Hole mobility in Mg-doped p-type InN films

2008 ◽  
Vol 92 (13) ◽  
pp. 132108 ◽  
Author(s):  
Xinqiang Wang ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa
Keyword(s):  
Hole Mobility ◽  
P Type ◽  
Mg Doped

scholarly journals Improvement of p-Type AlGaN Conductivity with an Alternating Mg-Doped/Un-Doped AlGaN Layer Structure

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 835
Author(s):  
Chi-Chung Chen ◽  
Yu-Ren Lin ◽  
Yu-Wei Lin ◽  
Yu-Cheng Su ◽  
Chung-Chi Chen ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Layer Structure ◽  
Reference Sample ◽  
Impurity Scattering ◽  
Hole Mobility ◽  
Al Content ◽  
Ionized Impurity Scattering ◽  
Layer Structures ◽  
P Type ◽  
Mg Doped

Using molecular beam epitaxy, we prepared seven p-type AlGaN samples of ~25% in Al content, including six samples with Mg-doped/un-doped AlGaN alternating-layer structures of different layer-thickness combinations, for comparing their p-type performances. Lower sheet resistance and higher effective hole mobility are obtained in a layer-structured sample, when compared with the reference sample of uniform Mg doping. The improved p-type performance in a layer-structured sample is attributed to the diffusion of holes generated in an Mg-doped layer into the neighboring un-doped layers, in which hole mobility is significantly higher because of weak ionized impurity scattering. Among the layer-structured samples, that of 6/4 nm in Mg-doped/un-doped thickness results in the lowest sheet resistance (the highest effective hole mobility), which is 4.83 times lower (4.57 times higher) when compared with the sample of uniform doping. The effects of the Mg-doped/un-doped layer structure on p-type performance in AlGaN and GaN are compared.

P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE

2004 ◽  
Vol 831 ◽  
Author(s):  
A. Usikov ◽  
O. Kovalenkov ◽  
V. Ivantsov ◽  
V. Sukhoveev ◽  
V. Dmitriev ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Hole Mobility ◽  
Hydride Vapor Phase Epitaxy ◽  
Electrically Conducting ◽  
Sapphire Substrates ◽  
High Hole Concentration ◽  
P Type ◽  
Initial Results ◽  
Mg Doped ◽  
Effect Technique

ABSTRACTIn this paper we report p-GaN growth by hydride vapor phase epitaxy (HVPE) on sapphire substrates. Mg or Zn impurities were used for doping. Layer thickness ranged from 2 to 5 microns. For both impurities, as-grown GaN layers had p-type conductivity. Concentration NA-ND was varied from 1016 to 1018 cm−3. An annealing procedure at 750°C in argon ambient typically increased the concentration NA-ND in 1.5–3.5 times. For Mg doped GaN layers, room temperature hole mobility of 80 cm2V−1s−1 was measured by conventional Van Der Pau Hall effect technique for material having hole concentration of about 1x1018 cm−3. Initial results on highly electrically conducting p-type AlGaN/GaN heterostructures doped with Zn are also reported.

Highly p-Type a-GaN Grown on r-Plane Sapphire Substrate

2005 ◽  
Vol 892 ◽  
Author(s):  
Yosuke Tsuchiya ◽  
Yoshizane Okadome ◽  
Hiroko Furukawa ◽  
Akira Honshio ◽  
Yasuto Miyake ◽  
...  
Keyword(s):  
Gas Flow ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Hall Effect Measurement ◽  
Type A ◽  
Temperature Dependent ◽  
Type C ◽  
Activation Ratio ◽  
P Type ◽  
Mg Doped

AbstractMg-doped p-type a-plane GaN films were grown on unintentionally doped a-plane GaN templates by metalorganic vapor phase epitaxy (MOVPE). The Mg concentration in a-plane GaN increased with increasing Mg source gas flow rate. A maximum hole concentration of 2.0 × 1018 cm-3 with a hole mobility of 4.5 cm2/Vs and resistivity of 0.7 Ω·cm were achieved. The activation ratio was 5.0 × 10-2. It was found that a maximum hole concentration in p-type a-plane GaN was higher than that in p-type c-plane GaN. The activation energy of Mg acceptors in p-type a-plane GaN with the maximum hole concentration was found to be 118 meV by temperature-dependent Hall-effect measurement.

scholarly journals First-Principles Study of a MoS2-PbS van der Waals Heterostructure Inspired by Naturally Occurring Merelaniite

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1649
Author(s):  
Gemechis D. Degaga ◽  
Sumandeep Kaur ◽  
Ravindra Pandey ◽  
John A. Jaszczak
Keyword(s):  
Density Functional ◽  
Van Der Waals ◽  
Hole Mobility ◽  
Functional Theory ◽  
Mos2 Monolayer ◽  
Naturally Occurring ◽  
Weak Interlayer ◽  
Bulk Structure ◽  
P Type ◽  
Interlayer Bonding

