The effects of ion implantation and pulsed electron beam anneal on Ge films grown epitaxially on ◃100▹ GaAs
1980 ◽
Vol 9
(3)
◽
pp. 685-692
◽
1982 ◽
Vol 28
(2)
◽
pp. 99-102
◽
1991 ◽
Vol 1-2
◽
pp. 343-359
◽
1980 ◽
Vol 41
(C9)
◽
pp. C9-287-C9-291
◽
Keyword(s):
2012 ◽
Vol 132
(11)
◽
pp. 951-957