Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate

2006 ◽  
Vol 99 (7) ◽  
pp. 074109 ◽  
Author(s):  
Min Xu ◽  
Cong-Hui Xu ◽  
Shi-Jin Ding ◽  
Hong-Liang Lu ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Si Substrate ◽  
Layer Deposition ◽  
Al2o3 Gate Dielectric

Physical and Electrical Properties of Al2O3, HfO2, and their Alloy Films Prepared by Atomic Layer Deposition for 65nm CMOS Gate Dielectric

2002 ◽  
Vol 745 ◽  
Author(s):  
Takaaki Kawahara ◽  
Kazuyoshi Torii ◽  
Seiichi Fukuda ◽  
Takeshi Maeda ◽  
Atsushi Horiuchi ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Phase Separation ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Crystallization Temperature ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Dielectric Constants ◽  
Alloy Films ◽  
Layer Deposition

ABSTRACTWe have investigated physical and electrical properties of Al2O3, HfO2, and their alloy films deposited on 300mm Si wafers by Atomic Layer Deposition (ALD). It is found that Al2O3 films are not crystallized even after the heat treatment of 1050°C, while HfO2 films are already crystallized even after a-Si deposition (530°C). The crystallization temperature can be higher by adding Al2O3 to HfO2. It is confirmed by in-plane XRD and plane views of TEM that HfAlOx films with lower Hf content (Hf/(Hf+Al) <30%) are amorphous without phase separation after annealing at 1050°C and 5sec. The dependences of equivalent oxide thicknesses (EOT) on the physical thicknesses of Al2O3, HfAlOx (Hf/(Hf+Al)∼22%), and HfO2 films in poly-silicon gate capacitors indicate that those dielectric constants k are ∼9, 14, and 23, respectively. The gate dielectric with EOT of 1.5nm and the leakage current density Jg of 3mA/cm2 can be fabricated with 2nm-thick HfAlOx (22%) film.

Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC

2007 ◽  
Vol 91 (20) ◽  
pp. 203510 ◽  
Author(s):  
Carey M. Tanner ◽  
Ya-Chuan Perng ◽  
Christopher Frewin ◽  
Stephen E. Saddow ◽  
Jane P. Chang
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Dielectric Films ◽  
Layer Deposition ◽  
Al2o3 Gate Dielectric

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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