Predicting the lifetime of copper/barrier/dielectric systems: Insights for designing better barriers for reducing copper ion drift/diffusion into the dielectric

2009 ◽  
Vol 106 (7) ◽  
pp. 074906 ◽  
Author(s):  
Ravi S. Achanta ◽  
William N. Gill ◽  
Joel L. Plawsky
Keyword(s):  
Copper Ion ◽  
Drift Diffusion ◽  
Ion Drift

scholarly journals Nonlinear ion drift-diffusion memristance description of TiO2 RRAM devices

2020 ◽  
Vol 2 (6) ◽  
pp. 2514-2524
Author(s):  
Sahar Alialy ◽  
Koorosh Esteki ◽  
Mauro S. Ferreira ◽  
John J. Boland ◽  
Claudia Gomes da Rocha
Keyword(s):  
Drift Diffusion ◽  
Ion Drift ◽  
And Performance ◽  
Device Operation

The nature and direction of the hysteresis in memristive devices is critical to device operation and performance and the ability to realise their potential in neuromorphic applications.

Copper Ion Drift Rates in Porous Methylsilsesquiazane Dielectric Films

2000 ◽  
Author(s):  
S. Mukaigawa ◽  
T. Oda ◽  
T. Aoki ◽  
Y. Shimizu ◽  
T. Kikkawa
Keyword(s):  
Copper Ion ◽  
Dielectric Films ◽  
Ion Drift

scholarly journals Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion—Part II: Compact Modeling

2019 ◽  
Vol 66 (9) ◽  
pp. 3802-3808 ◽  
Author(s):  
Wei Wang ◽  
Mario Laudato ◽  
Elia Ambrosi ◽  
Alessandro Bricalli ◽  
Erika Covi ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Compact Modeling ◽  
Drift Diffusion ◽  
Resistive Switching Memory ◽  
Ion Drift ◽  
Switching Memory

scholarly journals Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling

2019 ◽  
Vol 66 (9) ◽  
pp. 3795-3801 ◽  
Author(s):  
Wei Wang ◽  
Mario Laudato ◽  
Elia Ambrosi ◽  
Alessandro Bricalli ◽  
Erika Covi ◽  
...  
Keyword(s):  
Numerical Modeling ◽  
Resistive Switching ◽  
Drift Diffusion ◽  
Resistive Switching Memory ◽  
Ion Drift ◽  
Switching Memory

Evaluation of Copper Ion Drift in Low-Dielectric-Constant Interlayer Films by Transient Capacitance Spectroscopy

2003 ◽  
Vol 766 ◽  
Author(s):  
Takenobu Yoshino ◽  
Nobuhiro Hata ◽  
Takamaro Kikkawa
Keyword(s):  
Dielectric Constant ◽  
Thermal Emission ◽  
Copper Ion ◽  
Electronic States ◽  
Copper Electrode ◽  
Conduction Band Edge ◽  
Low Dielectric Constant ◽  
Ion Drift ◽  
Low Dielectric ◽  
Transient Capacitance

AbstractThe evidence of copper (Cu) ion drift in low-dielectric-constant (low-k) interlayer films is clearly shown by transient capacitance measurements for the first time. The bias-temperaturestress (BTS) was applied to the copper electrode of Cu/low-k/p-Si metal-insulator-semiconductor capacitors. After injecting photoelectrons into the low-k film from the substrate, time-dependence of the capacitance was measured. When BTS-applied samples were measured, a decrement of the capacitance was observed, whereas not observed without BTS. The decrement of the capacitance was attributed to thermal emission of electrons from copper-related electronic states. By assuming an attempt-to-escape frequency of the charge from the electronic states, the energy level of Cu was estimated to be 0.8–0.9 eV below the conduction band edge.

Copper–oxygen Dynamics in Tyrosinase

2019 ◽  
Author(s):  
Nobutaka Fujieda ◽  
Sachiko Yanagisawa ◽  
Minoru Kubo ◽  
Genji Kurisu ◽  
Shinobu Itoh
Keyword(s):  
Catalytic Mechanism ◽  
Substrate Binding ◽  
Active Form ◽  
Copper Ion ◽  
Atomic Resolution ◽  
Oxygen Species ◽  
X Ray ◽  
Oxygen Dynamics ◽  
Insight Into ◽  
Copper Centre

To unveil the activation of dioxygen on the copper centre (Cu<sub>2</sub>O<sub>2</sub>core) of tyrosinase, we performed X-ray crystallograpy with active-form tyrosinase at near atomic resolution. This study provided a novel insight into the catalytic mechanism of the tyrosinase, including the rearrangement of copper-oxygen species as well as the intramolecular migration of copper ion induced by substrate-binding.<br>

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