Structural, electrical and optical properties of Mg-doped CuAlO2 films by pulsed laser deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (78) ◽  
pp. 41294-41300 ◽  
Author(s):  
Y. S. Zou ◽  
H. P. Wang ◽  
S. L. Zhang ◽  
D. Lou ◽  
Y. H. Dong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Band Gaps ◽  
Laser Deposition ◽  
Electrical And Optical Properties ◽  
Optical Band Gaps ◽  
P Type ◽  
Enhanced Conductivity ◽  
Mg Doped

P-type Mg doped CuAlO2 films with high crystallinity are prepared by pulsed laser deposition followed by annealing, and exhibit enhanced conductivity and tunable optical band gaps.

Effect of thickness on structural, electrical, and optical properties of ZnO: Al films deposited by pulsed laser deposition

2007 ◽  
Vol 101 (3) ◽  
pp. 033713 ◽  
Author(s):  
Bin-Zhong Dong ◽  
Guo-Jia Fang ◽  
Jian-Feng Wang ◽  
Wen-Jie Guan ◽  
Xing-Zhong Zhao
Keyword(s):  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electrical And Optical Properties

Effects of Substrate Temperature on the Electrical and the Optical Properties of N-Type ZnO/P-Type 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 1327-1330
Author(s):  
Ji Chul Jung ◽  
Ji Hong Kim ◽  
Kang Min Do ◽  
Byung Moo Moon ◽  
Sung Jae Joo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Line Method ◽  
Different Temperatures ◽  
Junction Diode ◽  
P Type

We investigated the effect of the substrate temperature on the electrical and the optical properties of ZnO/4H-SiC structures. The n-type ZnO layer was grown on p-type 4H-SiC substrate by pulsed laser deposition to form p-n hetero-junction diode structure. The n-type ZnO thin films were deposited by pulsed laser deposition at different temperatures of 200, 400, and 600 °C, respectively. It was shown from transmission line method (TLM) and auger electron spectroscopy (AES) data that the sheet resistance of ZnO on SiC was increases from ~760 Ω/square to ~4000 Ω/square as the deposition temperature increases and the oxygen outdiffusion decreases. The I-V characteristics with and without illumination has also been studied.

Influence of the conditions of pulsed laser deposition on the structural, electrical, and optical properties of VO2 thin films

2015 ◽  
Vol 49 (5) ◽  
pp. 563-569 ◽  
Author(s):  
O. A. Novodvorsky ◽  
L. S. Parshina ◽  
O. D. Khramova ◽  
V. A. Mikhalevsky ◽  
K. D. Shcherbachev ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electrical And Optical Properties ◽  
Vo2 Thin Films

Electrical and optical properties of thin ZnO shell layers on GaP nanorods grown by pulsed laser deposition

2021 ◽  
Vol 725 ◽  
pp. 138634
Author(s):  
Jaroslav Bruncko ◽  
Jaroslav Kovac ◽  
Miroslav Michalka ◽  
Marie Netrvalova ◽  
Jaroslav Kovac ◽  
...  
Keyword(s):  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electrical And Optical Properties
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