Electron‐beam annealing of ion‐implantation damage in integrated‐circuit devices

1979 ◽  
Vol 50 (3) ◽  
pp. 1308-1311 ◽  
Author(s):  
T. I. Kamins ◽  
P. H. Rose
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Integrated Circuit ◽  
Implantation Damage

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

Analysis of Ion Implantation Damage in Silicon Wafers by a Contactless Microwave Diagnostic

2001 ◽  
Vol 699 ◽  
Author(s):  
Richard K. Ahrenkiel ◽  
B. Lojek
Keyword(s):  
Ion Implantation ◽  
Integrated Circuit ◽  
Low Frequency ◽  
Optical Excitation ◽  
Minority Carrier Lifetime ◽  
Heavy Ion ◽  
Silicon Wafers ◽  
Contactless Measurement ◽  
Implantation Damage ◽  
Probe Frequency

AbstractRapid thermal annealing (RTA) of lattice damage created by heavy ion implantation damage is required to maintain the integrity of semiconductor material used for submicron-integrated circuit devices. A quick, efficient, and contactless diagnostic of the implantation damage is highly desirable in both research and production environments. A contactless measurement technique has been recently applied to this problem that uses a deeply penetrating low-frequency microwave probe frequency operating at 420 MHz. Here, we will demonstrate the use of this high frequency resonance-coupled photoconductive decay (RCPCD) technique, which, when combined with a tunable optical excitation source, enables us to map the radiation damage in boron and arsenic-implanted silicon wafers. We quantify the damage by mapping the minority-carrier lifetime as a function of optical penetration depth. In this work, we quickly and efficiently compared the effectiveness of various RTA processes by the RCPCD diagnostic.

Pulsed‐electron‐beam annealing of ion‐implantation damage

1979 ◽  
Vol 50 (2) ◽  
pp. 783-787 ◽  
Author(s):  
A. C. Greenwald ◽  
A. R. Kirkpatrick ◽  
R. G. Little ◽  
J. A. Minnucci
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Pulsed Electron Beam ◽  
Implantation Damage

Charging dynamics of integrated circuit passivation layer probe holes in the electron beam tester

1994 ◽  
Vol 65 (26) ◽  
pp. 3341-3343 ◽  
Author(s):  
J. C. H. Phang ◽  
K. S. Sim ◽  
D. S. H. Chan
Keyword(s):  
Electron Beam ◽  
Integrated Circuit ◽  
Passivation Layer ◽  
Charging Dynamics
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