Nonthermal phase transition in phase change memory cells induced by picosecond electric pulse

2011 ◽  
Vol 98 (24) ◽  
pp. 242106 ◽  
Author(s):  
D. Q. Huang ◽  
X. S. Miao ◽  
Z. Li ◽  
J. J. Sheng ◽  
J. J. Sun ◽  
...  
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Electric Pulse ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

scholarly journals Enhancing Programming Variability in Multi-Bit Phase Change Memory Cells for Security

2020 ◽  
Vol 19 ◽  
pp. 820-828
Author(s):  
Nafisa Noor ◽  
Sadid Muneer ◽  
Raihan Sayeed Khan ◽  
Anna Gorbenko ◽  
Helena Silva
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

Modeling of Set and Reset Operations of Phase-Change Memory Cells

2011 ◽  
Vol 32 (12) ◽  
pp. 1737-1739 ◽  
Author(s):  
Azer Faraclas ◽  
Nicholas Williams ◽  
Ali Gokirmak ◽  
Helena Silva
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

scholarly journals The Effect of Channel Length on Phase Transition of Phase Change Memory

2018 ◽  
Vol 7 (3.11) ◽  
pp. 25
Author(s):  
M S. A.Aziz ◽  
F H. M.Fauzi ◽  
Z Mohamad ◽  
R I. Alip
Keyword(s):  
Phase Transition ◽  
Silicon Carbide ◽  
Phase Change ◽  
Pulse Width ◽  
Crystalline State ◽  
Phase Change Memory ◽  
Amorphous State ◽  
Channel Length ◽  
Change Memory

The phase transition of germanium antimony tellurium (GST) and the temperature of GST were investigated using COMSOL Multiphysic 5.0 software. Silicon carbide was using as a heater layer in the separate heater structure of PCM. These simulations have a different channel of SiC. The temperature of GST and the phase transition of GST can be obtained from the simulation. From the simulation, the 300 nm channel of SiC can change the GST from amorphous to crystalline state at 0.7V with 100 ns pulse width. The 800 nm channel of SiC can change the GST from amorphous to crystalline state at 1.1V with 100 ns pulse width. Results demonstrated that the channel of SIC can affecting the temperature of GST and the GST changes from amorphous state to crystalline state. As the channel of SiC decreased, the temperature of GST was increased and the GST was change to crystalline state quickly.  

Surface-Tensile-Stress Induced Polishing-Voids Suppression via H2O2 Oxidizer Effect in Cross-Point Phase-Change-Memory-Cells

2019 ◽  
Vol 8 (11) ◽  
pp. P667-P672
Author(s):  
Soo-Bum Kim ◽  
Hao Cui ◽  
Jong-Young Cho ◽  
Eun-Bin Seo ◽  
Sang-Su Yun ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Cross Point ◽  
Change Memory

Temperature dependence of SET switching characteristics in phase-change memory cells

2016 ◽  
Vol 49 (38) ◽  
pp. 385101
Author(s):  
Qiang He ◽  
Zhen Li ◽  
Chang Liu ◽  
Xiang-ru Meng ◽  
Ju-hong Peng ◽  
...  
Keyword(s):  
Phase Change ◽  
Temperature Dependence ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Set Switching ◽  
Switching Characteristics ◽  
Change Memory

Stopping Resistance Drift in Phase Change Memory Cells

2020 ◽  
Author(s):  
Raihan S. Khan ◽  
ABM Hasan Talukder ◽  
Faruk Dirisaglik ◽  
Ali Gokirmak ◽  
Helena Silva
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

Carbon-Based Liner for RESET Current Reduction in Self-Heating Phase- Change Memory Cells

2020 ◽  
Vol 67 (10) ◽  
pp. 4228-4233
Author(s):  
Anabel De Proft ◽  
Daniele Garbin ◽  
Gabriele Luca Donadio ◽  
Hubert Hody ◽  
Thomas Witters ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Self Heating ◽  
Heating Phase ◽  
Current Reduction ◽  
Change Memory ◽  
Carbon Based

scholarly journals Thermal-gradient-driven elemental segregation in Ge2Sb2Te5 phase change memory cells

2019 ◽  
Vol 114 (16) ◽  
pp. 163507 ◽  
Author(s):  
Phoebe Yeoh ◽  
Yuanzhi Ma ◽  
David A. Cullen ◽  
James A. Bain ◽  
Marek Skowronski
Keyword(s):  
Phase Change ◽  
Thermal Gradient ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Elemental Segregation ◽  
Change Memory
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