Pulsed‐electron‐beam annealing of ion‐implantation damage

1979 ◽  
Vol 50 (2) ◽  
pp. 783-787 ◽  
Author(s):  
A. C. Greenwald ◽  
A. R. Kirkpatrick ◽  
R. G. Little ◽  
J. A. Minnucci
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Pulsed Electron Beam ◽  
Implantation Damage

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

Pulsed electron beam annealing: A tool for post-implantation damage control in SiC

2006 ◽  
Vol 132 ◽  
pp. 215-219 ◽  
Author(s):  
D. J. Brink ◽  
H. W. Kunert ◽  
J. B. Malherbe ◽  
J. Camassel
Keyword(s):  
Electron Beam ◽  
Damage Control ◽  
Pulsed Electron Beam ◽  
Implantation Damage ◽  
Post Implantation

The effects of ion implantation and pulsed electron beam anneal on Ge films grown epitaxially on ◃100▹ GaAs

1980 ◽  
Vol 9 (3) ◽  
pp. 685-692 ◽  
Author(s):  
W. Tseng ◽  
H. Dietrich ◽  
J. Davey ◽  
A. Christou ◽  
W. T. Anderson
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Pulsed Electron Beam

scholarly journals PULSED ELECTRON BEAM ANNEALING OF ARSENIC-IMPLANTATION DAMAGE IN SILICON

1982 ◽  
Vol 43 (C5) ◽  
pp. C5-411-C5-420 ◽  
Author(s):  
D. Barbier ◽  
A. Laugier ◽  
A. Cachard
Keyword(s):  
Electron Beam ◽  
Pulsed Electron Beam ◽  
Implantation Damage
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