Bendable high-frequency microwave switches formed with single-crystal silicon nanomembranes on plastic substrates

2009 ◽  
Vol 95 (4) ◽  
pp. 043109 ◽  
Author(s):  
Hao-Chih Yuan ◽  
Guoxuan Qin ◽  
George K. Celler ◽  
Zhenqiang Ma
Keyword(s):  
Single Crystal ◽  
High Frequency ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Plastic Substrates ◽  
Microwave Switches ◽  
Silicon Nanomembranes ◽  
High Frequency Microwave

scholarly journals Transferrable single-crystal silicon nanomembranes and their application to flexible microwave systems

2011 ◽  
Vol 12 (2) ◽  
pp. 109-113 ◽  
Author(s):  
Jung-Hun Seo ◽  
Hao-Chih Yuan ◽  
Lei Sun ◽  
Weidong Zhou ◽  
Zhenqiang Ma
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Nanomembranes

High-performance conformal sensors employing single-crystal silicon nanomembranes

2014 ◽  
Author(s):  
Xiaochuan Xu ◽  
Harish Subbaraman ◽  
Swapnajit Chakravarty ◽  
Ray T. Chen
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Nanomembranes

Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates

2005 ◽  
Vol 86 (13) ◽  
pp. 133507 ◽  
Author(s):  
Z.-T. Zhu ◽  
E. Menard ◽  
K. Hurley ◽  
R. G. Nuzzo ◽  
J. A. Rogers
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Plastic Substrates ◽  
Silicon Transistors

scholarly journals A vertical silicon-graphene-germanium transistor

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Chi Liu ◽  
Wei Ma ◽  
Maolin Chen ◽  
Wencai Ren ◽  
Dongming Sun
Keyword(s):  
Single Crystal ◽  
Barrier Height ◽  
High Frequency ◽  
Single Crystal Silicon ◽  
Single Layer ◽  
Potential Barrier Height ◽  
Single Layer Graphene ◽  
Crystal Silicon ◽  
Layer Graphene ◽  
A Current

Abstract Graphene-base transistors have been proposed for high-frequency applications because of the negligible base transit time induced by the atomic thickness of graphene. However, generally used tunnel emitters suffer from high emitter potential-barrier-height which limits the transistor performance towards terahertz operation. To overcome this issue, a graphene-base heterojunction transistor has been proposed theoretically where the graphene base is sandwiched by silicon layers. Here we demonstrate a vertical silicon-graphene-germanium transistor where a Schottky emitter constructed by single-crystal silicon and single-layer graphene is achieved. Such Schottky emitter shows a current of 692 A cm−2 and a capacitance of 41 nF cm−2, and thus the alpha cut-off frequency of the transistor is expected to increase from about 1 MHz by using the previous tunnel emitters to above 1 GHz by using the current Schottky emitter. With further engineering, the semiconductor-graphene-semiconductor transistor is expected to be one of the most promising devices for ultra-high frequency operation.

High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates

2006 ◽  
Vol 27 (6) ◽  
pp. 460-462 ◽  
Author(s):  
Jong-Hyun Ahn ◽  
Hoon-Sik Kim ◽  
Keon Jae Lee ◽  
Zhengtao Zhu ◽  
E. Menard ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistors ◽  
High Speed ◽  
Single Crystal Silicon ◽  
Silicon Thin Film ◽  
Crystal Silicon ◽  
Plastic Substrates

Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

2015 ◽  
Vol 106 (18) ◽  
pp. 181107 ◽  
Author(s):  
Minkyu Cho ◽  
Jung-Hun Seo ◽  
Jaeseong Lee ◽  
Deyin Zhao ◽  
Hongyi Mi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Crystal Silicon ◽  
Silicon Nanomembranes
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