scholarly journals Nonlinear ion drift-diffusion memristance description of TiO2 RRAM devices

2020 ◽  
Vol 2 (6) ◽  
pp. 2514-2524
Author(s):  
Sahar Alialy ◽  
Koorosh Esteki ◽  
Mauro S. Ferreira ◽  
John J. Boland ◽  
Claudia Gomes da Rocha
Keyword(s):  
Drift Diffusion ◽  
Ion Drift ◽  
And Performance ◽  
Device Operation

The nature and direction of the hysteresis in memristive devices is critical to device operation and performance and the ability to realise their potential in neuromorphic applications.

scholarly journals Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 169-173
Author(s):  
J. R. Watling ◽  
Y. P. Zhao ◽  
A. Asenov ◽  
J. R. Barker
Keyword(s):  
Ballistic Transport ◽  
Deep Submicron ◽  
Hole Transport ◽  
Recent Experimental Data ◽  
Drift Diffusion ◽  
Performance Gap ◽  
Performance Potentials ◽  
Transport Effects ◽  
And Performance ◽  
Non Equilibrium

As MOSFETs are scaled to deep submicron dimensions non-equilibrium, near ballistic, transport in p-MOSFETs becomes important. Recent experimental data indicates that as MOSFETs are scaled the performance gap between n and p-channel shrinks. Nonequilibrium transport effects and performance potentials of ‘Well Tempered’ Si p- MOSFETs with gate lengths of 50 and 25 nm are studied. Monte Carlo and calibrated Drift Diffusion simulations of these devices provide a quantitative estimate of the importance and the influence of non-equilibrium transport on submicron device performance. A possible explanation for the closing performance gap between n- and p-channel MOSFETs is offered.

Bias-Dependent Peltier Coefficient in Bipolar Devices

2001 ◽  
Author(s):  
Kevin P. Pipe ◽  
Rajeev J. Ram ◽  
Ali Shakouri
Keyword(s):  
Laser Diodes ◽  
Internal Cooling ◽  
Drift Diffusion ◽  
Bipolar Devices ◽  
Microelectronic Devices ◽  
Thermal Constraints ◽  
Peltier Coefficient ◽  
Semiconductor Laser Diodes ◽  
Device Operation ◽  
Diode Current

Abstract Temperature stabilization is important in many microelectronic devices due to thermal constraints on device operation and lifetime. The work described here is an investigation of thermoelectric phenomena in bipolar devices, specifically the p-n diode. Current injection can modify the Peltier coefficient at interfaces; this can give rise to thermoelectric cooling or heating depending on device parameters. The bias-dependent Peltier coefficient is modeled using self-consistent drift-diffusion, and implications for device design are examined. The different regimes of bias for which cooling is achieved are described, as well as the effects of device length, doping, and heterojunction band offset. Extensions of the model are given for applications such as the internal cooling of semiconductor laser diodes.

scholarly journals Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion—Part II: Compact Modeling

2019 ◽  
Vol 66 (9) ◽  
pp. 3802-3808 ◽  
Author(s):  
Wei Wang ◽  
Mario Laudato ◽  
Elia Ambrosi ◽  
Alessandro Bricalli ◽  
Erika Covi ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Compact Modeling ◽  
Drift Diffusion ◽  
Resistive Switching Memory ◽  
Ion Drift ◽  
Switching Memory

scholarly journals Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling

2019 ◽  
Vol 66 (9) ◽  
pp. 3795-3801 ◽  
Author(s):  
Wei Wang ◽  
Mario Laudato ◽  
Elia Ambrosi ◽  
Alessandro Bricalli ◽  
Erika Covi ◽  
...  
Keyword(s):  
Numerical Modeling ◽  
Resistive Switching ◽  
Drift Diffusion ◽  
Resistive Switching Memory ◽  
Ion Drift ◽  
Switching Memory

Transmission Scanning Electron Microscopy and Energy Analysis with the Siemens ELMISKOP 101

1972 ◽  
Vol 30 ◽  
pp. 450-451
Author(s):  
H. M. Thieringer
Keyword(s):  
Objective Lens ◽  
Transmission Microscopy ◽  
Image Recording ◽  
Mode Of Operation ◽  
Scanning Transmission ◽  
Electron Microscopes ◽  
And Performance ◽  
Convergent Beam ◽  
Ray Path ◽  
Beam Diffraction

It has repeatedly been show that with conventional electron microscopes very fine electron probes can be produced, therefore allowing various micro-techniques such as micro recording, X-ray microanalysis and convergent beam diffraction. In this paper the function and performance of an SIEMENS ELMISKOP 101 used as a scanning transmission microscope (STEM) is described. This mode of operation has some advantages over the conventional transmission microscopy (CTEM) especially for the observation of thick specimen, in spite of somewhat longer image recording times.Fig.1 shows schematically the ray path and the additional electronics of an ELMISKOP 101 working as a STEM. With a point-cathode, and using condensor I and the objective lens as a demagnifying system, an electron probe with a half-width ob about 25 Å and a typical current of 5.10-11 amp at 100 kV can be obtained in the back focal plane of the objective lens.

