Reduction of metal contact resistance of graphene devices via CO2 cluster cleaning

2014 ◽  
Vol 104 (22) ◽  
pp. 223110 ◽  
Author(s):  
Sarang Gahng ◽  
Chang Ho Ra ◽  
Yu Jin Cho ◽  
Jang Ah Kim ◽  
Taesung Kim ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Metal Contact ◽  
Graphene Devices

scholarly journals Influence of Humidity on Contact Resistance in Graphene Devices

2018 ◽  
Vol 10 (48) ◽  
pp. 41738-41746 ◽  
Author(s):  
Arne Quellmalz ◽  
Anderson D. Smith ◽  
Karim Elgammal ◽  
Xuge Fan ◽  
Anna Delin ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Graphene Devices

Contact resistance improvement by dielectric breakdown in semiconductor-dielectric-metal contact

2013 ◽  
Vol 102 (11) ◽  
pp. 113505 ◽  
Author(s):  
Kausik Majumdar ◽  
Chris Hobbs ◽  
Ken Matthews ◽  
Chien-Hao Chen ◽  
Tat Ngai ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Dielectric Breakdown ◽  
Metal Contact ◽  
Resistance Improvement

Low-Contact-Resistance Contacts to Graphene via Metal-Mediated Etching

2013 ◽  
Vol 1553 ◽  
Author(s):  
Wei Sun Leong ◽  
John T.L. Thong
Keyword(s):  
Contact Resistance ◽  
Promising Method ◽  
Pristine Graphene ◽  
Cmos Process ◽  
Metal Contacts ◽  
Ambient Conditions ◽  
Etching Technique ◽  
Graphene Devices

ABSTRACTThe theoretically-predicted enhancement of metal-graphene contacts using the “end-contacted” configuration is studied. Graphene edges at the source/drain regions are created via a CMOS process compatible metal-assisted etching technique. The on-resistance of a graphene device with cobalt-etched-graphene contacts shows 6 times improvement compared to pristine graphene device. Apart from that, four-point contacted graphene devices with nickel-etched-graphene contacts were fabricated and tested under ambient conditions. The proposed graphene devices exhibit contact resistance as low as 14 Ωμm, with an average of 90 Ωμm. Thus, forming metal-etched-graphene contacts is a promising method to obtain low-contact resistance metal contacts to graphene.

Development of an Experimental Procedure for Thermal Contact Resistance Estimation at the Glass/Metal Contact Interface

2013 ◽  
Vol 6 (2) ◽  
Author(s):  
B. Abdulhay ◽  
B. Bourouga ◽  
F. Alzetto ◽  
C. Challita
Keyword(s):  
Heat Flux ◽  
Contact Resistance ◽  
Thermal Contact Resistance ◽  
Thermal Contact ◽  
Thermal Conditions ◽  
Metal Contact ◽  
Contact Interface ◽  
Equivalent Thermal Conductivity ◽  
Experimental Procedure ◽  
Glass Metal

In this paper, an experimental device is designed and developed in order to estimate thermal conditions at the glass/metal contact interface. This device is made of two parts: The upper part contains the tool (piston) made of bronze and a heating device to raise the temperature of the piston to 700 °C. The lower part is composed of a lead crucible and a glass sample. The assembly is provided with a heating system, an induction furnace of 6 kW for heating the glass up to 950 °C. The developed experimental procedure has permitted the estimation of the thermal contact resistance (TCR) using a developed measurement principle based on the inverse technique developed by Beck et al. (1985, Inverse Heat Conduction: III Posed Problems, Wiley Inter-science, New York). The semitransparent character of the glass has been taken into account by an additional radiative heat flux and an equivalent thermal conductivity. After the set-up tests, reproducibility experiments for a specific contact pressure have been carried out. Results show a good repeatability of the registered and estimated parameters such as the piston surface temperature, heat flux density, and TCR. The estimated value of TCR reaches 2 × 10−3 K m2/W with a maximum dispersion that does not exceed 6%.

Improvement of graphene–metal contact resistance by introducing edge contacts at graphene under metal

2014 ◽  
Vol 104 (18) ◽  
pp. 183506 ◽  
Author(s):  
Seung Min Song ◽  
Taek Yong Kim ◽  
One Jae Sul ◽  
Woo Cheol Shin ◽  
Byung Jin Cho
Keyword(s):  
Contact Resistance ◽  
Metal Contact

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

2015 ◽  
Vol 32 (11) ◽  
pp. 117204 ◽  
Author(s):  
Ze-Zhao He ◽  
Ke-Wu Yang ◽  
Cui Yu ◽  
Jia Li ◽  
Qing-Bin Liu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Epitaxial Graphene ◽  
Graphene Devices

Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer

2007 ◽  
Vol 17 (01) ◽  
pp. 85-89 ◽  
Author(s):  
Yunju Sun ◽  
Lester F. Eastman
Keyword(s):  
Contact Resistance ◽  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistor ◽  
Metal Contact ◽  
High Electron ◽  
Transfer Resistance ◽  
High Electron Mobility ◽  
Hemt Structure ◽  
Gan Hemts

A significant improvement of contact transfer resistance on undoped GaN/AlGaN/AlN (10 Å)/ GaN high electron mobility transistor (HEMT) structure was demonstrated using a Ta/Ti/Al/Mo/Au metallization scheme compared to a Ti/Al/Mo/Au metallization scheme. A contact resistance as low as 0.16 ± 0.03 ohm - mm was achieved by rapid thermal annealing of evaporated Ta (125 Å)/ Ti (150 Å)/ Al (900 Å)/ Mo (400 Å)/ Au (500 Å) metal contact at 700 °C for 1 min followed by 800 °C for 30 sec in a N 2 ambient. An excellent edge acuity was also demonstrated for the annealed Ta/Ti/Al/Mo/Au ohmic contacts.

Contact resistance in few and multilayer graphene devices

2010 ◽  
Vol 96 (1) ◽  
pp. 013512 ◽  
Author(s):  
A. Venugopal ◽  
L. Colombo ◽  
E. M. Vogel
Keyword(s):  
Contact Resistance ◽  
Multilayer Graphene ◽  
Graphene Devices

scholarly journals Contact Resistance Induced Variability in Graphene Field Effect Transistors

2021 ◽  
Vol 13 (1) ◽  
pp. 153-163
Author(s):  
S. Behera ◽  
S. R. Pattanaik ◽  
G. Dash
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
High Performance ◽  
Semiconductor Device ◽  
Field Effect Transistors ◽  
Simulation Method ◽  
Process Variability ◽  
Graphene Field Effect Transistor ◽  
Dual Gate ◽  
Graphene Devices

The success of the graphene field-effect transistor (GFET) is primarily based on solving the problems associated with the growth and transfer of high-quality graphene, the deposition of dielectrics and contact resistance. The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. This is because process variability is inherent in semiconductor device manufacturing. Two units, even manufactured in the same batch, never show identical characteristics. Therefore, it is imperative that the effect of variability be studied with a view to obtain equivalent performance from similar devices. In this study, we undertake the variability of source and drain contact resistances and their effects on the performance of GFET. For this we have used a simulation method developed by us. The results show that the DC characteristics of GFET are highly dependent on the channel resistance. Also the ambipolar characteristics are strongly affected by the variation of source and drain resistances. We have captured their impact on the output as well as transfer characteristics of a dual gate GFET.

A Silicon - Metal Contact Resistance

Nature ◽  
1947 ◽  
Vol 160 (4073) ◽  
pp. 710-711 ◽  
Author(s):  
E. H. PUTLEY
Keyword(s):  
Contact Resistance ◽  
Metal Contact
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