Mechanically flexible thin film transistors and logic gates on plastic substrates by use of single-crystal silicon wires from bulk wafers

2010 ◽  
Vol 96 (17) ◽  
pp. 173501 ◽  
Author(s):  
Seoung-Ki Lee ◽  
Houk Jang ◽  
Musarrat Hasan ◽  
Jae Bon Koo ◽  
Jong-Hyun Ahn
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistors ◽  
Single Crystal Silicon ◽  
Logic Gates ◽  
Crystal Silicon ◽  
Plastic Substrates

High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates

2006 ◽  
Vol 27 (6) ◽  
pp. 460-462 ◽  
Author(s):  
Jong-Hyun Ahn ◽  
Hoon-Sik Kim ◽  
Keon Jae Lee ◽  
Zhengtao Zhu ◽  
E. Menard ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistors ◽  
High Speed ◽  
Single Crystal Silicon ◽  
Silicon Thin Film ◽  
Crystal Silicon ◽  
Plastic Substrates

High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers

2006 ◽  
Vol 100 (1) ◽  
pp. 013708 ◽  
Author(s):  
Hao-Chih Yuan ◽  
Zhenqiang Ma ◽  
Michelle M. Roberts ◽  
Donald E. Savage ◽  
Max G. Lagally
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistors ◽  
High Speed ◽  
Single Crystal Silicon ◽  
Flexible Polymers ◽  
Silicon Thin Film ◽  
Crystal Silicon

scholarly journals Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer

Nanomaterials ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 1060 ◽  
Author(s):  
Jiaqi Zhang ◽  
Yi Zhang ◽  
Dazheng Chen ◽  
Weidong Zhu ◽  
He Xi ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Single Crystal ◽  
Ohmic Contact ◽  
Thin Film Transistors ◽  
Single Crystal Silicon ◽  
Bending Test ◽  
Crystal Silicon ◽  
Silicon Nanomembrane ◽  
Tio2 Interlayer

Bendable single crystal silicon nanomembrane thin film transistors (SiNMs TFTs), employing a simple method which can improve the metal/n-Silicon (Si) contact characteristics by inserting the titanium dioxide (TiO2) interlayer deposited by atomic layer deposition (ALD) at a low temperature (90 °C), are fabricated on ITO/PET flexible substrates. Current-voltage characteristics of titanium (Ti)/insertion layer (IL)/n-Si structures demonstrates that they are typically ohmic contacts. X-ray photoelectron spectroscopy (XPS) results determines that TiO2 is oxygen-vacancies rich, which may dope TiO2 and contribute to a lower resistance. By inserting TiO2 between Ti and n-Si, Ids of bendable single crystal SiNMs TFTs increases 3–10 times than those without the TiO2 insertion layer. The fabricated bendable devices show superior flexible properties. The TFTs, whose electrical properties keeps almost unchanged in 800 cycles bending with a bending radius of 0.75 cm, obtains the durability in bending test. All of the results confirm that it is a promising method to insert the TiO2 interlayer for improving the Metal/n-Si ohmic contact in fabrication of bendable single crystal SiNMs TFTs.

Single crystal silicon thin film transistors fabricated at low process temperatures on glass substrates

1996 ◽  
Vol 32 (8) ◽  
pp. 775 ◽  
Author(s):  
D.N. Kouvatsos ◽  
D. Tsoukalas ◽  
G.T. Sarcona ◽  
M.K. Hatalis ◽  
J. Stoemenos
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistors ◽  
Single Crystal Silicon ◽  
Silicon Thin Film ◽  
Crystal Silicon ◽  
Glass Substrates

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

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