Reducing Contact Resistance in Graphene Devices through Contact Area Patterning

ACS Nano ◽  
2013 ◽  
Vol 7 (4) ◽  
pp. 3661-3667 ◽  
Author(s):  
Joshua T. Smith ◽  
Aaron D. Franklin ◽  
Damon B. Farmer ◽  
Christos D. Dimitrakopoulos
Keyword(s):  
Contact Resistance ◽  
Contact Area ◽  
Graphene Devices

scholarly journals Influence of Humidity on Contact Resistance in Graphene Devices

2018 ◽  
Vol 10 (48) ◽  
pp. 41738-41746 ◽  
Author(s):  
Arne Quellmalz ◽  
Anderson D. Smith ◽  
Karim Elgammal ◽  
Xuge Fan ◽  
Anna Delin ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Graphene Devices

Ni-Al-Ti Ohmic Contacts with Preserved Form Factor and Few 10- 4 Ωcm2 Specific Resistance on 0.1-1 Ωcm p-Type 4H-SiC

2018 ◽  
Vol 924 ◽  
pp. 385-388 ◽  
Author(s):  
Roberta Nipoti ◽  
Maurizio Puzzanghera ◽  
Maria Concetta Canino ◽  
Giovanna Sozzi ◽  
Paolo Fedeli
Keyword(s):  
Form Factor ◽  
Contact Resistance ◽  
Contact Area ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Specific Resistance ◽  
Thickness Ratio ◽  
Specific Contact Resistance ◽  
Specific Contact ◽  
P Type

This study shows that a thin Ni film on Al/Ti/4H-SiC metal pads allows to preserve the pad form factor during a 1000 °C/2 min treatment, provided that the Al and Ti film thicknesses are sufficiently thin. Moreover, by reducing the Al to Ti thickness ratio, droplet formation in the contact area is avoided and a mirror-like appearance is obtained. This optimal contact morphology corresponds to a specific contact resistance of few 10-4Ωcm2at room temperature on p-type 4H-SiC with resistivity in the range 0.1 – 1 Ωcm.

scholarly journals Resistive-nanoindentation: contact area monitoring by real-time electrical contact resistance measurement

2019 ◽  
Vol 9 (3) ◽  
pp. 1008-1014 ◽  
Author(s):  
Solène Comby-Dassonneville ◽  
Fabien Volpi ◽  
Guillaume Parry ◽  
Didier Pellerin ◽  
Marc Verdier
Keyword(s):  
Contact Resistance ◽  
Real Time ◽  
Contact Area ◽  
Electrical Contact ◽  
Resistance Measurement ◽  
Electrical Contact Resistance ◽  
Image Position ◽  
Area Monitoring

Abstract

Experimental and Simulation Studies of Thermal Distribution on Modified Connector of Li-Ion Battery for Electric Vehicles Application

2016 ◽  
Vol 6 (5) ◽  
pp. 2064
Author(s):  
Agus Risdiyanto ◽  
Umar Khayam ◽  
Noviadi A. Rachman ◽  
Maulana Arifin
Keyword(s):  
Contact Resistance ◽  
Contact Area ◽  
Fire Hazard ◽  
Lithium Ion ◽  
Maximum Temperature ◽  
Silver Coating ◽  
Li Ion Battery ◽  
Steady State Condition ◽  
Li Ion ◽  
Dc Current

<p>One of the several failure cases in electric vehicle could be occured at the Lithium-ion (Li-ion) battery connectors when loaded by high current. This failure caused by bad contact of connectors so that the contact resistance increase and lead to high power losses, overheating, and it can even cause a fire hazard. This paper presents a thermal distributions of  Li-ion battery connectors on different coating material in relation to the value of contact resistance. There were two test samples of modeled: copper connection without coating and copper connection with silver coating. Each sample was loaded by the DC current of 350A, and temperature at the connection was measured until steady state condition reached and simulated by Solidwork software. The results show that the temperature at the inside contact area was higher than the outside contact area of connection that appears caused by higher of the contact resistance. Both measurement and simulation results have same tendency that copper connection with silver coating having lower contact resistance, lower maximum temperature, and lower losses about 32 % than copper connection without  coating. Silver coating can be considered as other alternative to prevent overheating, high losses, and failure in Li-ion battery connector.</p>

Thermal Contact Resistance at a Metal Foam-Solid Surface Interface

2011 ◽  
Author(s):  
Ehsan Sadeghi ◽  
Scott Hsieh ◽  
Majid Bahrami
Keyword(s):  
Thermal Conductivity ◽  
Contact Resistance ◽  
Effective Thermal Conductivity ◽  
Contact Area ◽  
Thermal Contact Resistance ◽  
Thermal Contact ◽  
Metal Foams ◽  
Real Contact Area ◽  
The Real ◽  
Real Contact

Accurate information on heat transfer and temperature distribution in metal foams is necessary for design and modeling of thermal-hydraulic systems incorporating metal foams. The analysis of this process requires determination of the effective thermal conductivity as well as the thermal contact resistance (TCR) associated with the interface between the metal foams and adjacent surfaces/layers. In the present study, a test bed that allows the separation of effective thermal conductivity and thermal contact resistance in metal foams is described. Measurements are performed in a vacuum under varying compressive loads using ERG Duocel aluminum foam samples with different porosities and pore densities. Also, a graphical method associated with a computer code is developed to demonstrate the distribution of contact spots and estimate the real contact area at the interface. Our results show that the porosity and the effective thermal conductivity remain unchanged with the variation of compression in the range of 0 to 2 MPa; but TCR decreases significantly with pressure due to an increase in the real contact area at the interface. Moreover, the ratio of real to nominal contact area varies between 0 to 0.013, depending upon the compressive force, porosity, and surface characteristics.

