Evaluation of Copper Ion Drift in Low-Dielectric-Constant Interlayer Films by Transient Capacitance Spectroscopy

2003 ◽  
Vol 766 ◽  
Author(s):  
Takenobu Yoshino ◽  
Nobuhiro Hata ◽  
Takamaro Kikkawa
Keyword(s):  
Dielectric Constant ◽  
Thermal Emission ◽  
Copper Ion ◽  
Electronic States ◽  
Copper Electrode ◽  
Conduction Band Edge ◽  
Low Dielectric Constant ◽  
Ion Drift ◽  
Low Dielectric ◽  
Transient Capacitance

AbstractThe evidence of copper (Cu) ion drift in low-dielectric-constant (low-k) interlayer films is clearly shown by transient capacitance measurements for the first time. The bias-temperaturestress (BTS) was applied to the copper electrode of Cu/low-k/p-Si metal-insulator-semiconductor capacitors. After injecting photoelectrons into the low-k film from the substrate, time-dependence of the capacitance was measured. When BTS-applied samples were measured, a decrement of the capacitance was observed, whereas not observed without BTS. The decrement of the capacitance was attributed to thermal emission of electrons from copper-related electronic states. By assuming an attempt-to-escape frequency of the charge from the electronic states, the energy level of Cu was estimated to be 0.8–0.9 eV below the conduction band edge.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

Defect free monolayer and bilayer graphene exfoliated by solvent with low dielectric constant

2020 ◽  
Author(s):  
Vedanki ◽  
Chandrabhan Dohare ◽  
Pawan KumarSrivastava ◽  
Premlata Yadav ◽  
Subhasis Ghosh
Keyword(s):  
Dielectric Constant ◽  
Bilayer Graphene ◽  
Low Dielectric Constant ◽  
Low Dielectric
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