Electronic transport in p-type Mg-doped GaAs nanowires

2016 ◽  
Vol 253 (10) ◽  
pp. 1960-1964 ◽  
Author(s):  
N. Cifuentes ◽  
H. Limborço ◽  
E. R. Viana ◽  
D. B. Roa ◽  
A. Abelenda ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Gaas Nanowires ◽  
P Type ◽  
Mg Doped

Electronic transport in p-type doped GaAs nanowires

2016 ◽  
Author(s):  
N. Cifuentes ◽  
H. Limborco ◽  
M. V. B. Moreira ◽  
G. M. Ribeiro ◽  
A. G. de Oliveira ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Gaas Nanowires ◽  
P Type

scholarly journals Electrical Properties of Polytypic Mg Doped GaAs Nanowires

2016 ◽  
Vol 2016 ◽  
pp. 1-5 ◽  
Author(s):  
N. Cifuentes ◽  
E. R. Viana ◽  
H. Limborço ◽  
D. B. Roa ◽  
A. Abelenda ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Field Effect Transistors ◽  
Variable Range Hopping ◽  
Transport Parameters ◽  
Electrical Transport Properties ◽  
Variable Range ◽  
Gaas Nanowires ◽  
P Type ◽  
Mg Doped ◽  
Variable Range Hopping Conduction

The electrical transport properties of individual Mg doped GaAs nanowires are investigated. It is shown that Mg can be successfully used as a nontoxic p-type dopant in GaAs nanowires. The doping levels, expanding over two orders of magnitude, and free holes mobility in the NW were obtained by the analysis of field effect transistors transfer curves. The temperature dependence of the electrical resistivity above room temperature shows that the polytypic structure of the NWs strongly modifies the NWs charge transport parameters, like the resistivity activation energy and holes mobility. At lower temperatures the NWs exhibit variable range hopping conduction. Both Mott and Efros-Shklovskii variable range hopping mechanisms were clearly identified in the nanowires.

Electronic Transport Properties of Hot-Pressed B6Si

1987 ◽  
Vol 97 ◽  
Author(s):  
C. Wood ◽  
D. Emin ◽  
R. S. Feigelson ◽  
I. D. R. Mackinnon
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Electronic Transport ◽  
Hall Mobility ◽  
Anomalous Behavior ◽  
Nominal Composition ◽  
Electronic Transport Properties ◽  
Increasing Temperature ◽  
P Type

ABSTRACTMeasurements of the electrical conductivity, Seebeck coefficient and Hall mobility from -300 K to -1300 K have been carried out on multiphase hotpressed samples of the nominal composition B6Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior.

Structural, electrical and optical properties of Mg-doped CuAlO2 films by pulsed laser deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (78) ◽  
pp. 41294-41300 ◽  
Author(s):  
Y. S. Zou ◽  
H. P. Wang ◽  
S. L. Zhang ◽  
D. Lou ◽  
Y. H. Dong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Band Gaps ◽  
Laser Deposition ◽  
Electrical And Optical Properties ◽  
Optical Band Gaps ◽  
P Type ◽  
Enhanced Conductivity ◽  
Mg Doped

P-type Mg doped CuAlO2 films with high crystallinity are prepared by pulsed laser deposition followed by annealing, and exhibit enhanced conductivity and tunable optical band gaps.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

2015 ◽  
Vol 106 (22) ◽  
pp. 222103 ◽  
Author(s):  
Erin C. H. Kyle ◽  
Stephen W. Kaun ◽  
Erin C. Young ◽  
James S. Speck
Keyword(s):  
Type Conductivity ◽  
P Type ◽  
Mg Doped

Enhancing P-type Conductivity in Mg-doped GaN Using Oxygen and Nitrogen Plasma Activation

2005 ◽  
Vol 44 (4A) ◽  
pp. 1726-1729 ◽  
Author(s):  
Jun-Dar Hwang ◽  
Zhca-Yong Lai ◽  
Ching-Yuan Wu ◽  
Shoou-Jinn Chang
Keyword(s):  
Nitrogen Plasma ◽  
Type Conductivity ◽  
Plasma Activation ◽  
P Type ◽  
Mg Doped

