RF model of flexible microwave switches employing single-crystal silicon nanomembranes on a plastic substrate

2012 ◽  
Vol 95 ◽  
pp. 21-25 ◽  
Author(s):  
Guoxuan Qin ◽  
Hao-Chih Yuan ◽  
George K. Celler ◽  
Jianguo Ma ◽  
Zhenqiang Ma
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Plastic Substrate ◽  
Crystal Silicon ◽  
Microwave Switches ◽  
Silicon Nanomembranes

scholarly journals Transferrable single-crystal silicon nanomembranes and their application to flexible microwave systems

2011 ◽  
Vol 12 (2) ◽  
pp. 109-113 ◽  
Author(s):  
Jung-Hun Seo ◽  
Hao-Chih Yuan ◽  
Lei Sun ◽  
Weidong Zhou ◽  
Zhenqiang Ma
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Nanomembranes

High-performance conformal sensors employing single-crystal silicon nanomembranes

2014 ◽  
Author(s):  
Xiaochuan Xu ◽  
Harish Subbaraman ◽  
Swapnajit Chakravarty ◽  
Ray T. Chen
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Nanomembranes

Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

2015 ◽  
Vol 106 (18) ◽  
pp. 181107 ◽  
Author(s):  
Minkyu Cho ◽  
Jung-Hun Seo ◽  
Jaeseong Lee ◽  
Deyin Zhao ◽  
Hongyi Mi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Crystal Silicon ◽  
Silicon Nanomembranes

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Sign in / Sign up

Export Citation Format

Share Document