Threshold switching and phase transition numerical models for phase change memory simulations

2008 ◽  
Vol 103 (11) ◽  
pp. 111101 ◽  
Author(s):  
A. Redaelli ◽  
A. Pirovano ◽  
A. Benvenuti ◽  
A. L. Lacaita
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Numerical Models ◽  
Phase Change Memory ◽  
Threshold Switching ◽  
Change Memory

scholarly journals The Effect of Channel Length on Phase Transition of Phase Change Memory

2018 ◽  
Vol 7 (3.11) ◽  
pp. 25
Author(s):  
M S. A.Aziz ◽  
F H. M.Fauzi ◽  
Z Mohamad ◽  
R I. Alip
Keyword(s):  
Phase Transition ◽  
Silicon Carbide ◽  
Phase Change ◽  
Pulse Width ◽  
Crystalline State ◽  
Phase Change Memory ◽  
Amorphous State ◽  
Channel Length ◽  
Change Memory

The phase transition of germanium antimony tellurium (GST) and the temperature of GST were investigated using COMSOL Multiphysic 5.0 software. Silicon carbide was using as a heater layer in the separate heater structure of PCM. These simulations have a different channel of SiC. The temperature of GST and the phase transition of GST can be obtained from the simulation. From the simulation, the 300 nm channel of SiC can change the GST from amorphous to crystalline state at 0.7V with 100 ns pulse width. The 800 nm channel of SiC can change the GST from amorphous to crystalline state at 1.1V with 100 ns pulse width. Results demonstrated that the channel of SIC can affecting the temperature of GST and the GST changes from amorphous state to crystalline state. As the channel of SiC decreased, the temperature of GST was increased and the GST was change to crystalline state quickly.  

Nonthermal phase transition in phase change memory cells induced by picosecond electric pulse

2011 ◽  
Vol 98 (24) ◽  
pp. 242106 ◽  
Author(s):  
D. Q. Huang ◽  
X. S. Miao ◽  
Z. Li ◽  
J. J. Sheng ◽  
J. J. Sun ◽  
...  
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Electric Pulse ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

Threshold switching via electric field induced crystallization in phase-change memory devices

2012 ◽  
Vol 100 (25) ◽  
pp. 253105 ◽  
Author(s):  
Jorge A. Vázquez Diosdado ◽  
Peter Ashwin ◽  
Krisztian I. Kohary ◽  
C. David Wright
Keyword(s):  
Electric Field ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Threshold Switching ◽  
Induced Crystallization ◽  
Change Memory

Phase transition characteristics of Al-Sb phase change materials for phase change memory application

2013 ◽  
Vol 103 (7) ◽  
pp. 072114 ◽  
Author(s):  
Xilin Zhou ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Feng Rao ◽  
Kun Ren ◽  
...  
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Change Memory

scholarly journals Phase-change memory: A continuous multilevel compact model of subthreshold conduction and threshold switching

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FE13 ◽  
Author(s):  
Corentin Pigot ◽  
Fabien Gilibert ◽  
Marina Reyboz ◽  
Marc Bocquet ◽  
Paola Zuliani ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Compact Model ◽  
Threshold Switching ◽  
Change Memory
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