cobalt-etched-graphene contacts shows 6 times improvement compared to pristine graphene device. Apart from that, four-point contacted graphene devices with nickel-etched-graphene contacts were fabricated and tested under ambient conditions. The proposed graphene devices exhibit contact resistance as low as 14 Ωμm, with an average of 90 Ωμm. Thus, forming metal-etched-graphene contacts is a promising method to obtain low-contact resistance metal contacts to graphene.

scholarly journals High mobility epitaxial graphene devices via aqueous-ozone processing

2015 ◽  
Vol 106 (6) ◽  
pp. 063503 ◽  
Author(s):  
Tom Yager ◽  
Matthew J. Webb ◽  
Helena Grennberg ◽  
Rositsa Yakimova ◽  
Samuel Lara-Avila ◽  
...  
Keyword(s):  
High Mobility ◽  
Epitaxial Graphene ◽  
Graphene Devices

Gated Epitaxial Graphene Devices

2012 ◽  
Vol 717-720 ◽  
pp. 675-678
Author(s):  
Daniel Waldmann ◽  
Johannes Jobst ◽  
Florian Speck ◽  
Thomas Seyller ◽  
Michael Krieger ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Doping Concentration ◽  
Control Experiment ◽  
Uv Light ◽  
Epitaxial Graphene ◽  
Gate Operation ◽  
Uv Illumination ◽  
Gate Structure ◽  
Graphene Devices ◽  
Bottom Gate

A bottom gate scheme is presented to tune the charge density of epitaxial graphene via a gate voltage while leaving the surface open for further manipulation or investigation. Depending on the doping concentration of the buried gate layer, the temperature and illumination, the bottom gate structure can be operated in two regimes with distinct capacitances. A model is proposed, which quantitatively describes the gate operation. The model is verified by a control experiment with an illuminated gate structure using UV light. Using UV illumination the Schottky capacitor (SC) regime, which provides improved gate efficiency, can be used even at low temperatures.

scholarly journals Low Carrier Density Epitaxial Graphene Devices On SiC

Small ◽  
2014 ◽  
Vol 11 (1) ◽  
pp. 90-95 ◽  
Author(s):  
Yanfei Yang ◽  
Lung-I. Huang ◽  
Yasuhiro Fukuyama ◽  
Fan-Hung Liu ◽  
Mariano A. Real ◽  
...  
Keyword(s):  
Carrier Density ◽  
Epitaxial Graphene ◽  
Graphene Devices

Contact resistance in few and multilayer graphene devices

2010 ◽  
Vol 96 (1) ◽  
pp. 013512 ◽  
Author(s):  
A. Venugopal ◽  
L. Colombo ◽  
E. M. Vogel
Keyword(s):  
Contact Resistance ◽  
Multilayer Graphene ◽  
Graphene Devices

scholarly journals Contact Resistance Induced Variability in Graphene Field Effect Transistors

2021 ◽  
Vol 13 (1) ◽  
pp. 153-163
Author(s):  
S. Behera ◽  
S. R. Pattanaik ◽  
G. Dash
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
High Performance ◽  
Semiconductor Device ◽  
Field Effect Transistors ◽  
Simulation Method ◽  
Process Variability ◽  
Graphene Field Effect Transistor ◽  
Dual Gate ◽  
Graphene Devices

The success of the graphene field-effect transistor (GFET) is primarily based on solving the problems associated with the growth and transfer of high-quality graphene, the deposition of dielectrics and contact resistance. The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. This is because process variability is inherent in semiconductor device manufacturing. Two units, even manufactured in the same batch, never show identical characteristics. Therefore, it is imperative that the effect of variability be studied with a view to obtain equivalent performance from similar devices. In this study, we undertake the variability of source and drain contact resistances and their effects on the performance of GFET. For this we have used a simulation method developed by us. The results show that the DC characteristics of GFET are highly dependent on the channel resistance. Also the ambipolar characteristics are strongly affected by the variation of source and drain resistances. We have captured their impact on the output as well as transfer characteristics of a dual gate GFET.

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