Vertically stacked, layered van der Waals (vdW) heterostructures offer the possibility to design materials, within a range of chemistries and structures, to possess tailored properties. Inspired by the naturally occurring mineral merelaniite, this paper studies a vdW heterostructure composed of a MoS2 monolayer and a PbS bilayer, using density functional theory. A commensurate 2D heterostructure film and the corresponding 3D periodic bulk structure are compared. The results find such a heterostructure to be stable and possess p-type semiconducting characteristics. Due to the heterostructure’s weak interlayer bonding, its carrier mobility is essentially governed by the constituent layers; the hole mobility is governed by the PbS bilayer, whereas the electron mobility is governed by the MoS2 monolayer. Furthermore, we estimate the hole mobility to be relatively high (~106 cm2V−1s−1), which can be useful for ultra-fast devices at the nanoscale.

Electronic transport in p-type Mg-doped GaAs nanowires

2016 ◽  
Vol 253 (10) ◽  
pp. 1960-1964 ◽  
Author(s):  
N. Cifuentes ◽  
H. Limborço ◽  
E. R. Viana ◽  
D. B. Roa ◽  
A. Abelenda ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Gaas Nanowires ◽  
P Type ◽  
Mg Doped

scholarly journals Progress on the Synthesis and Application of CuSCN Inorganic Hole Transport Material in Perovskite Solar Cells

Materials ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 2592 ◽  
Author(s):  
Funeka Matebese ◽  
Raymond Taziwa ◽  
Dorcas Mutukwa
Keyword(s):  
Solar Cells ◽  
Energy Levels ◽  
Perovskite Solar Cells ◽  
Hole Mobility ◽  
Cost Effective ◽  
Vital Role ◽  
Hole Transport ◽  
Recombination Processes ◽  
Short Synthesis ◽  
P Type

P-type wide bandgap semiconductor materials such as CuI, NiO, Cu2O and CuSCN are currently undergoing intense research as viable alternative hole transport materials (HTMs) to the spiro-OMeTAD in perovskite solar cells (PSCs). Despite 23.3% efficiency of PSCs, there are still a number of issues in addition to the toxicology of Pb such as instability and high-cost of the current HTM that needs to be urgently addressed. To that end, copper thiocyanate (CuSCN) HTMs in addition to robustness have high stability, high hole mobility, and suitable energy levels as compared to spiro-OMeTAD HTM. CuSCN HTM layer use affordable materials, require short synthesis routes, require simple synthetic techniques such as spin-coating and doctor-blading, thus offer a viable way of developing cost-effective PSCs. HTMs play a vital role in PSCs as they can enhance the performance of a device by reducing charge recombination processes. In this review paper, we report on the current progress of CuSCN HTMs that have been reported to date in PSCs. CuSCN HTMs have shown enhanced stability when exposed to weather elements as the solar devices retained their initial efficiency by a greater percentage. The efficiency reported to date is greater than 20% and has a potential of increasing, as well as maintaining thermal stability.

scholarly journals Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5339
Author(s):  
Lian Zhang ◽  
Rong Wang ◽  
Zhe Liu ◽  
Zhe Cheng ◽  
Xiaodong Tong ◽  
...  
Keyword(s):  
First Principles ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Nitrogen Vacancy ◽  
First Principle ◽  
Mg Doping ◽  
Limiting Condition ◽  
P Type

This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 × 1017/cm3 and 3 × 1019/cm3 with adjustable hole mobility from 3 to 16 cm2/V.s. These p-InGaN layers can meet different requirements of devices for hole concentration and mobility. First-principles defect calculations indicate that the p-type doping of InGaN at the N-rich limiting condition mainly originated from Mg substituting In (MgIn). In contrast with the compensation of nitrogen vacancy in p-type InGaN grown in a Ga-rich environment, the holes in p-type InGaN grown in an N-rich environment were mainly compensated by interstitial Mg (Mgi), which has very low formation energy.

Structural, electrical and optical properties of Mg-doped CuAlO2 films by pulsed laser deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (78) ◽  
pp. 41294-41300 ◽  
Author(s):  
Y. S. Zou ◽  
H. P. Wang ◽  
S. L. Zhang ◽  
D. Lou ◽  
Y. H. Dong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Band Gaps ◽  
Laser Deposition ◽  
Electrical And Optical Properties ◽  
Optical Band Gaps ◽  
P Type ◽  
Enhanced Conductivity ◽  
Mg Doped

P-type Mg doped CuAlO2 films with high crystallinity are prepared by pulsed laser deposition followed by annealing, and exhibit enhanced conductivity and tunable optical band gaps.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

2015 ◽  
Vol 106 (22) ◽  
pp. 222103 ◽  
Author(s):  
Erin C. H. Kyle ◽  
Stephen W. Kaun ◽  
Erin C. Young ◽  
James S. Speck
Keyword(s):  
Type Conductivity ◽  
P Type ◽  
Mg Doped
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