Phase transition characteristics of Al-Sb phase change materials for phase change memory application

2013 ◽  
Vol 103 (7) ◽  
pp. 072114 ◽  
Author(s):  
Xilin Zhou ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Feng Rao ◽  
Kun Ren ◽  
...  
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Change Memory

scholarly journals Scalability of Phase Change Materials in Nanostructure Template

2015 ◽  
Vol 2015 ◽  
pp. 1-4
Author(s):  
Wei Zhang ◽  
Biyun L. Jackson ◽  
Ke Sun ◽  
Jae Young Lee ◽  
Shyh-Jer Huang ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Scaling Limit ◽  
Phase Change Memory ◽  
Leakage Power ◽  
Memory Element ◽  
Transmission Electron ◽  
Diffraction Mode ◽  
Memory Applications ◽  
Change Memory

The scalability of In2Se3, one of the phase change materials, is investigated. By depositing the material onto a nanopatterned substrate, individual In2Se3nanoclusters are confined in the nanosize pits with well-defined shape and dimension permitting the systematic study of the ultimate scaling limit of its use as a phase change memory element. In2Se3of progressively smaller volume is heated inside a transmission electron microscope operating in diffraction mode. The volume at which the amorphous-crystalline transition can no longer be observed is taken as the ultimate scaling limit, which is approximately 5 nm3for In2Se3. The physics for the existence of scaling limit is discussed. Using phase change memory elements in memory hierarchy is believed to reduce its energy consumption because they consume zero leakage power in memory cells. Therefore, the phase change memory applications are of great importance in terms of energy saving.

scholarly journals The Effect of Channel Length on Phase Transition of Phase Change Memory

2018 ◽  
Vol 7 (3.11) ◽  
pp. 25
Author(s):  
M S. A.Aziz ◽  
F H. M.Fauzi ◽  
Z Mohamad ◽  
R I. Alip
Keyword(s):  
Phase Transition ◽  
Silicon Carbide ◽  
Phase Change ◽  
Pulse Width ◽  
Crystalline State ◽  
Phase Change Memory ◽  
Amorphous State ◽  
Channel Length ◽  
Change Memory

The phase transition of germanium antimony tellurium (GST) and the temperature of GST were investigated using COMSOL Multiphysic 5.0 software. Silicon carbide was using as a heater layer in the separate heater structure of PCM. These simulations have a different channel of SiC. The temperature of GST and the phase transition of GST can be obtained from the simulation. From the simulation, the 300 nm channel of SiC can change the GST from amorphous to crystalline state at 0.7V with 100 ns pulse width. The 800 nm channel of SiC can change the GST from amorphous to crystalline state at 1.1V with 100 ns pulse width. Results demonstrated that the channel of SIC can affecting the temperature of GST and the GST changes from amorphous state to crystalline state. As the channel of SiC decreased, the temperature of GST was increased and the GST was change to crystalline state quickly.  

Nonthermal phase transition in phase change memory cells induced by picosecond electric pulse

2011 ◽  
Vol 98 (24) ◽  
pp. 242106 ◽  
Author(s):  
D. Q. Huang ◽  
X. S. Miao ◽  
Z. Li ◽  
J. J. Sheng ◽  
J. J. Sun ◽  
...  
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Electric Pulse ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

Phase change materials and phase change memory

MRS Bulletin ◽  
2014 ◽  
Vol 39 (8) ◽  
pp. 703-710 ◽  
Author(s):  
Simone Raoux ◽  
Feng Xiong ◽  
Matthias Wuttig ◽  
Eric Pop
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Image Position ◽  
Change Memory

Abstract

Design of an Initialization Circuit Used in Phase Change Memory Chip

2014 ◽  
Vol 543-547 ◽  
pp. 471-474
Author(s):  
Qian Wang ◽  
Hou Peng Chen ◽  
Yi Yun Zhang ◽  
Xi Fan ◽  
Xi Li ◽  
...  
Keyword(s):  
Phase Change ◽  
High Resistance ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Memory Chip ◽  
Grain Sizes ◽  
Reset Operation ◽  
Materials Used ◽  
Change Memory

Design of a novel initialization circuit is presented in this paper. The initialization circuit is used to supply initialization current to the first test of phase change memory chip after delivery. Inhomogeneous crystalline grain sizes appear in phase change materials used in memory cells during manufacturing process. The crystalline phase with low resistance will convert to amorphous phase with high resistance after initialization, which is called RESET the memory cells to 0. Normal RESET operation current is not high enough to RESET great grain, which deteriorates bit yield of phase change memory chip. In comparison, the higher initialization current will increase bit yield observably.

Investigation of Time Instability Factors in Ti-SbxTe Based Phase Change Memory

2013 ◽  
Vol 873 ◽  
pp. 825-830 ◽  
Author(s):  
Xing Long Ji ◽  
Liang Cai Wu ◽  
Feng Rao ◽  
Zhi Tang Song ◽  
Min Zhu ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Crystallization Process ◽  
Phase Change Memory ◽  
Structure Model ◽  
Data Retention ◽  
Spontaneous Crystallization ◽  
Change Trend ◽  
Band Structure Model ◽  
Change Memory

In this paper, the two time instability factors in phase change memory, amorphous resistance drift and spontaneous crystallization process, are studied based on Ti2.75(SbxTe)97.25 and Ti6.85(SbxTe)93.15. The drift coefficients of both components are calculated and compared under room temperature. The reason why the drift coefficient decreases with the Ti concentration increases is discussed based on the band structure model of amorphous phase change materials. And the data retention change trend is also presented. The experiment results and the physical explaination can also be extended to other metallic element doped SbxTe alloy phase change materials.

Threshold switching and phase transition numerical models for phase change memory simulations

2008 ◽  
Vol 103 (11) ◽  
pp. 111101 ◽  
Author(s):  
A. Redaelli ◽  
A. Pirovano ◽  
A. Benvenuti ◽  
A. L. Lacaita
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Numerical Models ◽  
Phase Change Memory ◽  
Threshold Switching ◽  
Change Memory

Investigation of Phase Transition in Stacked Ge-Chalcogenide/SnTe Phase-change Memory Films

2007 ◽  
Vol 1056 ◽  
Author(s):  
Feiming Bai ◽  
Surendra Gupta ◽  
Archana Devasia ◽  
Santosh Kurinec ◽  
Morgan Davis ◽  
...  
Keyword(s):  
Phase Transition ◽  
Solid Solution ◽  
Phase Change ◽  
Phase Change Memory ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Area Detector ◽  
Memory Applications ◽  
Change Memory

ABSTRACTPhase transitions in stacked GeTe/SnTe and Ge2Se3/SnTe thin layers for potential phase-change memory applications have been investigated by X-ray diffraction using a two-dimensional area detector system. The as-deposited underlying GeTe or Ge2Se3 layer is amorphous, whereas the top SnTe layer is crystalline. In the GeTe/SnTe stack, the crystallization of GeTe phase occurs near 170°C, and upon further heating, the GeTe phase disappears, followed by the formation of rocksalt-structured GexSn1−xTe solid solution. In the Ge2Se3/SnTe stack, the phase transition starts with the separation of a SnSe phase due to the migration of Sn ions into the Ge2Se3 layer. SnSe is believed to facilitate the crystallization of Ge2Se3-SnTe solid solution at ∼360°C, which is much lower than the crystallization temperature of Ge2Se3, therefore consuming less power during the phase transition.

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