Investigation of Vacancies in GaN by Positron Annihilation

1996 ◽  
Vol 449 ◽  
Author(s):  
L. V. JØrgensen ◽  
A. C. Kruseman ◽  
H. Schut ◽  
A. Van Veen ◽  
M. Fanciulli ◽  
...  
Keyword(s):  
Positron Beam ◽  
High Resistivity ◽  
S Parameter ◽  
Yield Information ◽  
Beam Analysis ◽  
Core Electrons ◽  
P Type ◽  
Coincidence Measurements ◽  
Higher Sensitivity ◽  
Mg Doped

ABSTRACTPositron beam analysis has been performed on autodoped n-type, semi-insulating and Mg doped p-type epitaxially grown layers of GaN on sapphire. Doppler Broadening measurements clearly indicate the presence of vacancies in the intrinsically autodoped n-type GaN by an increase in the annihilation Doppler lineshape S-parameter of 1.04 relative to the value for the high resistivity sample. This value is typical for vacancy-type defects in compound semiconductors such as GaAs. Results of experiments with higher sensitivity to core-electrons are also presented. These two detector coincidence measurements yield information on the chemical environment surrounding the vacancies. The results are consistent with the presence of Ga vacancies in the autodoped n-type sample.

scholarly journals Optimization of Ohmic Contacts to p-GaAs Nanowires

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Marcelo Rizzo Piton ◽  
Teemu Hakkarainen ◽  
Joonas Hilska ◽  
Eero Koivusalo ◽  
Donald Lupo ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Grazing Incidence ◽  
Degree Of Crystallinity ◽  
X Ray Diffraction ◽  
Gaas Nanowires ◽  
Current Voltage ◽  
Metal Evaporation ◽  
Gaas Nanowire ◽  
P Type

AbstractThe performance of Ohmic contacts applied to semiconductor nanowires (NWs) is an important aspect for enabling their use in electronic or optoelectronic devices. Due to the small dimensions and specific surface orientation of NWs, the standard processing technology widely developed for planar heterostructures cannot be directly applied. Here, we report on the fabrication and optimization of Pt/Ti/Pt/Au Ohmic contacts for p-type GaAs nanowires grown by molecular beam epitaxy. The devices were characterized by current–voltage (IV) measurements. The linearity of the IV characteristics curves of individual nanowires was optimized by adjusting the layout of the contact metal layers, the surface treatment prior to metal evaporation, and post-processing thermal annealing. Our results reveal that the contact resistance is remarkably decreased when a Pt layer is deposited on the GaAs nanowire prior to the traditional Ti/Pt/Au multilayer layout used for p-type planar GaAs. These findings are explained by an improved quality of the metal-GaAs interface, which was evidenced by grazing incidence X-ray diffraction measurements in similar metallic thin films deposited on GaAs (110) substrates. In particular, we show that Ti exhibits low degree of crystallinity when deposited on GaAs (110) surface which directly affects the contact resistance of the NW devices. The deposition of a thin Pt layer on the NWs prior to Ti/Pt/Au results in a 95% decrease in the total electrical resistance of Be-doped GaAs NWs which is associated to the higher degree of crystallinity of Pt than Ti when deposited directly on GaAs (110).

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO

2020 ◽  
Vol 13 (6) ◽  
pp. 061007 ◽  
Author(s):  
Kazuki Ohnishi ◽  
Yuki Amano ◽  
Naoki Fujimoto ◽  
Shugo Nitta ◽  
Yoshio Honda ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
P Type ◽  
Mg Doped

Ionic and p-type electronic transport in zircon-type Ce1 − xAxVO4 ± δ(A = Ca, Sr)

2002 ◽  
Vol 12 (12) ◽  
pp. 3738-3745 ◽  
Author(s):  
Ekaterina V. Tsipis ◽  
Mikhail V. Patrakeev ◽  
Vladislav V. Kharton ◽  
Nikolai P. Vyshatko ◽  
Jorge R. Frade
Keyword(s):  
Electronic Transport ◽  
P Type ◽  
Zircon Type
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