scholarly journals Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Krishna Dayal Shukla ◽  
Nishant Saxena ◽  
Suresh Durai ◽  
Anbarasu Manivannan
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Speed Limit ◽  
Time Resolved ◽  
Threshold Switching ◽  
Switching Dynamics ◽  
Change Memory

Threshold switching via electric field induced crystallization in phase-change memory devices

2012 ◽  
Vol 100 (25) ◽  
pp. 253105 ◽  
Author(s):  
Jorge A. Vázquez Diosdado ◽  
Peter Ashwin ◽  
Krisztian I. Kohary ◽  
C. David Wright
Keyword(s):  
Electric Field ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Threshold Switching ◽  
Induced Crystallization ◽  
Change Memory

scholarly journals Phase-change memory: A continuous multilevel compact model of subthreshold conduction and threshold switching

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FE13 ◽  
Author(s):  
Corentin Pigot ◽  
Fabien Gilibert ◽  
Marina Reyboz ◽  
Marc Bocquet ◽  
Paola Zuliani ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Compact Model ◽  
Threshold Switching ◽  
Change Memory

Threshold switching and phase transition numerical models for phase change memory simulations

2008 ◽  
Vol 103 (11) ◽  
pp. 111101 ◽  
Author(s):  
A. Redaelli ◽  
A. Pirovano ◽  
A. Benvenuti ◽  
A. L. Lacaita
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Numerical Models ◽  
Phase Change Memory ◽  
Threshold Switching ◽  
Change Memory

scholarly journals Amorphized Length and Variability in Phase Change Memory Line Cells

2020 ◽  
Author(s):  
Nafisa Noor ◽  
Sadid Muneer ◽  
Raihan Sayeed Khan ◽  
Anna Gorbenko ◽  
Helena Silva
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Amorphous State ◽  
Critical Parameters ◽  
Threshold Field ◽  
Electrical Measurements ◽  
Threshold Switching ◽  
Reset Voltage ◽  
Threshold Voltages ◽  
Change Memory

The dimensions of amorphized regions in phase-change memory cells are critical parameters to design devices for different applications but are difficult to determine by direct imaging. In this work, the length of amorphized regions in multiple, identical Ge2Sb2Te5 (GST) line cells was extracted from electrical measurements. After each cell was programmed to an amorphous state, a sequence of increasing amplitude post-reset voltage pulses separated by low-amplitude read DC-sweeps was applied. When a sufficient amplitude post-reset voltage pulse was applied to a given cell, the measured current and the post-pulse resistance increased drastically, indicating the cell re-amorphized after threshold switching, melting, and quenching. The amorphized length was calculated using the measured voltage at which threshold switching took place and the expected drifted threshold field at that time. The measured threshold voltages, hence, the extracted amorphized lengths, generally increase linearly with the programmed resistance levels, but significant variability arises from the intrinsic uniqueness in the crystallization and amorphization processes in these devices. For example, cells programmed to ~50 MΩ amorphous resistance show threshold voltages of ~5-7 V, corresponding to amorphized lengths of ~240-360 nm. This unpredictable programming feature in phase-change memory devices can be utilized in hardware security applications.

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