Angular Resolved Electron Spectroscopy with Parallel Recording

1990 ◽  
Vol 48 (2) ◽  
pp. 370-371
Author(s):  
Huang Min ◽  
P.S. Flora ◽  
C.J. Harland ◽  
J.A. Venables
Keyword(s):  
Electron Spectroscopy ◽  
Low Voltage ◽  
Solid Angle ◽  
Detection System ◽  
Voltage Electron ◽  
Cylindrical Mirror ◽  
Inner Radius ◽  
Channel Plate ◽  
And Performance ◽  
Type Detector

A cylindrical mirror analyser (CMA) has been built with a parallel recording detection system. It is being used for angular resolved electron spectroscopy (ARES) within a SEM. The CMA has been optimised for imaging applications; the inner cylinder contains a magnetically focused and scanned, 30kV, SEM electron-optical column. The CMA has a large inner radius (50.8mm) and a large collection solid angle (Ω > 1sterad). An energy resolution (ΔE/E) of 1-2% has been achieved. The design and performance of the combination SEM/CMA instrument has been described previously and the CMA and detector system has been used for low voltage electron spectroscopy. Here we discuss the use of the CMA for ARES and present some preliminary results.The CMA has been designed for an axis-to-ring focus and uses an annular type detector. This detector consists of a channel-plate/YAG/mirror assembly which is optically coupled to either a photomultiplier for spectroscopy or a TV camera for parallel detection.

Novel epoxy/anhydride alternatives for biological electron microscopy: Physical and performance characteristis of embed 812 and LX 112 in combination with NSA/NMA/DMAE

1989 ◽  
Vol 47 ◽  
pp. 1000-1001
Author(s):  
Joe A. Mascorro ◽  
Gerald S. Kirby
Keyword(s):  
Electron Microscopy ◽  
Flow Rate ◽  
Succinic Anhydride ◽  
Volume Flow Rate ◽  
Mass Density ◽  
Uranyl Acetate ◽  
Volume Flow ◽  
Base Resin ◽  
And Performance ◽  
Acid Anhydrides

Embedding media based upon an epoxy resin of choice and the acid anhydrides dodecenyl succinic anhydride (DDSA), nadic methyl anhydride (NMA), and catalyzed by the tertiary amine 2,4,6-Tri(dimethylaminomethyl) phenol (DMP-30) are widely used in biological electron microscopy. These media possess a viscosity character that can impair tissue infiltration, particularly if original Epon 812 is utilized as the base resin. Other resins that are considerably less viscous than Epon 812 now are available as replacements. Likewise, nonenyl succinic anhydride (NSA) and dimethylaminoethanol (DMAE) are more fluid than their counterparts DDSA and DMP- 30 commonly used in earlier formulations. This work utilizes novel epoxy and anhydride combinations in order to produce embedding media with desirable flow rate and viscosity parameters that, in turn, would allow the medium to optimally infiltrate tissues. Specifically, embeding media based on EmBed 812 or LX 112 with NSA (in place of DDSA) and DMAE (replacing DMP-30), with NMA remaining constant, are formulated and offered as alternatives for routine biological work.Individual epoxy resins (Table I) or complete embedding media (Tables II-III) were tested for flow rate and viscosity. The novel media were further examined for their ability to infilftrate tissues, polymerize, sectioning and staining character, as well as strength and stability to the electron beam and column vacuum. For physical comparisons, a volume (9 ml) of either resin or media was aspirated into a capillary viscocimeter oriented vertically. The material was then allowed to flow out freely under the influence of gravity and the flow time necessary for the volume to exit was recored (Col B,C; Tables). In addition, the volume flow rate (ml flowing/second; Col D, Tables) was measured. Viscosity (n) could then be determined by using the Hagen-Poiseville relation for laminar flow, n = c.p/Q, where c = a geometric constant from an instrument calibration with water, p = mass density, and Q = volume flow rate. Mass weight and density of the materials were determined as well (Col F,G; Tables). Infiltration schedules utilized were short (1/2 hr 1:1, 3 hrs full resin), intermediate (1/2 hr 1:1, 6 hrs full resin) , or long (1/2 hr 1:1, 6 hrs full resin) in total time. Polymerization schedules ranging from 15 hrs (overnight) through 24, 36, or 48 hrs were tested. Sections demonstrating gold interference colors were collected on unsupported 200- 300 mesh grids and stained sequentially with uranyl acetate and lead citrate.

Trace nanoanalysis

1994 ◽  
Vol 52 ◽  
pp. 940-941
Author(s):  
D. E. Newbury ◽  
R. D. Leapman
Keyword(s):  
High Performance ◽  
Secondary Ion Mass Spectrometry ◽  
Detection Efficiency ◽  
Volume Element ◽  
And Performance ◽  
Trace Constituents ◽  
Secondary Ion ◽  
Concentration Levels ◽  
Structure Properties

Trace constituents, which can be very loosely defined as those present at concentration levels below 1 percent, often exert influence on structure, properties, and performance far greater than what might be estimated from their proportion alone. Defining the role of trace constituents in the microstructure, or indeed even determining their location, makes great demands on the available array of microanalytical tools. These demands become increasingly more challenging as the dimensions of the volume element to be probed become smaller. For example, a cubic volume element of silicon with an edge dimension of 1 micrometer contains approximately 5×1010 atoms. High performance secondary ion mass spectrometry (SIMS) can be used to measure trace constituents to levels of hundreds of parts per billion from such a volume element (e. g., detection of at least 100 atoms to give 10% reproducibility with an overall detection efficiency of 1%, considering ionization, transmission, and counting).

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