Effective channel length measurement of metal-oxide-semiconductor transistors with pocket implant using the subthreshold current-voltage characteristics based on remote Coulomb scattering

C. W. Eng; W. S. Lau; D. Vigar; S. S. Tan; L. Chan

doi:10.1063/1.2093943

Effective channel length measurement of metal-oxide-semiconductor transistors with pocket implant using the subthreshold current-voltage characteristics based on remote Coulomb scattering

Applied Physics Letters ◽

10.1063/1.2093943 ◽

2005 ◽

Vol 87 (15) ◽

pp. 153510 ◽

Cited By ~ 11

Author(s):

C. W. Eng ◽

W. S. Lau ◽

D. Vigar ◽

S. S. Tan ◽

L. Chan

Keyword(s):

Metal Oxide ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Length Measurement ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Subthreshold Current ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Effective Channel

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Reconsideration of effective channel length for metal–oxide–semiconductor field-effect transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.064303 ◽

2014 ◽

Vol 53 (6) ◽

pp. 064303 ◽

Cited By ~ 3

Author(s):

Kazuo Terada ◽

Kazuhiko Sanai ◽

Katsuhiro Tsuji

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Effective Channel

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Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l978 ◽

1995 ◽

Vol 34 (Part 2, No. 8A) ◽

pp. L978-L980

Author(s):

Chii-Wen Chen ◽

Yean-Kuen Fang ◽

Gun-Yuan Lee ◽

Jang-Cheng Hsieh ◽

MongSongLiang ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Current Voltage ◽

Current Voltage Characteristics

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Anomalous effects on the current‐voltage characteristics ofp‐channel metal‐oxide‐semiconductor transistors in the temperature range 4.2–50 K

Journal of Applied Physics ◽

10.1063/1.346579 ◽

1990 ◽

Vol 68 (4) ◽

pp. 1896-1901 ◽

Cited By ~ 40

Author(s):

A. G. Nassiopoulos ◽

D. Tsamakis ◽

E. Rocofyllou

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Range ◽

Current Voltage ◽

Current Voltage Characteristics

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Effective Channel Length Shortening and Mobility Increase of p-Channel Metal Oxide Semiconductor Transistors Resulting in Higher Drive Current Using Short Source–Drain Diffusion Length

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.925 ◽

2004 ◽

Vol 43 (3) ◽

pp. 925-930 ◽

Cited By ~ 1

Author(s):

Kwang-Seng See ◽

Wai-Shing Lau ◽

Hong Liao ◽

Chee-Wee Eng ◽

Kian-Meng Tee ◽

...

Keyword(s):

Metal Oxide ◽

Diffusion Length ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drive Current ◽

Effective Channel

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Sodium-peak splitting in dynamic current-voltage characteristics of convective ion currents in metal-oxide-semiconductor structures

Semiconductors ◽

10.1134/s1063782608010065 ◽

2008 ◽

Vol 42 (1) ◽

pp. 43-51 ◽

Cited By ~ 4

Author(s):

S. G. Dmitriev ◽

Yu. V. Markin

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ion Currents ◽

Peak Splitting ◽

Semiconductor Structures ◽

Current Voltage ◽

Current Voltage Characteristics

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Separation of dynamic current-voltage characteristics (DCVCs) of an oxide film from the DCVC of ionic currents in a metal/oxide/semiconductor structure: Universal quasi-static DCVCs of a film

Journal of Communications Technology and Electronics ◽

10.1134/s106422690602001x ◽

2006 ◽

Vol 51 (2) ◽

pp. 123-140 ◽

Cited By ~ 3

Author(s):

S. G. Dmitriev ◽

Yu. V. Markin ◽

V. E. Sizov

Keyword(s):

Oxide Film ◽

Metal Oxide ◽

Ionic Currents ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Metal Oxide Semiconductor Structure

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Wave function penetration effects on current–voltage characteristics of ballistic metal–oxide–semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.1519957 ◽

2003 ◽

Vol 93 (1) ◽

pp. 600-604 ◽

Cited By ~ 5

Author(s):

M. Yunus ◽

A. Haque

Keyword(s):

Wave Function ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Voltage ◽

Current Voltage Characteristics

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Slow response in gate current–voltage characteristics of metal–oxide–semiconductor structures on the 4H-SiC$(000\bar{1})$ face

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.054103 ◽

2016 ◽

Vol 55 (5) ◽

pp. 054103 ◽

Cited By ~ 5

Author(s):

Naoki Kumagai ◽

Hiroshi Kimura ◽

Yasuhiko Onishi ◽

Mitsuo Okamoto ◽

Kenji Fukuda

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Slow Response ◽

Gate Current ◽

Semiconductor Structures ◽

Current Voltage ◽

Current Voltage Characteristics

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Effective Channel Length and Source-Drain Series-Resistance Determination after Electrical Gate Length Verification of Metal-Oxide-Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.796 ◽

1998 ◽

Vol 37 (Part 1, No. 3A) ◽

pp. 796-800 ◽

Cited By ~ 1

Author(s):

Ting-Huan Chang ◽

Jenn-Gee Lo ◽

Tung-Cheng Kuo ◽

Charles Ching-Hsiang Hsu ◽

Swei-Yam Yu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Series Resistance ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Effect Transistor ◽

Effective Channel

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Influence of the oxide charge build-up during Fowler-Nordheim stress on the current-voltage characteristics of metal-oxide-semiconductor capacitors

Journal of Non-Crystalline Solids ◽

10.1016/0022-3093(95)00133-6 ◽

1995 ◽

Vol 187 ◽

pp. 175-180 ◽

Cited By ~ 3

Author(s):

Simon Elrharbi ◽

Marc Jourdain

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Charge ◽

Current Voltage ◽

Current Voltage Characteristics

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