Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact

2005 ◽  
Vol 87 (2) ◽  
pp. 022105 ◽  
Author(s):  
Meiyong Liao ◽  
Yasuo Koide ◽  
Jose Alvarez
Keyword(s):  
Tungsten Carbide ◽  
Schottky Contact ◽  
Thermally Stable ◽  
Visible Blind

Tungsten carbide Schottky contact to diamond toward thermally stable photodiode

2005 ◽  
Vol 14 (11-12) ◽  
pp. 2003-2006 ◽  
Author(s):  
Meiyong Liao ◽  
Jose Alvarez ◽  
Yasuo Koide
Keyword(s):  
Tungsten Carbide ◽  
Schottky Contact ◽  
Thermally Stable

Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure

Vacuum ◽  
2013 ◽  
Vol 87 ◽  
pp. 150-154 ◽  
Author(s):  
Jin-Ping Ao ◽  
Yoshiki Naoi ◽  
Yasuo Ohno
Keyword(s):  
Schottky Contact ◽  
Thermally Stable ◽  
Gan Heterostructure

scholarly journals Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO

2008 ◽  
Vol 93 (12) ◽  
pp. 123309 ◽  
Author(s):  
M. Nakano ◽  
T. Makino ◽  
A. Tsukazaki ◽  
K. Ueno ◽  
A. Ohtomo ◽  
...  
Keyword(s):  
High Performance ◽  
Schottky Contact ◽  
Visible Blind

Thermally stable PtSi Schottky contact on n-GaN

1997 ◽  
Vol 70 (10) ◽  
pp. 1275-1277 ◽  
Author(s):  
Q. Z. Liu ◽  
L. S. Yu ◽  
S. S. Lau ◽  
J. M. Redwing ◽  
N. R. Perkins ◽  
...  
Keyword(s):  
Schottky Contact ◽  
Thermally Stable

scholarly journals High-Performance AlGaN-Based Visible-Blind Resonant Cavity Enhanced Schottky Photodiodes

2003 ◽  
Vol 764 ◽  
Author(s):  
Ibrahim Kimukin ◽  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytür ◽  
Ekmel Ozbay
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Speed ◽  
High Performance ◽  
Resonant Cavity ◽  
Schottky Contact ◽  
Uv Detector ◽  
Ito Thin Films ◽  
Schottky Devices ◽  
Visible Blind

AbstractWe have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor

2017 ◽  
Vol 111 (24) ◽  
pp. 243504 ◽  
Author(s):  
Venkata S. N. Chava ◽  
Bobby G. Barker ◽  
Anusha Balachandran ◽  
Asif Khan ◽  
G. Simin ◽  
...  
Keyword(s):  
Schottky Contact ◽  
Epitaxial Graphene ◽  
Visible Blind
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