scholarly journals Characterization of the Resistance and Force of a Carbon Nanotube/Metal Side Contact by Nanomanipulation

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-11 ◽  
Author(s):  
Ning Yu ◽  
Masahiro Nakajima ◽  
Qing Shi ◽  
Zhan Yang ◽  
Huaping Wang ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Contact Force ◽  
Contact Area ◽  
Field Effect Transistors ◽  
Influence Factors ◽  
Contact Length ◽  
Before And After ◽  
Negative Exponential ◽  
Good Agreement

A high contact resistance restricts the application of carbon nanotubes (CNTs) in fabrication of field-effect transistors (FETs). Thus, it is important to decrease the contact resistance and investigate the critical influence factors such as the contact length and contact force. This study uses nanomanipulation to characterize both the resistance and the force at a CNT/Au side-contact interface inside a scanning electron microscopy (SEM). Two-terminal CNT manipulation methods, and models for calculating the resistance and force at contact area, are proposed to guide the measurement experiments of a total resistance and a cantilever’s elastic deformation. The experimental results suggest that the contact resistance of CNT/Au interface is large (189.5 kΩ) when the van der Waals force (282.1 nN) dominates the contact force at the interface. Electron-beam-induced deposition (EBID) is then carried out to decrease the contact resistance. After depositing seven EBID points, the resistance is decreased to 7.5 kΩ, and the force increases to 1339.8 nN at least. The resistance and force at the contact area where CNT was fixed exhibit a negative exponential correlation before and after EBID. The good agreement of this correlation with previous reports validates the proposed robotic system and methods for characterizing the contact resistance and force.

Low-Contact-Resistance Contacts to Graphene via Metal-Mediated Etching

2013 ◽  
Vol 1553 ◽  
Author(s):  
Wei Sun Leong ◽  
John T.L. Thong
Keyword(s):  
Contact Resistance ◽  
Promising Method ◽  
Pristine Graphene ◽  
Cmos Process ◽  
Metal Contacts ◽  
Ambient Conditions ◽  
Etching Technique ◽  
Graphene Devices

ABSTRACTThe theoretically-predicted enhancement of metal-graphene contacts using the “end-contacted” configuration is studied. Graphene edges at the source/drain regions are created via a CMOS process compatible metal-assisted etching technique. The on-resistance of a graphene device with cobalt-etched-graphene contacts shows 6 times improvement compared to pristine graphene device. Apart from that, four-point contacted graphene devices with nickel-etched-graphene contacts were fabricated and tested under ambient conditions. The proposed graphene devices exhibit contact resistance as low as 14 Ωμm, with an average of 90 Ωμm. Thus, forming metal-etched-graphene contacts is a promising method to obtain low-contact resistance metal contacts to graphene.

Electrical Contact Resistance Estimation With Application to Electric Vehicle Charging Cable

2017 ◽  
Vol 140 (4) ◽  
Author(s):  
Jocelyn Sabatier ◽  
Mathieu Chevrié ◽  
Christophe Farges ◽  
Franck Guillemard ◽  
Laetitia Pradere
Keyword(s):  
Contact Resistance ◽  
Electric Vehicle ◽  
Contact Area ◽  
Electrical Contact ◽  
Heat Rate ◽  
Least Square Method ◽  
Total Heat ◽  
Least Square ◽  
Electrical Contact Resistance ◽  
Charging Infrastructure

The paper proposes a method to estimate the contact resistance inside the outlet between a charging cable and an electric vehicle. First, an electrothermal model of some components close to the contact area inside the vehicle outlet (in the female part of the outlet) and of the harness inside the vehicle is proposed. The charging cable and the associated components are the male parts of the outlet and are not modeled as these components are not identical for each charging. They also depend on the mode and the charging infrastructure used. It is only supposed that the charging cable evacuates an unknown thermal heat rate. A linear approximation of the electrothermal model is then obtained and used to design a closed-loop estimator of the total heat rate at the contact area. Using this information, a least square method is used to estimate the contact resistance that can be deduced from the first values of the total heat rate after a step variation of the current in the charging cable.

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

2015 ◽  
Vol 32 (11) ◽  
pp. 117204 ◽  
Author(s):  
Ze-Zhao He ◽  
Ke-Wu Yang ◽  
Cui Yu ◽  
Jia Li ◽  
Qing-Bin Liu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Epitaxial Graphene ◽  
Graphene Devices

Electrical Characterization of Ion Imiplanted, Thermally Annealed TiN Films Acting as Diffusion Barriers on Shallow Junction Silicon Devices

1985 ◽  
Vol 45 ◽  
Author(s):  
A. Armigliato ◽  
M. Finetti ◽  
E. Gabilli ◽  
S. Guerri ◽  
P. Ostoja ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Contact Area ◽  
Electrical Characterization ◽  
Diffusion Barriers ◽  
Contact Structures ◽  
Thermal Treatments ◽  
Tin Films ◽  
Shallow Junction ◽  
Silicon Devices

ABSTRACTTiN films prepared by implantation onto evaporated Ti layers are tested as diffusion barriers in contact with a thick Al overlayer. Both the TiN/Al and TiSi2/TiN/Al contact structures are evaluated, after thermal treatments up to 600 C, on shallow junction diodes and four terminal resistor test patterns for contact resistance measurements. It is shown that, upon annealing at 600 C, the TiSi2/TiN/Al contact system still exhibits excellent electrical performances. The degradation is found to depend on TiSi2 thickness and contact area.

Sign in / Sign up

Export Citation Format

Share Document