Supersaturated Si-As alloy formation by ion implantation and pulsed electron beam annealing

1982 ◽  
Vol 28 (2) ◽  
pp. 99-102 ◽  
Author(s):  
A. Turos ◽  
O. Meyer ◽  
J. Geerk
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Alloy Formation ◽  
Pulsed Electron Beam

Surface-alloy formation in film–substrate melting by intense pulsed electron beam. Part 2

2015 ◽  
Vol 45 (10) ◽  
pp. 754-758 ◽  
Author(s):  
Yu. F. Ivanov ◽  
Yu. A. Denisova ◽  
A. D. Teresov ◽  
O. V. Krysina
Keyword(s):  
Electron Beam ◽  
Surface Alloy ◽  
Alloy Formation ◽  
Pulsed Electron Beam ◽  
Substrate Melting ◽  
Film Substrate

Surface-alloy formation in film–substrate melting by intense pulsed electron beam. Part 1

2015 ◽  
Vol 45 (8) ◽  
pp. 559-563
Author(s):  
Yu. F. Ivanov ◽  
Yu. A. Denisova ◽  
A. D. Teresov ◽  
O. V. Krysina
Keyword(s):  
Electron Beam ◽  
Surface Alloy ◽  
Alloy Formation ◽  
Pulsed Electron Beam ◽  
Substrate Melting ◽  
Film Substrate

The effects of ion implantation and pulsed electron beam anneal on Ge films grown epitaxially on ◃100▹ GaAs

1980 ◽  
Vol 9 (3) ◽  
pp. 685-692 ◽  
Author(s):  
W. Tseng ◽  
H. Dietrich ◽  
J. Davey ◽  
A. Christou ◽  
W. T. Anderson
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Pulsed Electron Beam

Metastable Alloy Formation in Electron Beam Pulsed Al and Si

1980 ◽  
Vol 1 ◽  
Author(s):  
S. T. Picraux ◽  
D. M. Follstaedt ◽  
J. A. Knapp ◽  
W. R. Wampler ◽  
E. Rimini
Keyword(s):  
Electron Beam ◽  
Surface Segregation ◽  
Interface Velocity ◽  
Distribution Coefficients ◽  
Alloy Formation ◽  
Pulsed Electron Beam ◽  
Polycrystalline Layer ◽  
Order Of Magnitude ◽  
Metastable Alloys ◽  
Ion Backscattering

ABSTRACTThe formation of metastable alloys by pulsed electron beam annealing of Al implanted with Sn or Ni and of Si implanted with Sn has been studied by TEM, ion backscattering and channeling. Surface segregation after pulsed melting is observed in Si but not in Al, even though all impurities have similar equilibrium distribution coefficients of∼10-2. This difference is attributed to the higher liquid-solid interface velocity and lower diffusivities in Al. Metastable substitutional solutions more than an order of magnitude above equilibrium solubilities are obtained for Ni and Sn in Al. At Ni concentrations ∼ 5 at.% a highly disordered transformation zone is formed in Al and a new phenomenon in which a polycrystalline layer forms on epitaxially regrown Al is observed.

Pulsed‐electron‐beam annealing of ion‐implantation damage

1979 ◽  
Vol 50 (2) ◽  
pp. 783-787 ◽  
Author(s):  
A. C. Greenwald ◽  
A. R. Kirkpatrick ◽  
R. G. Little ◽  
J. A. Minnucci
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Pulsed Electron Beam ◽  
Implantation Damage
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