Profiling interface traps in MOS transistors by the DC current-voltage method

1996 ◽  
Vol 17 (2) ◽  
pp. 72-74 ◽  
Author(s):  
Chih-Tang Sah ◽  
A. Neugroschel ◽  
K.M. Han ◽  
J.T. Kavalieros
Keyword(s):  
Interface Traps ◽  
Mos Transistors ◽  
Current Voltage ◽  
Dc Current

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

2013 ◽  
Vol 740-742 ◽  
pp. 533-536 ◽  
Author(s):  
Viktoryia Uhnevionak ◽  
Christian Strenger ◽  
Alex Burenkov ◽  
Vincent Mortet ◽  
Elena Bedel-Pereira ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Fixed Charge ◽  
Interface Traps ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Mobility Degradation ◽  
Current Voltage ◽  
Degradation Models ◽  
Electrical Data

4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical simulation. To describe the observed electrical characteristics of the SiC MOSFETs, Near-Interface Traps (NIT) and mobility degradation models were included in the simulation. The main finding of the simulation is that two models for the NIT states in the upper part of the SiC bandgap are able to describe the electrical data equally well. In one of them, acceptor-like traps and fixed charge are considered while in a newly developed one, donor-like traps are taken into account also.

Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes

2014 ◽  
Vol 778-780 ◽  
pp. 710-713 ◽  
Author(s):  
Hamid Amini Moghadam ◽  
Sima Dimitrijev ◽  
Ji Sheng Han
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Interface Traps ◽  
Barrier Heights ◽  
Current Voltage ◽  
Donor Type ◽  
Current Voltage Characteristics ◽  
Expected Values

This paper presents a physical model based on interface traps to explain both the larger barrier heights of practical Schottky diodes in comparison to the theoretically expected values and the appearance of a knee in the log I–V characteristics. According to this model, acceptor-type interface traps near the valance band increase the Schottky barrier height, which shifts the log I–V characteristic to higher forward-bias voltages. In addition to the acceptor traps, donor-type interface traps can appear near the conduction band, and when they do, they cause the knee in the log I–V characteristics as their energy level falls below the Fermi level and the charge associated with these traps changes from positive to neutral.

LEFT-HANDED MAXWELLIAN BEHAVIOR OF NATURAL MICA

2011 ◽  
Vol 25 (30) ◽  
pp. 2323-2333
Author(s):  
ADITI SARKAR ◽  
ARNAB GANGOPADHYAY ◽  
A. SARKAR
Keyword(s):  
Monochromatic Light ◽  
Polarized Light ◽  
X Ray Diffraction ◽  
Optical Reflectance ◽  
Optical Absorbance ◽  
Left Handed ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Dc Current ◽  
Theoretical Results

In this work, meta-material like behavior of natural Mica are studied. This work makes an attempt to analyze the left-handed Maxwellian (LHM) properties of Mica. The investigations carried out on natural Mica specimen are optical reflectance, optical absorbance and DC current–voltage-characteristics (CVC). Optical reflectance of Mica sheet with plane polarized monochromatic light shows distinct difference with conventional theoretical results. The DC CVC also measured with complete electromagnetic shielding. There exists a clear difference in DC characteristic for presence and absence of stray electromagnetic fields. The X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible spectroscopy (UV-VIS) analysis are also carried out for further analysis. The results obtained from the optical reflectance characteristics using polarized light indicate LHM behavior as may be found in a meta-material. Micro-structural and electrical analysis shows that it is a nano-structured layered material.

scholarly journals Sputter deposition of thin film MIM capacitors on LTCC substrates for RF bypass and filtering applications

2011 ◽  
Vol 2011 (1) ◽  
pp. 000747-000752 ◽  
Author(s):  
Jack Murray ◽  
Wayne Huebner ◽  
Matthew J. O’Keefe ◽  
Kristina Wilder ◽  
Ryan Eatinger ◽  
...  
Keyword(s):  
Thin Film ◽  
Impedance Analysis ◽  
Low Loss ◽  
Experimental Conditions ◽  
Thin Film Capacitors ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Sputter Deposited ◽  
Tan Δ ◽  
Dc Current

Thin film capacitors for RF bypass and filtering applications were sputter deposited onto low temperature co-fired ceramic (LTCC) substrates. The capacitors were configured in a metal-insulator-metal (MIM) design featuring 200 nm thick Al electrodes and a 300 nm thick Al2O3 dielectric layer, with dimensions varied between ∼150×150 μm and ∼750×750 μm. DC current-voltage measurements (E ≤ 5 MV/cm) coupled with impedance analysis (≤15 MHz) was used to characterize the resulting devices. More than 90% of the devices functioned as capacitors with high DC resistance (>20 MΩ) and low loss (tan δ <0.1). A second set of capacitors were made under the same experimental conditions with device geometries optimized for high frequency (≥200 MHz) applications. These capacitors featured temperature coefficient of capacitance (TCC) values between 500 and 1000 ppm/°C as well as low loss and high self-resonant frequency performance (ESR <0.6 Ohms at self-resonance of 5.7 GHz for 82 pF). Capacitance and loss values were comparable between the capacitor structures of similar areas at the different frequency regimes.

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