High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction

2018 ◽  
Vol 10 (9) ◽  
pp. 8102-8109 ◽  
Author(s):  
Jingjing Yu ◽  
Kashif Javaid ◽  
Lingyan Liang ◽  
Weihua Wu ◽  
Yu Liang ◽  
...  
Keyword(s):  
High Performance ◽  
Ultraviolet Photodetector ◽  
Visible Blind ◽  
Igzo Tft

High-performance visible blind ultraviolet photodetector based on KTaO_3 single crystal

2016 ◽  
Vol 55 (9) ◽  
pp. 2259 ◽  
Author(s):  
Jing-ting Yang ◽  
Chen Ge ◽  
Kui-juan Jin ◽  
Hui-bin Lu ◽  
Guo-zhen Yang
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Ultraviolet Photodetector ◽  
Visible Blind

High performance, self-powered ultraviolet photodetector based on a ZnO nanoarrays/GaN structure with a CdS insert layer

2017 ◽  
Vol 41 (12) ◽  
pp. 4901-4907 ◽  
Author(s):  
Hai Zhou ◽  
Pengbin Gui ◽  
Lu Yang ◽  
Cong Ye ◽  
Mengni Xue ◽  
...  
Keyword(s):  
High Performance ◽  
Ultraviolet Photodetector ◽  
Self Powered

A self-powered photodetector based on a ZnO nanoarrays/CdS/GaN structure with a responsivity as high as 176 mA W−1 at 300 nm.

Solution-assembled nanowires for high performance flexible and transparent solar-blind photodetectors

2015 ◽  
Vol 3 (3) ◽  
pp. 596-600 ◽  
Author(s):  
Jiangxin Wang ◽  
Chaoyi Yan ◽  
Meng-Fang Lin ◽  
Kazuhito Tsukagoshi ◽  
Pooi See Lee
Keyword(s):  
High Performance ◽  
Switching Time ◽  
Ultraviolet Photodetector ◽  
Assembly Method ◽  
Solar Blind

An all-NW ultraviolet photodetector with high photoresponse and improved switching time was fabricated by a solution assembly method.

High performance ultraviolet photodetector based on a spray-coated nanocrystal quantum dots layer and Si photodiode

2018 ◽  
Vol 273 ◽  
pp. 182-188 ◽  
Author(s):  
Jihye Lee ◽  
Eun-Hwan Jang ◽  
Won Seok Chang ◽  
Sohee Jeong ◽  
Eungsug Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Performance ◽  
Ultraviolet Photodetector ◽  
Nanocrystal Quantum Dots

The suppression of dark current for achieving high-performance Ga2O3 nanorod array ultraviolet photodetector

2022 ◽  
Author(s):  
Jia-Yun Wei ◽  
Liang-Ping Shen ◽  
Zhuo-Cheng Zheng ◽  
Yong-Chang Xu ◽  
Hao Wu ◽  
...  
Keyword(s):  
Dark Current ◽  
High Performance ◽  
Nanorod Array ◽  
Ultraviolet Photodetector

Broadband Ultraviolet Photodetector Based on Graphene/β-Ga2O3/GaN Heterojunction

2020 ◽  
Vol 1014 ◽  
pp. 131-136
Author(s):  
Chun Hong Zeng ◽  
Yong Jian Ma ◽  
Bao Shun Zhang ◽  
Ya Meng Xu ◽  
Mei Kong
Keyword(s):  
Vapor Deposition ◽  
High Performance ◽  
Chemical Vapor ◽  
Transparent Electrode ◽  
Organic Chemical ◽  
Ultraviolet Photodetector ◽  
Micro Fabrication ◽  
Internal Gain ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Broadband ultraviolet (BUV) photodetectors are widely used in military and civil fields. A high performance BUV photodetector based on graphene/β-Ga2O3/GaN heterojunction is proposed and realized by semiconductor micro-fabrication techniques in this paper. The β-Ga2O3 and GaN films are grown by metal organic chemical vapor deposition (MOCVD), and the graphene is also used as a transparent electrode. The device exhibits a broad response band from 230 nm to 368 nm with responsivity exceeding 0.4A/W at -5 V bias voltage and a peak responsivity of 0.53 A/W at 256 nm. These performances can be attributed to the internal gain mechanism of graphene/β-Ga2O3/GaN heterojunction and the optical properties of graphene. Our work provides an efficient method to realize a high-performance BUV photodetector for photoelectric applications.

Responsivity improvement of a packaged ZnMgO solar blind ultraviolet photodetector via a sealing treatment of silica gel

2020 ◽  
Vol 8 (3) ◽  
pp. 1089-1094 ◽  
Author(s):  
Xing Chen ◽  
Liyan Wang ◽  
Kewei Liu ◽  
Zhenzhong Zhang ◽  
Binghui Li ◽  
...  
Keyword(s):  
Silica Gel ◽  
High Performance ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Solar Blind ◽  
Sealing Treatment

A packaged high performance ZnMgO solar-blind UV photodetector is prepared via a silica gel sealing treatment. The responsivity and stability of the device is improved according to this sealing treatment.

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