Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al2O3 gate dielectric on GaAs substrate

2008 ◽  
Vol 103 (7) ◽  
pp. 074102 ◽  
Author(s):  
Chao-Ching Cheng ◽  
Chao-Hsin Chien ◽  
Guang-Li Luo ◽  
Chun-Hui Yang ◽  
Ching-Chih Chang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Gaas Substrate ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Al2o3 Gate Dielectric

Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate

2006 ◽  
Vol 99 (7) ◽  
pp. 074109 ◽  
Author(s):  
Min Xu ◽  
Cong-Hui Xu ◽  
Shi-Jin Ding ◽  
Hong-Liang Lu ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Si Substrate ◽  
Layer Deposition ◽  
Al2o3 Gate Dielectric

scholarly journals Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

Materials ◽  
2019 ◽  
Vol 12 (5) ◽  
pp. 689 ◽  
Author(s):  
Michitaka Yoshino ◽  
Yuto Ando ◽  
Manato Deki ◽  
Toru Toyabe ◽  
Kazuo Kuriyama ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Drain Current ◽  
Atomic Layer ◽  
Surface Concentration ◽  
Interface State ◽  
State Density ◽  
Free Standing ◽  
Al2o3 Gate Dielectric ◽  
P Type ◽  
Ion Implanted

A normally-off GaN double-implanted vertical MOSFET (DMOSFET) with an atomic layer deposition (ALD)-Al2O3 gate dielectric film on a free-standing GaN substrate fabricated by triple ion implantation is presented. The DMOSFET was formed with Si ion implanted source regions in a Mg ion implanted p-type base with N ion implanted termination regions. A maximum drain current of 115 mA/mm, maximum transconductance of 19 mS/mm at a drain voltage of 15 V, and a threshold voltage of 3.6 V were obtained for the fabricated DMOSFET with a gate length of 0.4 μm with an estimated p-type base Mg surface concentration of 5 × 1018 cm−3. The difference between calculated and measured Vths could be due to the activation ratio of ion-implanted Mg as well as Fermi level pinning and the interface state density. On-resistance of 9.3 mΩ·cm2 estimated from the linear region was also attained. Blocking voltage at off-state was 213 V. The fully ion implanted GaN DMOSFET is a promising candidate for future high-voltage and high-power applications.

Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

2007 ◽  
Vol 515 (5) ◽  
pp. 3132-3137 ◽  
Author(s):  
Jae Bon Koo ◽  
Jung Wook Lim ◽  
Seong Hyun Kim ◽  
Sun Jin Yun ◽  
Chan Hoe Ku ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Al2o3 Gate Dielectric

Interface and Electrical Properties of Atomic-layer-deposited HfAlO Gate Dielectric for N-channel GaAs MOSFETs

2009 ◽  
Vol 1155 ◽  
Author(s):  
Rahul Suri ◽  
Daniel J Lichtenwalner ◽  
Veena Misra
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Gate Leakage Current ◽  
X Ray ◽  
Layer Deposition ◽  
Post Deposition ◽  
Gallium Oxides

AbstractThe interface and electrical properties of HfAlO dielectric formed by atomic layer deposition (ALD) on sulfur-passivated GaAs were investigated. X-ray photoelectron spectroscopy (XPS) revealed the absence of arsenic oxides at the HfAlO/GaAs interface after dielectric growth and post-deposition annealing at 500 °C. A minimal increase in the amount of gallium oxides at the interface was detected between the as-deposited and annealed conditions highlighting the effectiveness of HfAlO in suppressing gallium oxide formation. An equivalent oxide thickness (EOT) of ∼ 2 nm has been achieved with a gate leakage current density of less than 10-4 A/cm2. These results testify a good dielectric interface with minimal interfacial oxides and open up potential for further investigation of HfAlO/GaAs gate stack properties to determine its viability for n-channel MOSFETs.

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

2009 ◽  
Vol 95 (15) ◽  
pp. 152113 ◽  
Author(s):  
Daniel J. Lichtenwalner ◽  
Veena Misra ◽  
Sarit Dhar ◽  
Sei-Hyung Ryu ◽  
Anant Agarwal
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Atomic Layer ◽  
Lateral Field ◽  
Enhancement Mode ◽  
Al2o3 Gate Dielectric
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