scholarly journals Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO

2008 ◽  
Vol 93 (12) ◽  
pp. 123309 ◽  
Author(s):  
M. Nakano ◽  
T. Makino ◽  
A. Tsukazaki ◽  
K. Ueno ◽  
A. Ohtomo ◽  
...  
Keyword(s):  
High Performance ◽  
Schottky Contact ◽  
Visible Blind

scholarly journals High-Performance AlGaN-Based Visible-Blind Resonant Cavity Enhanced Schottky Photodiodes

2003 ◽  
Vol 764 ◽  
Author(s):  
Ibrahim Kimukin ◽  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytür ◽  
Ekmel Ozbay
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Speed ◽  
High Performance ◽  
Resonant Cavity ◽  
Schottky Contact ◽  
Uv Detector ◽  
Ito Thin Films ◽  
Schottky Devices ◽  
Visible Blind

AbstractWe have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact

2005 ◽  
Vol 87 (2) ◽  
pp. 022105 ◽  
Author(s):  
Meiyong Liao ◽  
Yasuo Koide ◽  
Jose Alvarez
Keyword(s):  
Tungsten Carbide ◽  
Schottky Contact ◽  
Thermally Stable ◽  
Visible Blind

High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction

2018 ◽  
Vol 10 (9) ◽  
pp. 8102-8109 ◽  
Author(s):  
Jingjing Yu ◽  
Kashif Javaid ◽  
Lingyan Liang ◽  
Weihua Wu ◽  
Yu Liang ◽  
...  
Keyword(s):  
High Performance ◽  
Ultraviolet Photodetector ◽  
Visible Blind ◽  
Igzo Tft

scholarly journals High-performance visible-blind GaN-based p-i-n photodetectors

2008 ◽  
Vol 92 (3) ◽  
pp. 033507 ◽  
Author(s):  
Bayram Butun ◽  
Turgut Tut ◽  
Erkin Ulker ◽  
Tolga Yelboga ◽  
Ekmel Ozbay
Keyword(s):  
High Performance ◽  
Visible Blind

High Performance Zinc Oxide Thin Film Transistors Through Improved Material Processing and Device Design

2014 ◽  
Author(s):  
Ahmad Hossein Adl ◽  
Samira Farsinezhad ◽  
Alex Ma ◽  
Douglas W. Barlage ◽  
Karthik Shankar
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Schottky Contact ◽  
Depletion Region ◽  
Charge Carriers ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Poor Control ◽  
High Throughput Method

Solution processing (SP) is a cheap, simple and high-throughput method for the fabrication of ZnO thin film transistors (TFTs). Lack of enhancement mode operation, poor crystallinity, traps, and poor control of the carrier concentration are some of the disadvantages of this method. The high intrinsic electron concentration of SP-ZnO makes saturation of TFTs non-trivial. We report on Schottky barrier thin film transistors (SB-TFT). By biasing the source Schottky contact in reverse bias, a depletion region is formed around the source contact hence depleting the region from the free charge carriers which produces the saturation of the device. The effect of the Schottky contact is illustrated by comparing the operation of SB-TFTs with that of conventional TFTs.

Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor

2015 ◽  
Vol 821-823 ◽  
pp. 436-439 ◽  
Author(s):  
Razvan Pascu ◽  
Gheorghe Pristavu ◽  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Marian Badila ◽  
...  
Keyword(s):  
Barrier Height ◽  
Temperature Sensor ◽  
High Performance ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Post Annealing ◽  
Schottky Device ◽  
Post Annealing Temperature

The electrical behavior and stability of a temperature sensor based on 4H-SiC Schottky diodes using Ni2Si as Schottky contact, are investigated. The ideality factor and the barrier height were found to be strongly dependent on the post-annealing temperature of the Ni contact (which lead to the formation of Ni2Si). A nearly ideal Schottky device, with the barrier height approaching the high value of1.7eV, and a slight temperature dependence, was obtained after an annealing atTA=800°C.This high barrier height proves that Ni2Si is suitable as Schottky contact for temperature sensors, able to reliably operate up to450°C. Sensor sensitivity levels between1.00mV/°Cand2.70 mV/°Chave been achieved.

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